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Aluminium nitride

Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K)[5] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.

Aluminium nitride
Names
Other names
AlN
Identifiers
  • 24304-00-5 Y
3D model (JSmol)
  • Interactive image
  • Interactive image
ChEBI
  • CHEBI:50884 Y
ChemSpider
  • 81668 Y
ECHA InfoCard 100.041.931
EC Number
  • 246-140-8
13611
  • 90455
RTECS number
  • BD1055000
UNII
  • 7K47D7P3M0 Y
  • DTXSID8066977
  • InChI=1S/Al.N Y
    Key: PIGFYZPCRLYGLF-UHFFFAOYSA-N Y
  • InChI=1/Al.N/rAlN/c1-2
    Key: PIGFYZPCRLYGLF-PXKYIXAJAH
  • [AlH2-]1[N+]47[AlH-]2[N+][AlH-]3[N+]8([AlH2-][NH+]([AlH2-]4)[AlH2-]6)[AlH-]4[N+][AlH-]5[N+]6([AlH2-]6)[Al-]78[N+]78[AlH-]([NH+]69)[NH+]5[AlH2-][NH+]4[AlH-]7[NH+]3[AlH2-][NH+]2[AlH-]8[NH+]1[AlH2-]9
  • [AlH2-]1[NH+]([AlH2-]6)[AlH2-][NH+]7[AlH-]2[N+][Al-]3([N+][AlH-]9[N+]5)[N+]18[Al-]45[N+][AlH-]5[NH+]6[Al-]78[N+]78[AlH2-][NH+]5[AlH2-][N+]4([AlH2-][NH+]9[AlH2-]4)[AlH-]7[N+]34[AlH2-][NH+]2[AlH2-]8
Properties
AlN
Molar mass 40.989 g/mol[1]
Appearance white to pale-yellow solid
Density 3.255 g/cm3[1]
Melting point 2,500 °C (4,530 °F; 2,770 K)[6]
hydrolyses (powder), insoluble (monocrystalline)
Solubility insoluble, subject of hydrolysis in water solutions of bases and acids [2]
Band gap 6.015 eV[3][4] (direct)
Electron mobility ~300 cm2/(V·s)
Thermal conductivity 321 W/(m·K)[5]
Structure[7]
Wurtzite
C6v4-P63mc, No. 186, hP4
a = 0.31117 nm, c = 0.49788 nm
2
Tetrahedral
Thermochemistry[8]
30.1 J/(mol·K)
20.2 J/(mol·K)
−318.0 kJ/mol
−287.0 kJ/mol
Hazards
GHS labelling:
Warning
H315, H319, H335, H373, H411
P260, P261, P264, P271, P280, P301+P330+P331, P302+P352, P303+P361+P353, P304+P340, P305+P351+P338, P310, P312, P321, P332+P313, P337+P313, P362, P363, P403+P233, P405, P501
NFPA 704 (fire diamond)
Health 1: Exposure would cause irritation but only minor residual injury. E.g. turpentineFlammability 0: Will not burn. E.g. waterInstability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogenSpecial hazards (white): no code
1
0
0
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
Y verify (what is YN ?)

History and physical properties edit

AlN was first synthesized in 1862 by F. Briegleb and A. Geuther.[9][10]

AlN, in the pure (undoped) state has an electrical conductivity of 10−11–10−13 Ω−1⋅cm−1, rising to 10−5–10−6 Ω−1⋅cm−1 when doped.[11] Electrical breakdown occurs at a field of 1.2–1.8×105 V/mm (dielectric strength).[11]

The material exists primarily in the hexagonal wurtzite crystal structure, but also has a metastable cubic zincblende phase, which is synthesized primarily in the form of thin films. It is predicted that the cubic phase of AlN (zb-AlN) can exhibit superconductivity at high pressures.[12] In AlN wurtzite crystal structure, Al and N alternate along the c-axis, and each bond is tetrahedrally coordinated with four atoms per unit cell.

One of the unique intrinsic properties of wurtzite AlN is its spontaneous polarization. The origin of spontaneous polarization is the strong ionic character of chemical bonds in wurtzite AlN due to the large difference in electronegativity between aluminium and nitrogen atoms. Furthermore, the non-centrosymmetric wurtzite crystal structure gives rise to a net polarization along the c-axis. Compared with other III-nitride materials, AlN has a larger spontaneous polarization due to the higher nonideality of its crystal structure (Psp: AlN 0.081 C/m2 > InN 0.032 C/m2 > GaN 0.029 C/m2).[13] Moreover, the piezoelectric nature of AlN gives rise to internal piezoelectric polarization charges under strain. These polarization effects can be utilized to induce a high density of free carriers at III-nitride semiconductor heterostructure interfaces completely dispensing with the need of intentional doping. Owing to the broken inversion symmetry along the polar direction, AlN thin film can be grown on either metal-polar or nitrogen-polar faces. Their bulk and surface properties depend significantly on this choice. The polarization effect is currently under investigation for both polarities.

Critical spontaneous and piezoelectric polarization constants for AlN are listed in the table below:[13][14]

Critical spontaneous and piezoelectric polarization constants for AlN
e31

(C/m2)

e33

(C/m2)

c13

(GPa)

c33

(GPa)

a0

(Å)

c0

(Å)

AlN -0.60 1.46 108 373 3.112 4.982

AlN has high thermal conductivity, high-quality MOCVD-grown AlN single crystal has an intrinsic thermal conductivity of 321 W/(m·K), consistent with a first-principle calculation.[5] For an electrically insulating ceramic, it is 70–210 W/(m·K) for polycrystalline material, and as high as 285 W/(m·K) for single crystals).[11]

AlN is one of the few materials that have both a wide and direct bandgap (almost twice that of SiC and GaN) and large thermal conductivity.[15] This is due to its small atomic mass, strong interatomic bonds, and simple crystal structure.[16] This property makes AlN attractive for application in high speed and high power communication networks. Many devices handle and manipulate large amounts of energy in small volumes and at high speeds, so due to the electrically insulating nature and high thermal conductivity of AlN, it becomes a potential material for high-power power electronics. Among group III-nitride materials, AlN has higher thermal conductivity compared to gallium nitride (GaN). Therefore, AlN is more advantageous than GaN in terms of heat dissipation in many power and radio frequency electronic devices.

Thermal expansivity is another critical property for high temperature applications. The calculated thermal expansion coefficients of AlN at 300 K are 4.2×10−6 K−1along a-axis and 5.3×10−6 K−1 along c-axis.[17]

Stability and chemical properties edit

Aluminium nitride is stable at high temperatures in inert atmospheres and melts at about 2,200 °C (2,470 K; 3,990 °F). In a vacuum, AlN decomposes at ~1,800 °C (2,070 K; 3,270 °F). In the air, surface oxidation occurs above 700 °C (973 K; 1,292 °F), and even at room temperature, surface oxide layers of 5–10 nm thickness have been detected. This oxide layer protects the material up to 1,370 °C (1,640 K; 2,500 °F). Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon-dioxide atmospheres up to 980 °C (1,250 K; 1,800 °F).[18]

The material dissolves slowly in mineral acids through grain-boundary attack and in strong alkalies through attack on the aluminium-nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including chlorides and cryolite.[19]

Aluminium nitride can be patterned with a Cl2-based reactive ion etch.[20][21]

Manufacture edit

AlN is synthesized by the carbothermal reduction of aluminium oxide in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium.[22] The use of sintering aids, such as Y2O3 or CaO, and hot pressing is required to produce a dense technical-grade material.[citation needed]

Applications edit

Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. Recent advancements in material science have permitted the deposition of piezoelectric AlN films on polymeric substrates, thus enabling the development of flexible SAW devices.[23] One application is an RF filter, widely used in mobile phones,[24] which is called a thin-film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.[25]

AlN is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.[26][27]

Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.[28][29]

Currently there is much research into developing light-emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and, using the alloy aluminium gallium nitride, wavelengths as short as 250 nm have been achieved. In 2006, an inefficient AlN LED emission at 210 nm was reported.[30]

AlN-based high electron mobility transistors (HEMTs) have attracted a high level of attention due to AlN’s superior properties, such as better thermal management, reduced buffer leakage, and excellent integration for all nitride electronics. AlN buffer layer is a critical building block for AlN-based HEMTs, and it has been grown by using MOCVD or MBE on different substrates. Building on top of AlN buffer, n-channel devices with 2D electron gas (2DEG) and p-channel devices with 2D hole gas (2DHG) have been demonstrated. The combination of high-density 2DEG and 2DHG on the same semiconductor platform makes it a potential candidate for CMOS devices.

Among the applications of AlN are

  • opto-electronics,
  • dielectric layers in optical storage media,
  • electronic substrates, chip carriers where high thermal conductivity is essential,
  • military applications,
  • as a crucible to grow crystals of gallium arsenide,
  • steel and semiconductor manufacturing.

See also edit

References edit

  1. ^ a b Haynes, p. 4.45.
  2. ^ Fukumoto, S.; Hookabe, T.; Tsubakino, H. (2010). "Hydrolysis behavior of aluminum nitride in various solutions". J. Mat. Science. 35 (11): 2743–2748. doi:10.1023/A:1004718329003. S2CID 91552821.
  3. ^ Haynes, p. 12.85.
  4. ^ Feneberg, M.; Leute, R. A. R.; Neuschl, B.; Thonke, K.; Bickermann, M. (2010). Phys. Rev. B. 82 (7): 075208. Bibcode:2010PhRvB..82g5208F. doi:10.1103/physrevb.82.075208.{{cite journal}}: CS1 maint: untitled periodical (link)
  5. ^ a b c Cheng, Zhe; Koh, Yee Rui; Mamun, Abdullah; Shi, Jingjing; Bai, Tingyu; Huynh, Kenny; Yates, Luke; Liu, Zeyu; Li, Ruiyang; Lee, Eungkyu; Liao, Michael E.; Wang, Yekan; Yu, Hsuan Ming; Kushimoto, Maki; Luo, Tengfei; Goorsky, Mark S.; Hopkins, Patrick E.; Amano, Hiroshi; Khan, Asif; Graham, Samuel (2020). "Experimental observation of high intrinsic thermal conductivity of AlN". Physical Review Materials. 4 (4): 044602. arXiv:1911.01595. Bibcode:2020PhRvM...4d4602C. doi:10.1103/PhysRevMaterials.4.044602. S2CID 207780348. Retrieved 2020-04-03.
  6. ^ Haynes, p. 12.80.
  7. ^ Vandamme, Nobuko S.; Richard, Sarah M.; Winzer, Stephen R. (1989). "Liquid-Phase Sintering of Aluminum Nitride by Europium Oxide Additives". Journal of the American Ceramic Society. 72 (8): 1409–1414. doi:10.1111/j.1151-2916.1989.tb07662.x.
  8. ^ Haynes, p. 5.4.
  9. ^ Fesenko I. P.; Prokopiv M. M.; Chasnyk V. I.; et al. (2015). Aluminium nitride based functional materials, prepared from nano/micron-sized powders via hot pressing/pressureless sintering. EPC ALCON. p. 11. ISBN 978-966-8449-53-6.
  10. ^ Briegleb, F.; Geuther, A. (1862). "Ueber das Stickstoffmagnesium und die Affinitäten des Stickgases zu Metallen". Justus Liebigs Annalen der Chemie. 123 (2): 228–241. doi:10.1002/jlac.18621230212.
  11. ^ a b c "AlN – Aluminium Nitride". Ioffe Database. Sankt-Peterburg: FTI im. A. F. Ioffe, RAN. Retrieved 2014-01-01.
  12. ^ Dancy, G. Selva; Sheeba, V. Benaline; Louis, C. Nirmala; Amalraj, A. (2015-09-30). "Superconductivity in Group III-V Semiconductor AlN Under High Pressure". Orbital - the Electronic Journal of Chemistry. 7 (3). Instituto de Quimica - Univ. Federal do Mato Grosso do Sul. doi:10.17807/orbital.v7i3.628. ISSN 1984-6428.
  13. ^ a b Ambacher, O (1998-10-21). "Growth and applications of Group III-nitrides". Journal of Physics D: Applied Physics. 31 (20): 2653–2710. doi:10.1088/0022-3727/31/20/001. ISSN 0022-3727. S2CID 250782290.
  14. ^ Ambacher, O.; Foutz, B.; Smart, J.; Shealy, J. R.; Weimann, N. G.; Chu, K.; Murphy, M.; Sierakowski, A. J.; Schaff, W. J.; Eastman, L. F.; Dimitrov, R.; Mitchell, A.; Stutzmann, M. (2000-01-01). "Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures". Journal of Applied Physics. 87 (1): 334–344. Bibcode:2000JAP....87..334A. doi:10.1063/1.371866. ISSN 0021-8979.
  15. ^ Hickman, Austin Lee; Chaudhuri, Reet; Bader, Samuel James; Nomoto, Kazuki; Li, Lei; Hwang, James C M; Grace Xing, Huili; Jena, Debdeep (2021-04-01). "Next generation electronics on the ultrawide-bandgap aluminum nitride platform". Semiconductor Science and Technology. 36 (4): 044001. Bibcode:2021SeScT..36d4001H. doi:10.1088/1361-6641/abe5fd. ISSN 0268-1242. S2CID 233936255.
  16. ^ Xu, Runjie Lily; Muñoz Rojo, Miguel; Islam, S. M.; Sood, Aditya; Vareskic, Bozo; Katre, Ankita; Mingo, Natalio; Goodson, Kenneth E.; Xing, Huili Grace; Jena, Debdeep; Pop, Eric (2019-11-14). "Thermal conductivity of crystalline AlN and the influence of atomic-scale defects". Journal of Applied Physics. 126 (18): 185105. arXiv:1904.00345. Bibcode:2019JAP...126r5105X. doi:10.1063/1.5097172. ISSN 0021-8979. S2CID 90262793.
  17. ^ Slack, Glen A.; Bartram, S. F. (1975-01-01). "Thermal expansion of some diamondlike crystals". Journal of Applied Physics. 46 (1): 89–98. Bibcode:1975JAP....46...89S. doi:10.1063/1.321373. ISSN 0021-8979.
  18. ^ Berger, L. I. (1997). Semiconductor Materials. CRC Press. pp. 123–124. ISBN 978-0-8493-8912-2.
  19. ^ Pradhan, S; Jena, S K; Patnaik, S C; Swain, P K; Majhi, J (2015-02-19). "Wear characteristics of Al-AlN composites produced in-situ by nitrogenation". IOP Conference Series: Materials Science and Engineering. 75 (1): 012034. Bibcode:2015MS&E...75a2034P. doi:10.1088/1757-899X/75/1/012034. ISSN 1757-899X. S2CID 137160554.
  20. ^ Chih-ming Lin; Ting-ta Yen; Yun-ju Lai; Felmetsger, V. V.; Hopcroft, M. A.; Kuypers, J. H.; Pisano, A. P. (March 2010). "Temperature-compensated aluminum nitride lamb wave resonators". IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 57 (3): 524–532. doi:10.1109/TUFFC.2010.1443. PMID 20211766. S2CID 20028149.
  21. ^ Xiong, Chi; Pernice, Wolfram H. P.; Sun, Xiankai; Schuck, Carsten; Fong, King Y.; Tang, Hong X. (2012). "Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics". New Journal of Physics. 14 (9): 095014. arXiv:1210.0975. Bibcode:2012NJPh...14i5014X. doi:10.1088/1367-2630/14/9/095014. ISSN 1367-2630. S2CID 118571039.
  22. ^ Yamakawa, Tomohiro; Tatami, Junichi; Wakihara, Toru; Komeya, Katsutoshi; Meguro, Takeshi; MacKenzie, Kenneth J. D.; Takagi, Shinichi; Yokouchi, Masahiro (2005-10-04). "Synthesis of AlN Nanopowder from γ-Al2O3 by Reduction-Nitridation in a Mixture of NH3-C3H8". Journal of the American Ceramic Society. 89 (1): 171–175. doi:10.1111/j.1551-2916.2005.00693.x. ISSN 0002-7820. Retrieved 2023-06-26.
  23. ^ Lamanna, Leonardo (November 2023). "Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices: Materials, Processing, and Applications". Advanced Materials Technologies. 8 (21). doi:10.1002/admt.202300362. ISSN 2365-709X.
  24. ^ Tsuruoka, Doug (2014-03-17). "Apple, Samsung Cellphone Filter Orders Lift Avago". Investor's Business Daily.
  25. ^ "ACPF-7001: Agilent Technologies Announces FBAR Filter for U.S. PCS Band Mobile Phones and Data Cards". wirelessZONE. EN-Genius Network Ltd. 2002-05-27. Retrieved 2008-10-18.
  26. ^ "A Gestural Interface for Smart Watches".
  27. ^ Przybyla, R.; al, et (2014). "3D Ultrasonic Gesture Recognition". International Solid State Circuits Conference. San Francisco. pp. 210–211.
  28. ^ Ahmadi, A.; Hadipour, N. L.; Kamfiroozi, M.; Bagheri, Z. (2012). "Theoretical study of aluminium nitride nanotubes for chemical sensing of formaldehyde". Sensors and Actuators B: Chemical. 161 (1): 1025–1029. doi:10.1016/j.snb.2011.12.001.
  29. ^ Ahmadi Peyghan, A.; Omidvar, A.; Hadipour, N. L.; Bagheri, Z.; Kamfiroozi, M. (2012). "Can aluminum nitride nanotubes detect the toxic NH3 molecules?". Physica E. 44 (7–8): 1357–1360. Bibcode:2012PhyE...44.1357A. doi:10.1016/j.physe.2012.02.018.
  30. ^ Taniyasu, Y.; et al. (2006). "An Aluminium Nitride Light-Emitting Diode with a Wavelength of 210 Nanometres". Nature. 441 (7091): 325–328. Bibcode:2006Natur.441..325T. doi:10.1038/nature04760. PMID 16710416. S2CID 4373542.

Cited sources edit


aluminium, nitride, redirects, here, other, uses, disambiguation, confused, with, aluminium, nitrate, solid, nitride, aluminium, high, thermal, conductivity, electrical, insulator, wurtzite, phase, band, room, temperature, potential, application, optoelectroni. AlN redirects here For other uses see Aln disambiguation Not to be confused with Aluminium nitrate Aluminium nitride AlN is a solid nitride of aluminium It has a high thermal conductivity of up to 321 W m K 5 and is an electrical insulator Its wurtzite phase w AlN has a band gap of 6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies Aluminium nitride Names Other names AlN Identifiers CAS Number 24304 00 5 Y 3D model JSmol Interactive imageInteractive image ChEBI CHEBI 50884 Y ChemSpider 81668 Y ECHA InfoCard 100 041 931 EC Number 246 140 8 Gmelin Reference 13611 PubChem CID 90455 RTECS number BD1055000 UNII 7K47D7P3M0 Y CompTox Dashboard EPA DTXSID8066977 InChI InChI 1S Al N YKey PIGFYZPCRLYGLF UHFFFAOYSA N YInChI 1 Al N rAlN c1 2Key PIGFYZPCRLYGLF PXKYIXAJAH SMILES AlH2 1 N 47 AlH 2 N AlH 3 N 8 AlH2 NH AlH2 4 AlH2 6 AlH 4 N AlH 5 N 6 AlH2 6 Al 78 N 78 AlH NH 69 NH 5 AlH2 NH 4 AlH 7 NH 3 AlH2 NH 2 AlH 8 NH 1 AlH2 9 AlH2 1 NH AlH2 6 AlH2 NH 7 AlH 2 N Al 3 N AlH 9 N 5 N 18 Al 45 N AlH 5 NH 6 Al 78 N 78 AlH2 NH 5 AlH2 N 4 AlH2 NH 9 AlH2 4 AlH 7 N 34 AlH2 NH 2 AlH2 8 Properties Chemical formula Al N Molar mass 40 989 g mol 1 Appearance white to pale yellow solid Density 3 255 g cm3 1 Melting point 2 500 C 4 530 F 2 770 K 6 Solubility in water hydrolyses powder insoluble monocrystalline Solubility insoluble subject of hydrolysis in water solutions of bases and acids 2 Band gap 6 015 eV 3 4 direct Electron mobility 300 cm2 V s Thermal conductivity 321 W m K 5 Structure 7 Crystal structure Wurtzite Space group C6v4 P63mc No 186 hP4 Lattice constant a 0 31117 nm c 0 49788 nm Formula units Z 2 Coordination geometry Tetrahedral Thermochemistry 8 Heat capacity C 30 1 J mol K Std molarentropy S 298 20 2 J mol K Std enthalpy offormation DfH 298 318 0 kJ mol Gibbs free energy DfG 287 0 kJ mol Hazards GHS labelling Pictograms Signal word Warning Hazard statements H315 H319 H335 H373 H411 Precautionary statements P260 P261 P264 P271 P280 P301 P330 P331 P302 P352 P303 P361 P353 P304 P340 P305 P351 P338 P310 P312 P321 P332 P313 P337 P313 P362 P363 P403 P233 P405 P501 NFPA 704 fire diamond 100 Except where otherwise noted data are given for materials in their standard state at 25 C 77 F 100 kPa Y verify what is Y N Infobox references Contents 1 History and physical properties 2 Stability and chemical properties 3 Manufacture 4 Applications 5 See also 6 References 7 Cited sourcesHistory and physical properties editAlN was first synthesized in 1862 by F Briegleb and A Geuther 9 10 AlN in the pure undoped state has an electrical conductivity of 10 11 10 13 W 1 cm 1 rising to 10 5 10 6 W 1 cm 1 when doped 11 Electrical breakdown occurs at a field of 1 2 1 8 105 V mm dielectric strength 11 The material exists primarily in the hexagonal wurtzite crystal structure but also has a metastable cubic zincblende phase which is synthesized primarily in the form of thin films It is predicted that the cubic phase of AlN zb AlN can exhibit superconductivity at high pressures 12 In AlN wurtzite crystal structure Al and N alternate along the c axis and each bond is tetrahedrally coordinated with four atoms per unit cell One of the unique intrinsic properties of wurtzite AlN is its spontaneous polarization The origin of spontaneous polarization is the strong ionic character of chemical bonds in wurtzite AlN due to the large difference in electronegativity between aluminium and nitrogen atoms Furthermore the non centrosymmetric wurtzite crystal structure gives rise to a net polarization along the c axis Compared with other III nitride materials AlN has a larger spontaneous polarization due to the higher nonideality of its crystal structure Psp AlN 0 081 C m2 gt InN 0 032 C m2 gt GaN 0 029 C m2 13 Moreover the piezoelectric nature of AlN gives rise to internal piezoelectric polarization charges under strain These polarization effects can be utilized to induce a high density of free carriers at III nitride semiconductor heterostructure interfaces completely dispensing with the need of intentional doping Owing to the broken inversion symmetry along the polar direction AlN thin film can be grown on either metal polar or nitrogen polar faces Their bulk and surface properties depend significantly on this choice The polarization effect is currently under investigation for both polarities Critical spontaneous and piezoelectric polarization constants for AlN are listed in the table below 13 14 Critical spontaneous and piezoelectric polarization constants for AlN e31 C m2 e33 C m2 c13 GPa c33 GPa a0 A c0 A AlN 0 60 1 46 108 373 3 112 4 982 AlN has high thermal conductivity high quality MOCVD grown AlN single crystal has an intrinsic thermal conductivity of 321 W m K consistent with a first principle calculation 5 For an electrically insulating ceramic it is 70 210 W m K for polycrystalline material and as high as 285 W m K for single crystals 11 AlN is one of the few materials that have both a wide and direct bandgap almost twice that of SiC and GaN and large thermal conductivity 15 This is due to its small atomic mass strong interatomic bonds and simple crystal structure 16 This property makes AlN attractive for application in high speed and high power communication networks Many devices handle and manipulate large amounts of energy in small volumes and at high speeds so due to the electrically insulating nature and high thermal conductivity of AlN it becomes a potential material for high power power electronics Among group III nitride materials AlN has higher thermal conductivity compared to gallium nitride GaN Therefore AlN is more advantageous than GaN in terms of heat dissipation in many power and radio frequency electronic devices Thermal expansivity is another critical property for high temperature applications The calculated thermal expansion coefficients of AlN at 300 K are 4 2 10 6 K 1along a axis and 5 3 10 6 K 1 along c axis 17 Stability and chemical properties editAluminium nitride is stable at high temperatures in inert atmospheres and melts at about 2 200 C 2 470 K 3 990 F In a vacuum AlN decomposes at 1 800 C 2 070 K 3 270 F In the air surface oxidation occurs above 700 C 973 K 1 292 F and even at room temperature surface oxide layers of 5 10 nm thickness have been detected This oxide layer protects the material up to 1 370 C 1 640 K 2 500 F Above this temperature bulk oxidation occurs Aluminium nitride is stable in hydrogen and carbon dioxide atmospheres up to 980 C 1 250 K 1 800 F 18 The material dissolves slowly in mineral acids through grain boundary attack and in strong alkalies through attack on the aluminium nitride grains The material hydrolyzes slowly in water Aluminium nitride is resistant to attack from most molten salts including chlorides and cryolite 19 Aluminium nitride can be patterned with a Cl2 based reactive ion etch 20 21 Manufacture editAlN is synthesized by the carbothermal reduction of aluminium oxide in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium 22 The use of sintering aids such as Y2O3 or CaO and hot pressing is required to produce a dense technical grade material citation needed Applications editEpitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors SAWs deposited on silicon wafers because of AlN s piezoelectric properties Recent advancements in material science have permitted the deposition of piezoelectric AlN films on polymeric substrates thus enabling the development of flexible SAW devices 23 One application is an RF filter widely used in mobile phones 24 which is called a thin film bulk acoustic resonator FBAR This is a MEMS device that uses aluminium nitride sandwiched between two metal layers 25 AlN is also used to build piezoelectric micromachined ultrasound transducers which emit and receive ultrasound and which can be used for in air rangefinding over distances of up to a meter 26 27 Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and beryllium oxide AlN nanotubes as inorganic quasi one dimensional nanotubes which are isoelectronic with carbon nanotubes have been suggested as chemical sensors for toxic gases 28 29 Currently there is much research into developing light emitting diodes to operate in the ultraviolet using gallium nitride based semiconductors and using the alloy aluminium gallium nitride wavelengths as short as 250 nm have been achieved In 2006 an inefficient AlN LED emission at 210 nm was reported 30 AlN based high electron mobility transistors HEMTs have attracted a high level of attention due to AlN s superior properties such as better thermal management reduced buffer leakage and excellent integration for all nitride electronics AlN buffer layer is a critical building block for AlN based HEMTs and it has been grown by using MOCVD or MBE on different substrates Building on top of AlN buffer n channel devices with 2D electron gas 2DEG and p channel devices with 2D hole gas 2DHG have been demonstrated The combination of high density 2DEG and 2DHG on the same semiconductor platform makes it a potential candidate for CMOS devices Among the applications of AlN are opto electronics dielectric layers in optical storage media electronic substrates chip carriers where high thermal conductivity is essential military applications as a crucible to grow crystals of gallium arsenide steel and semiconductor manufacturing See also editBoron nitride Aluminium phosphide Aluminium arsenide Aluminium antimonide Gallium nitride Indium nitride Aluminium oxynitride Titanium aluminium nitride TiAlN or AlTiNReferences edit a b Haynes p 4 45 Fukumoto S Hookabe T Tsubakino H 2010 Hydrolysis behavior of aluminum nitride in various solutions J Mat Science 35 11 2743 2748 doi 10 1023 A 1004718329003 S2CID 91552821 Haynes p 12 85 Feneberg M Leute R A R Neuschl B Thonke K Bickermann M 2010 Phys Rev B 82 7 075208 Bibcode 2010PhRvB 82g5208F doi 10 1103 physrevb 82 075208 a href Template Cite journal html title Template Cite journal cite journal a CS1 maint untitled periodical link a b c Cheng Zhe Koh Yee Rui Mamun Abdullah Shi Jingjing Bai Tingyu Huynh Kenny Yates Luke Liu Zeyu Li Ruiyang Lee Eungkyu Liao Michael E Wang Yekan Yu Hsuan Ming Kushimoto Maki Luo Tengfei Goorsky Mark S Hopkins Patrick E Amano Hiroshi Khan Asif Graham Samuel 2020 Experimental observation of high intrinsic thermal conductivity of AlN Physical Review Materials 4 4 044602 arXiv 1911 01595 Bibcode 2020PhRvM 4d4602C doi 10 1103 PhysRevMaterials 4 044602 S2CID 207780348 Retrieved 2020 04 03 Haynes p 12 80 Vandamme Nobuko S Richard Sarah M Winzer Stephen R 1989 Liquid Phase Sintering of Aluminum Nitride by Europium Oxide Additives Journal of the American Ceramic Society 72 8 1409 1414 doi 10 1111 j 1151 2916 1989 tb07662 x Haynes p 5 4 Fesenko I P Prokopiv M M Chasnyk V I et al 2015 Aluminium nitride based functional materials prepared from nano micron sized powders via hot pressing pressureless sintering EPC ALCON p 11 ISBN 978 966 8449 53 6 Briegleb F Geuther A 1862 Ueber das Stickstoffmagnesium und die Affinitaten des Stickgases zu Metallen Justus Liebigs Annalen der Chemie 123 2 228 241 doi 10 1002 jlac 18621230212 a b c AlN Aluminium Nitride Ioffe Database Sankt Peterburg FTI im A F Ioffe RAN Retrieved 2014 01 01 Dancy G Selva Sheeba V Benaline Louis C Nirmala Amalraj A 2015 09 30 Superconductivity in Group III V Semiconductor AlN Under High Pressure Orbital the Electronic Journal of Chemistry 7 3 Instituto de Quimica Univ Federal do Mato Grosso do Sul doi 10 17807 orbital v7i3 628 ISSN 1984 6428 a b Ambacher O 1998 10 21 Growth and applications of Group III nitrides Journal of Physics D Applied Physics 31 20 2653 2710 doi 10 1088 0022 3727 31 20 001 ISSN 0022 3727 S2CID 250782290 Ambacher O Foutz B Smart J Shealy J R Weimann N G Chu K Murphy M Sierakowski A J Schaff W J Eastman L F Dimitrov R Mitchell A Stutzmann M 2000 01 01 Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN GaN heterostructures Journal of Applied Physics 87 1 334 344 Bibcode 2000JAP 87 334A doi 10 1063 1 371866 ISSN 0021 8979 Hickman Austin Lee Chaudhuri Reet Bader Samuel James Nomoto Kazuki Li Lei Hwang James C M Grace Xing Huili Jena Debdeep 2021 04 01 Next generation electronics on the ultrawide bandgap aluminum nitride platform Semiconductor Science and Technology 36 4 044001 Bibcode 2021SeScT 36d4001H doi 10 1088 1361 6641 abe5fd ISSN 0268 1242 S2CID 233936255 Xu Runjie Lily Munoz Rojo Miguel Islam S M Sood Aditya Vareskic Bozo Katre Ankita Mingo Natalio Goodson Kenneth E Xing Huili Grace Jena Debdeep Pop Eric 2019 11 14 Thermal conductivity of crystalline AlN and the influence of atomic scale defects Journal of Applied Physics 126 18 185105 arXiv 1904 00345 Bibcode 2019JAP 126r5105X doi 10 1063 1 5097172 ISSN 0021 8979 S2CID 90262793 Slack Glen A Bartram S F 1975 01 01 Thermal expansion of some diamondlike crystals Journal of Applied Physics 46 1 89 98 Bibcode 1975JAP 46 89S doi 10 1063 1 321373 ISSN 0021 8979 Berger L I 1997 Semiconductor Materials CRC Press pp 123 124 ISBN 978 0 8493 8912 2 Pradhan S Jena S K Patnaik S C Swain P K Majhi J 2015 02 19 Wear characteristics of Al AlN composites produced in situ by nitrogenation IOP Conference Series Materials Science and Engineering 75 1 012034 Bibcode 2015MS amp E 75a2034P doi 10 1088 1757 899X 75 1 012034 ISSN 1757 899X S2CID 137160554 Chih ming Lin Ting ta Yen Yun ju Lai Felmetsger V V Hopcroft M A Kuypers J H Pisano A P March 2010 Temperature compensated aluminum nitride lamb wave resonators IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control 57 3 524 532 doi 10 1109 TUFFC 2010 1443 PMID 20211766 S2CID 20028149 Xiong Chi Pernice Wolfram H P Sun Xiankai Schuck Carsten Fong King Y Tang Hong X 2012 Aluminum nitride as a new material for chip scale optomechanics and nonlinear optics New Journal of Physics 14 9 095014 arXiv 1210 0975 Bibcode 2012NJPh 14i5014X doi 10 1088 1367 2630 14 9 095014 ISSN 1367 2630 S2CID 118571039 Yamakawa Tomohiro Tatami Junichi Wakihara Toru Komeya Katsutoshi Meguro Takeshi MacKenzie Kenneth J D Takagi Shinichi Yokouchi Masahiro 2005 10 04 Synthesis of AlN Nanopowder from g Al2O3 by Reduction Nitridation in a Mixture of NH3 C3H8 Journal of the American Ceramic Society 89 1 171 175 doi 10 1111 j 1551 2916 2005 00693 x ISSN 0002 7820 Retrieved 2023 06 26 Lamanna Leonardo November 2023 Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices Materials Processing and Applications Advanced Materials Technologies 8 21 doi 10 1002 admt 202300362 ISSN 2365 709X Tsuruoka Doug 2014 03 17 Apple Samsung Cellphone Filter Orders Lift Avago Investor s Business Daily ACPF 7001 Agilent Technologies Announces FBAR Filter for U S PCS Band Mobile Phones and Data Cards wirelessZONE EN Genius Network Ltd 2002 05 27 Retrieved 2008 10 18 A Gestural Interface for Smart Watches Przybyla R al et 2014 3D Ultrasonic Gesture Recognition International Solid State Circuits Conference San Francisco pp 210 211 Ahmadi A Hadipour N L Kamfiroozi M Bagheri Z 2012 Theoretical study of aluminium nitride nanotubes for chemical sensing of formaldehyde Sensors and Actuators B Chemical 161 1 1025 1029 doi 10 1016 j snb 2011 12 001 Ahmadi Peyghan A Omidvar A Hadipour N L Bagheri Z Kamfiroozi M 2012 Can aluminum nitride nanotubes detect the toxic NH3 molecules Physica E 44 7 8 1357 1360 Bibcode 2012PhyE 44 1357A doi 10 1016 j physe 2012 02 018 Taniyasu Y et al 2006 An Aluminium Nitride Light Emitting Diode with a Wavelength of 210 Nanometres Nature 441 7091 325 328 Bibcode 2006Natur 441 325T doi 10 1038 nature04760 PMID 16710416 S2CID 4373542 Cited sources editHaynes William M ed 2016 CRC Handbook of Chemistry and Physics 97th ed CRC Press p 4 45 ISBN 9781498754293 Retrieved from https en 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