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5 nm process

January 11, 2023

In semiconductor manufacturing, the International Roadmap for Devices and Systems defines the 5 nm process as the MOSFET technology node following the 7 nm node. In 2020, Samsung and TSMC entered volume production of 5 nm chips, manufactured for companies including Apple, Marvell, Huawei and Qualcomm.[1][2]

The term "5 nm" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors being 5 nanometers in size. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection, a "5 nm node is expected to have a contacted gate pitch of 51 nanometers and a tightest metal pitch of 30 nanometers".[3] However, in real world commercial practice, "5 nm" is used primarily as a marketing term by individual microchip manufacturers to refer to a new, improved generation of silicon semiconductor chips in terms of increased transistor density (i.e. a higher degree of miniaturization), increased speed and reduced power consumption compared to the previous 7 nm process.[4][5]

History

Background

Quantum tunnelling effects through the gate oxide layer on 7 nm and 5 nm transistors became increasingly difficult to manage using existing semiconductor processes.[6] Single-transistor devices below 7 nm were first demonstrated by researchers in the early 2000s. In 2002, an IBM research team including Bruce Doris, Omer Dokumaci, Meikei Ieong and Anda Mocuta fabricated a 6-nanometre silicon-on-insulator (SOI) MOSFET.[7][8]

In 2003, a Japanese research team at NEC, led by Hitoshi Wakabayashi and Shigeharu Yamagami, fabricated the first 5 nm MOSFET.[9][10]

In 2015, IMEC and Cadence had fabricated 5 nm test chips. The fabricated test chips are not fully functional devices but rather are to evaluate patterning of interconnect layers.[11][12]

In 2015, Intel described a lateral nanowire (or gate-all-around) FET concept for the 5 nm node.[13]

In 2017, IBM revealed that it had created 5 nm silicon chips,[14] using silicon nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design. The GAAFET transistors used had 3 nanosheets stacked on top of each other, covered in their entirety by the same gate, just like FinFETs usually have several physical fins side by side that are electrically a single unit and are covered in their entirety by the same gate. IBM's chip measured 50 mm2 and had 600 million transistors per mm2, for a total of 30 billion transistors (1667 nm 2 per transistor or 41 nm transistor spacing). [15][16]

Commercialization

In April 2019, Samsung Electronics announced they had been offering their 5 nm process (5LPE) tools to their customers since 2018 Q4.[17] In April 2019, TSMC announced that their 5 nm process (CLN5FF, N5) had begun risk production, and that full chip design specifications were now available to potential customers. The N5 process can use EUVL on up to 14 layers, compared to only 5 or 4 layers in N6 and N7++.[18] For the expected 28 nm minimum metal pitch, SALELE is the proposed best patterning method.[19]

For their 5 nm process, Samsung started process defect mitigation by automated check and fix, due to occurrence of stochastic (random) defects in the metal and via layers.[20]

In October 2019, TSMC reportedly started sampling 5 nm A14 processors for Apple.[21]

In December 2019, TSMC announced an average yield of approximately 80%, with a peak yield per wafer of over 90% for their 5 nm test chips with a die size of 17.92 mm2.[22] In mid 2020 TSMC claimed its (N5) 5 nm process offered 1.8x the density of its 7 nm N7 process, with 15% speed improvement or 30% lower power consumption; an improved sub-version (N5P or N4) was claimed to improve on N5 with +5% speed or -10% power.[23]

On October 13, 2020, Apple announced a new iPhone 12 lineup using the A14. Together with the Huawei Mate 40 lineup using the HiSilicon Kirin 9000, the A14 and Kirin 9000 were the first devices to be commercialized on TSMC's 5 nm node. Later, on November 10, 2020, Apple also revealed three new Mac models using the Apple M1, another 5 nm chip. According to Semianalysis, the A14 processor has a transistor density of 134 million transistors per mm2.[24]

In October 2021, TSMC introduced a new member of its 5 nm process family: N4P. Compared to N5, the node offers 11% higher performance (6% higher vs N4), 22% higher power efficiency, 6% higher transistor density and lower mask count. TSMC expects first tapeouts by the second half of 2022.[25][26]

In December 2021, TSMC announced a new member of its 5 nm process family designed for HPC applications: N4X. The process features optimized transistor design and structures, reduced resistance and capacitance of targeted metal layers and high-density MiM capacitors. The process will offer up to 15% higher performance vs N5 (or up to 4% vs N4P) at 1.2 V and supply voltage in excess of 1.2 V. TSMC expects N4X to enter risk production by the first half of 2023.[27][28][29]

In June 2022, Intel presented some details about the Intel 4 process: the company's first process to use EUV, 2x higher transistor density compared to Intel 7, use of cobalt-clad copper for the finest five layers of interconnect, 21.5% higher performance at iso power or 40% lower power at iso frequency at 0.65 V compared to Intel 7 etc. Intel's first product to be fabbed on Intel 4 is Meteor Lake, powered on in Q2 2022 and scheduled for shipping in 2023.[30]

5 nm process nodes

IRDS roadmap 2017[31] Samsung[32][33][34][35][36] TSMC[32] Intel[37][30]
Process name 7 nm 5 nm 5LPE 5LPP 4LPE 4LPP N5 N5P N4 N4P N4X[27][28][29] 4N[38] 4
Transistor density (MTr/mm2) Un­known Un­known 126.9[39] Un­known 137[39] 138.2[40][41] 146.5[42] Un­known Un­known 160
SRAM bit-cell size (μm2) 0.027[43] 0.020[43] 0.0262[44] 0.021[44] Un­known Un­known Un­known Un­known 0.024[44]
Transistor gate pitch (nm) 48 42 57 51 Un­known Un­known 50
Interconnect pitch (nm) 28 24 36 Un­known 32 28[45] Un­known Un­known Un­known Un­known 30
Release status 2019 2021 2018 risk production[17]
2020 production 		2022 production 2020 risk production
2021 production 		2022 production 2019 risk production[18]
2020 production 		2020 risk production
2021 production 		2021 risk production
2022 production 		2022 risk production
2022 production 		Risk production by H1 2023
2024 production 		2022 production 2022 risk production[46]
2023 production

Transistor gate pitch is also referred to as CPP (contacted poly pitch) and interconnect pitch is also referred to as MMP (minimum metal pitch).[47][48]

Beyond 5 nm

Main article: 3 nm process

3 nm (3-nanometer) is the usual term for the next node after 5 nm. As of 2021, TSMC plans to commercialize the 3 nm node for 2022, while Samsung and Intel have plans for 2023.[37][49][50][51]

3.5 nm has also been given as a name for the first node beyond 5 nm.[52]

References

  1. ^ Cutress, Dr Ian. "'Better Yield on 5nm than 7nm': TSMC Update on Defect Rates for N5". AnandTech. from the original on 30 August 2020. Retrieved 28 August 2020.
  2. ^ "Marvell and TSMC Collaborate to Deliver Data Infrastructure Portfolio on 5nm Technology". HPCwire. from the original on 15 September 2020. Retrieved 28 August 2020.
  3. ^ International Roadmap for Devices and Systems: 2021 Update: More Moore, IEEE, 2021, p. 7, from the original on 7 August 2022, retrieved 7 August 2022
  4. ^ "TSMC's 7nm, 5nm, and 3nm "are just numbers… it doesn't matter what the number is"". from the original on 17 June 2020. Retrieved 20 April 2020.
  5. ^ Samuel K. Moore (21 July 2020). "A Better Way to Measure Progress in Semiconductors: It's time to throw out the old Moore's Law metric". IEEE Spectrum. IEEE. from the original on 2 December 2020. Retrieved 20 April 2021.
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  7. ^ . Theinquirer.net. 9 December 2002. Archived from the original on 31 May 2011. Retrieved 7 December 2017.{{cite web}}: CS1 maint: unfit URL (link)
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  10. ^ Wakabayashi, Hitoshi; Yamagami, Shigeharu; Ikezawa, Nobuyuki; Ogura, Atsushi; Narihiro, Mitsuru; Arai, K.; Ochiai, Y.; Takeuchi, K.; Yamamoto, T.; Mogami, T. (December 2003). Sub-10-nm planar-bulk-CMOS devices using lateral junction control. IEEE International Electron Devices Meeting 2003. pp. 20.7.1–20.7.3. doi:10.1109/IEDM.2003.1269446. ISBN 0-7803-7872-5. S2CID 2100267.
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  20. ^ Jaehwan Kim; Jin Kim; Byungchul Shin; Sangah Lee; Jae-Hyun Kang; Joong-Won Jeon; Piyush Pathak; Jac Condella; Frank E. Gennari; Philippe Hurat; Ya-Chieh Lai (23 March 2020). Process related yield risk mitigation with in-design pattern replacement for system ICs manufactured at advanced technology nodes. Proc. SPIE 11328, Design-Process-Technology Co-optimization for Manufacturability XIV, 113280I. San Jose, California, United States. doi:10.1117/12.2551970.
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  41. ^ "N3E Replaces N3; Comes in Many Flavors". 4 September 2022.
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External links

  • 5 nm lithography process
Preceded by
7 nm (FinFET) 		MOSFET semiconductor device fabrication process Succeeded by
3 nm (FinFET/GAAFET)

January 11, 2023
process, semiconductor, manufacturing, international, roadmap, devices, systems, defines, mosfet, technology, node, following, node, 2020, samsung, tsmc, entered, volume, production, chips, manufactured, companies, including, apple, marvell, huawei, qualcomm, . In semiconductor manufacturing the International Roadmap for Devices and Systems defines the 5 nm process as the MOSFET technology node following the 7 nm node In 2020 Samsung and TSMC entered volume production of 5 nm chips manufactured for companies including Apple Marvell Huawei and Qualcomm 1 2 The term 5 nm has no relation to any actual physical feature such as gate length metal pitch or gate pitch of the transistors being 5 nanometers in size According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection a 5 nm node is expected to have a contacted gate pitch of 51 nanometers and a tightest metal pitch of 30 nanometers 3 However in real world commercial practice 5 nm is used primarily as a marketing term by individual microchip manufacturers to refer to a new improved generation of silicon semiconductor chips in terms of increased transistor density i e a higher degree of miniaturization increased speed and reduced power consumption compared to the previous 7 nm process 4 5 Contents 1 History 1 1 Background 1 2 Commercialization 2 5 nm process nodes 3 Beyond 5 nm 4 References 5 External linksHistory EditBackground Edit Quantum tunnelling effects through the gate oxide layer on 7 nm and 5 nm transistors became increasingly difficult to manage using existing semiconductor processes 6 Single transistor devices below 7 nm were first demonstrated by researchers in the early 2000s In 2002 an IBM research team including Bruce Doris Omer Dokumaci Meikei Ieong and Anda Mocuta fabricated a 6 nanometre silicon on insulator SOI MOSFET 7 8 In 2003 a Japanese research team at NEC led by Hitoshi Wakabayashi and Shigeharu Yamagami fabricated the first 5 nm MOSFET 9 10 In 2015 IMEC and Cadence had fabricated 5 nm test chips The fabricated test chips are not fully functional devices but rather are to evaluate patterning of interconnect layers 11 12 In 2015 Intel described a lateral nanowire or gate all around FET concept for the 5 nm node 13 In 2017 IBM revealed that it had created 5 nm silicon chips 14 using silicon nanosheets in a gate all around configuration GAAFET a break from the usual FinFET design The GAAFET transistors used had 3 nanosheets stacked on top of each other covered in their entirety by the same gate just like FinFETs usually have several physical fins side by side that are electrically a single unit and are covered in their entirety by the same gate IBM s chip measured 50 mm2 and had 600 million transistors per mm2 for a total of 30 billion transistors 1667 nm 2 per transistor or 41 nm transistor spacing 15 16 Commercialization Edit In April 2019 Samsung Electronics announced they had been offering their 5 nm process 5LPE tools to their customers since 2018 Q4 17 In April 2019 TSMC announced that their 5 nm process CLN5FF N5 had begun risk production and that full chip design specifications were now available to potential customers The N5 process can use EUVL on up to 14 layers compared to only 5 or 4 layers in N6 and N7 18 For the expected 28 nm minimum metal pitch SALELE is the proposed best patterning method 19 For their 5 nm process Samsung started process defect mitigation by automated check and fix due to occurrence of stochastic random defects in the metal and via layers 20 In October 2019 TSMC reportedly started sampling 5 nm A14 processors for Apple 21 In December 2019 TSMC announced an average yield of approximately 80 with a peak yield per wafer of over 90 for their 5 nm test chips with a die size of 17 92 mm2 22 In mid 2020 TSMC claimed its N5 5 nm process offered 1 8x the density of its 7 nm N7 process with 15 speed improvement or 30 lower power consumption an improved sub version N5P or N4 was claimed to improve on N5 with 5 speed or 10 power 23 On October 13 2020 Apple announced a new iPhone 12 lineup using the A14 Together with the Huawei Mate 40 lineup using the HiSilicon Kirin 9000 the A14 and Kirin 9000 were the first devices to be commercialized on TSMC s 5 nm node Later on November 10 2020 Apple also revealed three new Mac models using the Apple M1 another 5 nm chip According to Semianalysis the A14 processor has a transistor density of 134 million transistors per mm2 24 In October 2021 TSMC introduced a new member of its 5 nm process family N4P Compared to N5 the node offers 11 higher performance 6 higher vs N4 22 higher power efficiency 6 higher transistor density and lower mask count TSMC expects first tapeouts by the second half of 2022 25 26 In December 2021 TSMC announced a new member of its 5 nm process family designed for HPC applications N4X The process features optimized transistor design and structures reduced resistance and capacitance of targeted metal layers and high density MiM capacitors The process will offer up to 15 higher performance vs N5 or up to 4 vs N4P at 1 2 V and supply voltage in excess of 1 2 V TSMC expects N4X to enter risk production by the first half of 2023 27 28 29 In June 2022 Intel presented some details about the Intel 4 process the company s first process to use EUV 2x higher transistor density compared to Intel 7 use of cobalt clad copper for the finest five layers of interconnect 21 5 higher performance at iso power or 40 lower power at iso frequency at 0 65 V compared to Intel 7 etc Intel s first product to be fabbed on Intel 4 is Meteor Lake powered on in Q2 2022 and scheduled for shipping in 2023 30 5 nm process nodes EditIRDS roadmap 2017 31 Samsung 32 33 34 35 36 TSMC 32 Intel 37 30 Process name 7 nm 5 nm 5LPE 5LPP 4LPE 4LPP N5 N5P N4 N4P N4X 27 28 29 4N 38 4Transistor density MTr mm2 Un known Un known 126 9 39 Un known 137 39 138 2 40 41 146 5 42 Un known Un known 160SRAM bit cell size mm2 0 027 43 0 020 43 0 0262 44 0 021 44 Un known Un known Un known Un known 0 024 44 Transistor gate pitch nm 48 42 57 51 Un known Un known 50Interconnect pitch nm 28 24 36 Un known 32 28 45 Un known Un known Un known Un known 30Release status 2019 2021 2018 risk production 17 2020 production 2022 production 2020 risk production2021 production 2022 production 2019 risk production 18 2020 production 2020 risk production2021 production 2021 risk production2022 production 2022 risk production2022 production Risk production by H1 20232024 production 2022 production 2022 risk production 46 2023 productionTransistor gate pitch is also referred to as CPP contacted poly pitch and interconnect pitch is also referred to as MMP minimum metal pitch 47 48 Beyond 5 nm EditMain article 3 nm process 3 nm 3 nanometer is the usual term for the next node after 5 nm As of 2021 update TSMC plans to commercialize the 3 nm node for 2022 while Samsung and Intel have plans for 2023 37 49 50 51 3 5 nm has also been given as a name for the first node beyond 5 nm 52 References Edit Cutress Dr Ian Better Yield on 5nm than 7nm TSMC Update on Defect Rates for N5 AnandTech Archived from the original on 30 August 2020 Retrieved 28 August 2020 Marvell and TSMC Collaborate to Deliver Data Infrastructure Portfolio on 5nm Technology HPCwire Archived from the original on 15 September 2020 Retrieved 28 August 2020 International Roadmap for Devices and Systems 2021 Update More Moore IEEE 2021 p 7 archived from the original on 7 August 2022 retrieved 7 August 2022 TSMC s 7nm 5nm and 3nm are just numbers it doesn t matter what the number is Archived from the original on 17 June 2020 Retrieved 20 April 2020 Samuel K Moore 21 July 2020 A Better Way to Measure Progress in Semiconductors It s time to throw out the old Moore s Law metric IEEE Spectrum IEEE Archived from the original on 2 December 2020 Retrieved 20 April 2021 Quantum Effects At 7 5nm And Beyond Semiconductor Engineering Archived from the original on 15 July 2018 Retrieved 15 July 2018 IBM claims world s smallest silicon transistor TheINQUIRER Theinquirer net 9 December 2002 Archived from the original on 31 May 2011 Retrieved 7 December 2017 a href Template Cite web html title Template Cite web cite web a CS1 maint unfit URL link Doris Bruce B Dokumaci Omer H Ieong Meikei K Mocuta Anda Zhang Ying Kanarsky Thomas S Roy R A December 2002 Extreme scaling with ultra thin Si channel MOSFETs Digest International Electron Devices Meeting pp 267 270 doi 10 1109 IEDM 2002 1175829 ISBN 0 7803 7462 2 S2CID 10151651 NEC test produces world s smallest transistor Thefreelibrary com Archived from the original on 15 April 2017 Retrieved 7 December 2017 Wakabayashi Hitoshi Yamagami Shigeharu Ikezawa Nobuyuki Ogura Atsushi Narihiro Mitsuru Arai K Ochiai Y Takeuchi K Yamamoto T Mogami T December 2003 Sub 10 nm planar bulk CMOS devices using lateral junction control IEEE International Electron Devices Meeting 2003 pp 20 7 1 20 7 3 doi 10 1109 IEDM 2003 1269446 ISBN 0 7803 7872 5 S2CID 2100267 IMEC and Cadence Disclose 5nm Test Chip Semiwiki com Archived from the original on 26 November 2015 Retrieved 25 November 2015 The Roadmap to 5nm Convergence of Many Solutions Needed Semi org Archived from the original on 26 November 2015 Retrieved 25 November 2015 Mark LaPedus 20 January 2016 5nm Fab Challenges Archived from the original on 27 January 2016 Retrieved 22 January 2016 Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading edge IC industry The company described a next generation transistor called the nanowire FET which is a finFET turned on its side with a gate wrapped around it Intel s nanowire FET sometimes called a gate all around FET is said to meet the device requirements for 5nm as defined by the International Technology Roadmap for Semiconductors ITRS Sebastian Anthony 5 June 2017 IBM unveils world s first 5nm chip Ars Technica Archived from the original on 5 June 2017 Retrieved 5 June 2017 Huiming Bu 5 June 2017 5 nanometer transistors inching their way into chips IBM Archived from the original on 9 June 2021 Retrieved 9 June 2021 IBM Figures Out How to Make 5nm Chips Uk pcmag com 5 June 2017 Archived from the original on 3 December 2017 Retrieved 7 December 2017 a b Shilov Anton Samsung Completes Development of 5nm EUV Process Technology AnandTech Archived from the original on 20 April 2019 Retrieved 31 May 2019 a b TSMC and OIP Ecosystem Partners Deliver Industry s First Complete Design Infrastructure for 5nm Process Technology Press release TSMC 3 April 2019 SALELE Double Patterning for 7nm and 5nm Nodes LinkedIn Archived from the original on 20 September 2021 Retrieved 25 March 2021 Jaehwan Kim Jin Kim Byungchul Shin Sangah Lee Jae Hyun Kang Joong Won Jeon Piyush Pathak Jac Condella Frank E Gennari Philippe Hurat Ya Chieh Lai 23 March 2020 Process related yield risk mitigation with in design pattern replacement for system ICs manufactured at advanced technology nodes Proc SPIE 11328 Design Process Technology Co optimization for Manufacturability XIV 113280I San Jose California United States doi 10 1117 12 2551970 Solca Bogdan TSMC already sampling Apple s 5 nm A14 Bionic SoCs for 2020 iPhones Notebookcheck Archived from the original on 12 January 2020 Retrieved 12 January 2020 Cutress Dr Ian Early TSMC 5nm Test Chip Yields 80 HVM Coming in H1 2020 AnandTech Archived from the original on 25 May 2020 Retrieved 19 December 2019 Hruska Joel 25 August 2020 TSMC Plots an Aggressive Course for 3nm Lithography and Beyond ExtremeTech Archived from the original on 22 September 2020 Retrieved 12 September 2020 Patel Dylan 27 October 2020 Apple s A14 Packs 134 Million Transistors mm but Falls Short of TSMC s Density Claims SemiAnalysis Archived from the original on 12 December 2020 Retrieved 29 October 2020 TSMC Expands Advanced Technology Leadership with N4P Process TSMC Press release 26 October 2021 TSMC Extends Its 5nm Family With A New Enhanced Performance N4P Node WikiChip 26 October 2021 Archived from the original on 29 May 2022 Retrieved 28 May 2022 a b TSMC Introduces N4X Process Press release TSMC 16 December 2021 a b The Future Is Now blog post TSMC 16 December 2021 Archived from the original on 7 May 2022 Retrieved 25 May 2022 a b TSMC Unveils N4X Node AnandTech 17 December 2021 Archived from the original on 25 May 2022 Retrieved 25 May 2022 a b Smith Ryan Intel 4 Process Node In Detail 2x Density Scaling 20 Improved Performance AnandTech Archived from the original on 13 June 2022 Retrieved 13 June 2022 IRDS international roadmap for devices and systems 2017 edition PDF Archived from the original PDF on 25 October 2018 a b Jones Scotten 29 April 2020 Can TSMC Maintain Their Process Technology Lead SemiWiki archived from the original on 13 May 2022 retrieved 11 April 2022 Samsung Foundry Update 2019 SemiWiki 6 August 2019 Archived from the original on 29 May 2022 Retrieved 14 May 2022 Samsung 5 nm and 4 nm Update WikiChip 19 October 2019 5 nm lithography process WikiChip Archived from the original on 6 November 2020 Retrieved 30 April 2017 Samsung 3nm GAAFET Enters Risk Production Discusses Next Gen Improvements 5 July 2022 a b Cutress Dr Ian Intel s Process Roadmap to 2025 with 4nm 3nm 20A and 18A AnandTech Archived from the original on 3 November 2021 Retrieved 27 July 2021 NVIDIA Delivers Quantum Leap in Performance Introduces New Era of Neural Rendering With GeForce RTX 40 Series NVIDIA Newsroom Retrieved 20 September 2022 a b Samsung 3nm GAAFET Enters Risk Production Discusses Next Gen Improvements 5 July 2022 The TRUTH of TSMC 5nm N3E Replaces N3 Comes in Many Flavors 4 September 2022 TSMC Extends Its 5nm Family With A New Enhanced Performance N4P Node WikiChip 26 October 2021 Archived from the original on 29 May 2022 Retrieved 28 May 2022 a b INTERNATIONAL ROADMAP FOR DEVICES AND SYSTEMS 2017 EDITION MORE MOORE PDF ITRS 2017 Section 4 5 Table MM 10 p 12 entries SRAM bitcell area um2 SRAM 111 bit cell area density Mbits mm2 archived from the original PDF on 25 October 2018 retrieved 24 October 2018 a b c Did We Just Witness The Death Of SRAM 4 December 2022 J C Liu et al A Reliability Enhanced 5nm CMOS Technology Featuring 5th Generation FinFET with Fully Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application 2020 IEEE International Electron Devices Meeting IEDM doi 10 1109 IEDM13553 2020 9372009 Gartenberg Chaim 29 July 2021 The summer Intel fell behind The Verge Archived from the original on 22 December 2021 Retrieved 22 December 2021 International Technology Roadmap for Semiconductors 2 0 2015 Edition Executive Report PDF Semiconductors org Archived from the original PDF on 2 October 2016 Retrieved 7 December 2017 5 nm lithography process WikiChip Archived from the original on 6 November 2020 Retrieved 7 December 2017 Samsung 3 nm GAAFET Node Delayed to 2024 Archived from the original on 17 December 2021 Retrieved 8 July 2021 Shilov Anton Samsung Deployment of 3nm GAE Node on Track for 2022 AnandTech Archived from the original on 27 July 2021 Retrieved 27 July 2021 Shilov Anton TSMC Update 2nm in Development 3nm and 4nm on Track for 2022 AnandTech Archived from the original on 27 July 2021 Retrieved 27 July 2021 15 Views from a Silicon Summit Macro to nano perspectives of chip horizon EE Times 16 January 2017 Archived from the original on 28 June 2018 Retrieved 4 June 2018 External links Edit5 nm lithography processPreceded by7 nm FinFET MOSFET semiconductor device fabrication process Succeeded by3 nm FinFET GAAFET Retrieved from https en wikipedia org w index php title 5 nm process amp oldid 1132241321, wikipedia, wiki, book, books, library,

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