STM images of the ZnTe(110) surface, taken at different resolutions and sample rotation, together with its atomic model.[3]
ZnTe has the appearance of grey or brownish-red powder, or ruby-red crystals when refined by sublimation. Zinc telluride typically has a cubic (sphalerite, or "zincblende") crystal structure, but can be also prepared as rocksalt crystals or in hexagonal crystals (wurtzite structure). Irradiated by a strong optical beam burns in presence of oxygen. Its lattice constant is 0.6101 nm, allowing it to be grown with or on aluminium antimonide, gallium antimonide, indium arsenide, and lead selenide. With some lattice mismatch, it can also be grown on other substrates such as GaAs,[4] and it can be grown in thin-film polycrystalline (or nanocrystalline) form on substrates such as glass, for example, in the manufacture of thin-film solar cells. In the wurtzite (hexagonal) crystal structure, it has lattice parameters a = 0.427 and c = 0.699 nm.[5]
The material can also be used as a component of ternary semiconductor compounds, such as CdxZn(1-x)Te (conceptually a mixture composed from the end-members ZnTe and CdTe), which can be made with a varying composition x to allow the optical bandgap to be tuned as desired.
Nonlinear opticsedit
Zinc telluride together with lithium niobate is often used for generation of pulsed terahertz radiation in time-domain terahertz spectroscopy and terahertz imaging. When a crystal of such material is subjected to a high-intensity light pulse of subpicosecond duration, it emits a pulse of terahertz frequency through a nonlinear optical process called optical rectification.[7] Conversely, subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence and change the polarization of a transmitting light, making it an electro-optic detector.
Vanadium-doped zinc telluride, "ZnTe:V", is a non-linear optical photorefractive material of possible use in the protection of sensors at visible wavelengths. ZnTe:V optical limiters are light and compact, without complicated optics of conventional limiters. ZnTe:V can block a high-intensity jamming beam from a laser dazzler, while still passing the lower-intensity image of the observed scene. It can also be used in holographicinterferometry, in reconfigurable optical interconnections, and in laser optical phase conjugation devices. It offers superior photorefractive performance at wavelengths between 600 and 1300 nm, in comparison with other III-V and II-VI compound semiconductors. By adding manganese as an additional dopant (ZnTe:V:Mn), its photorefractive yield can be significantly increased.
^Kanazawa, K.; Yoshida, S.; Shigekawa, H.; Kuroda, S. (2015). "Dynamic probe of ZnTe(110) surface by scanning tunneling microscopy". Science and Technology of Advanced Materials (free access). 16 (1): 015002. Bibcode:2015STAdM..16a5002K. doi:10.1088/1468-6996/16/1/015002. PMC5036505. PMID 27877752.
^O'Dell, Dakota (2010). MBE Growth and Characterization of ZnTe and Nitrogen-doped ZnTe on GaAs(100) Substrates, Department of Physics, University of Notre Dame.
^Amin, N.; Sopian, K.; Konagai, M. (2007). "Numerical modeling of CdS/Cd Te and CdS/Cd Te/Zn Te solar cells as a function of Cd Te thickness". Solar Energy Materials and Solar Cells. 91 (13): 1202. doi:10.1016/j.solmat.2007.04.006.
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zinc, telluride, binary, chemical, compound, with, formula, znte, this, solid, semiconductor, material, with, direct, band, usually, type, semiconductor, crystal, structure, cubic, like, that, sphalerite, diamond, identifierscas, number, 1315, model, jsmol, in. Zinc telluride is a binary chemical compound with the formula ZnTe This solid is a semiconductor material with a direct band gap of 2 26 eV 2 It is usually a p type semiconductor Its crystal structure is cubic like that for sphalerite and diamond 1 Zinc telluride IdentifiersCAS Number 1315 11 3 Y3D model JSmol Interactive imageECHA InfoCard 100 013 874PubChem CID 3362486UNII IR8EB6G3VQ YCompTox Dashboard EPA DTXSID0061664SMILES TeH 2 12 ZnH2 2 TeH 2 3 ZnH2 2 TeH 2 ZnH 2 14 ZnH 2 1 Te 2 5 ZnH 2 38 Zn 2 26 TeH 2 2 ZnH 2 Te 2 4 TeH 2 1 ZnH2 2 TeH 2 3 ZnH 2 2 Te 2 ZnH 2 TeH 2 6 ZnH 2 TeH 2 TeH 2 68 TeH 2 ZnH2 2 6 ZnH 2 35PropertiesChemical formula ZnTeMolar mass 192 99 g mol 1 Appearance red crystalsDensity 6 34 g cm3 1 Melting point 1 295 C 2 363 F 1 568 K 1 Band gap 2 26 eV 2 Electron mobility 340 cm2 V s 2 Thermal conductivity 108 mW cm K 1 Refractive index nD 3 56 2 StructureCrystal structure Zincblende cubic Space group F4 3m 1 Lattice constant a 610 1 pm 1 Coordination geometry Tetrahedral Zn2 Tetrahedral Te2 1 ThermochemistryHeat capacity C 264 J kg K 1 Related compoundsOther anions Zinc oxideZinc sulfideZinc selenideOther cations Cadmium tellurideMercury tellurideRelated compounds Cadmium zinc tellurideExcept where otherwise noted data are given for materials in their standard state at 25 C 77 F 100 kPa Y verify what is Y N Infobox references Contents 1 Properties 2 Applications 2 1 Optoelectronics 2 2 Nonlinear optics 3 References 4 External linksProperties edit nbsp STM images of the ZnTe 110 surface taken at different resolutions and sample rotation together with its atomic model 3 ZnTe has the appearance of grey or brownish red powder or ruby red crystals when refined by sublimation Zinc telluride typically has a cubic sphalerite or zincblende crystal structure but can be also prepared as rocksalt crystals or in hexagonal crystals wurtzite structure Irradiated by a strong optical beam burns in presence of oxygen Its lattice constant is 0 6101 nm allowing it to be grown with or on aluminium antimonide gallium antimonide indium arsenide and lead selenide With some lattice mismatch it can also be grown on other substrates such as GaAs 4 and it can be grown in thin film polycrystalline or nanocrystalline form on substrates such as glass for example in the manufacture of thin film solar cells In the wurtzite hexagonal crystal structure it has lattice parameters a 0 427 and c 0 699 nm 5 Applications editOptoelectronics edit Zinc telluride can be easily doped and for this reason it is one of the more common semiconducting materials used in optoelectronics ZnTe is important for development of various semiconductor devices including blue LEDs laser diodes solar cells and components of microwave generators It can be used for solar cells for example as a back surface field layer and p type semiconductor material for a CdTe ZnTe structure 6 or in PIN diode structures The material can also be used as a component of ternary semiconductor compounds such as CdxZn 1 x Te conceptually a mixture composed from the end members ZnTe and CdTe which can be made with a varying composition x to allow the optical bandgap to be tuned as desired Nonlinear optics edit Zinc telluride together with lithium niobate is often used for generation of pulsed terahertz radiation in time domain terahertz spectroscopy and terahertz imaging When a crystal of such material is subjected to a high intensity light pulse of subpicosecond duration it emits a pulse of terahertz frequency through a nonlinear optical process called optical rectification 7 Conversely subjecting a zinc telluride crystal to terahertz radiation causes it to show optical birefringence and change the polarization of a transmitting light making it an electro optic detector Vanadium doped zinc telluride ZnTe V is a non linear optical photorefractive material of possible use in the protection of sensors at visible wavelengths ZnTe V optical limiters are light and compact without complicated optics of conventional limiters ZnTe V can block a high intensity jamming beam from a laser dazzler while still passing the lower intensity image of the observed scene It can also be used in holographic interferometry in reconfigurable optical interconnections and in laser optical phase conjugation devices It offers superior photorefractive performance at wavelengths between 600 and 1300 nm in comparison with other III V and II VI compound semiconductors By adding manganese as an additional dopant ZnTe V Mn its photorefractive yield can be significantly increased References edit a b c d e f g h i Haynes William M ed 2011 CRC Handbook of Chemistry and Physics 92nd ed Boca Raton FL CRC Press p 12 80 ISBN 1 4398 5511 0 a b c d Haynes William M ed 2011 CRC Handbook of Chemistry and Physics 92nd ed Boca Raton FL CRC Press p 12 85 ISBN 1 4398 5511 0 Kanazawa K Yoshida S Shigekawa H Kuroda S 2015 Dynamic probe of ZnTe 110 surface by scanning tunneling microscopy Science and Technology of Advanced Materials free access 16 1 015002 Bibcode 2015STAdM 16a5002K doi 10 1088 1468 6996 16 1 015002 PMC 5036505 PMID 27877752 O Dell Dakota 2010 MBE Growth and Characterization of ZnTe and Nitrogen doped ZnTe on GaAs 100 Substrates Department of Physics University of Notre Dame Kittel C 1976 Introduction to Solid State Physics 5th edition p 28 Amin N Sopian K Konagai M 2007 Numerical modeling of CdS Cd Te and CdS Cd Te Zn Te solar cells as a function of Cd Te thickness Solar Energy Materials and Solar Cells 91 13 1202 doi 10 1016 j solmat 2007 04 006 THz Generation and Detection in ZnTe chem yale eduExternal links edit nbsp Wikimedia Commons has media related to Zinc telluride National Compound Semiconductor Roadmap Office of Naval research Accessed April 2006 Retrieved from https en wikipedia org w index php title Zinc telluride amp oldid 1176619595, wikipedia, wiki, book, books, library,
