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3 nm process

January 11, 2023

In semiconductor manufacturing, the 3 nm process is the next die shrink after the 5 nanometer MOSFET (metal–oxide–semiconductor field-effect transistor) technology node. An enhanced 3 nm chip process called N3e may start production in 2023.[1] South Korean chipmaker Samsung officially targeted the same time frame as TSMC (as of May 2022) with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd-gen 3 nm process (named 3GAP) to follow in 2023,[2][3] while according to other sources Samsung's 3 nm process will debut in 2024.[4] American manufacturer Intel plans to start 3 nm production in 2023.[5][6][7]

Samsung's 3 nm process is based on GAAFET (gate-all-around field-effect transistor) technology, a type of multi-gate MOSFET technology, while TSMC's 3 nm process will still use FinFET (fin field-effect transistor) technology,[8] despite TSMC developing GAAFET transistors.[9] Specifically, Samsung plans to use its own variant of GAAFET called MBCFET (multi-bridge channel field-effect transistor).[10] Intel's 3 nm process (dubbed "Intel 3" without the "nm" suffix) will use a refined, enhanced and optimized version of FinFET technology compared to its previous process nodes in terms of performance gained per watt, use of EUV lithography and power and area improvement.[11]

The term "3 nanometer" has no relation to any actual physical feature (such as gate length, metal pitch or gate pitch) of the transistors. According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection, a 3 nm node is expected to have a contacted gate pitch of 48 nanometers and a tightest metal pitch of 24 nanometers.[12] However, in real world commercial practice, "3 nm" is used primarily as a marketing term by individual microchip manufacturers to refer to a new, improved generation of silicon semiconductor chips in terms of increased transistor density (i.e. a higher degree of miniaturization), increased speed and reduced power consumption.[13][14] Moreover, there is no industry-wide agreement among different manufacturers about what numbers would define a 3 nm node. Typically the chip manufacturer refers to its own previous process node (in this case the 5 nm process node) for comparison. For example, TSMC has stated that its 3 nm FinFET chips will reduce power consumption by 25-30% at the same speed, increase speed by 10-15% at the same amount of power and increase transistor density by about 33% compared to its previous 5 nm FinFET chips.[15][16] On the other hand, Samsung has stated that its 3 nm process will reduce power consumption by 45%, improve performance by 23%, and decrease surface area by 16% compared to its previous 5 nm process.[17]

EUV faces new challenges at 3 nm which lead to the required use of multipatterning.[18]

History

Research and technology demos

In 1985, a Nippon Telegraph and Telephone (NTT) research team fabricated a MOSFET (NMOS) device with a channel length of 150 nm and gate oxide thickness of 2.5 nm.[19] In 1998, an Advanced Micro Devices (AMD) research team fabricated a MOSFET (NMOS) device with a channel length of 50 nm and oxide thickness of 1.3 nm.[20][21]

In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes.[22][23] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around (GAAFET) technology.[24][25]

Commercialization history

In late 2016, TSMC announced plans to construct a 5 nm–3 nm node semiconductor fabrication plant with a co-commitment investment of around US$15.7 billion.[26]

In 2017, TSMC announced it was to begin construction of the 3 nm semiconductor fabrication plant at the Tainan Science Park in Taiwan.[27] TSMC plans to start volume production of the 3 nm process node in 2023.[28][29][30][31][32]

In early 2018, IMEC (Interuniversity Microelectronics Centre) and Cadence stated they had taped out 3 nm test chips, using extreme ultraviolet lithography (EUV) and 193 nm immersion lithography.[33]

In early 2019, Samsung presented plans to manufacture 3 nm GAAFET (gate-all-around field-effect transistors) at the 3 nm node in 2021, using its own MBCFET transistor structure that uses nanosheets; delivering a 35% performance increase, 50% power reduction and a 45% reduction in area when compared with 7 nm.[34][35][36] Samsung's semiconductor roadmap also included products at 8, 7, 6, 5, and 4 nm 'nodes'.[37][38]

In December 2019, Intel announced plans for 3 nm production in 2025.[39]

In January 2020, Samsung announced the production of the world's first 3 nm GAAFET process prototype, and said that it is targeting mass production in 2021.[40]

In August 2020, TSMC announced details of its N3 3 nm process, which is new rather than being an improvement over its N5 5 nm process.[41] Compared with the N5 process, the N3 process should offer a 10–15% (1.10–1.15×) increase in performance, or a 25–35% (1.25–1.35×) decrease in power consumption, with a 1.7× increase in logic density (a scaling factor of 0.58), a 20% increase (0.8 scaling factor) in SRAM cell density, and a 10% increase in analog circuitry density. Since many designs include considerably more SRAM than logic, (a common ratio being 70% SRAM to 30% logic) die shrinks are expected to only be of around 26%. TSMC plans volume production in the second half of 2022.[42]

In July 2021, Intel presented brand new process technology roadmap, according to which Intel 3 process, the company's second node to use EUV and the last one to use FinFET before switching to Intel's RibbonFET transistor architecture, is now scheduled to enter product manufacturing phase in H2 2023.[5]

In October 2021, Samsung adjusted earlier plans and announced that the company is scheduled to start producing its customers’ first 3 nm-based chip designs in the first half of 2022, while its second generation of 3 nm is expected in 2023.[2]

In June 2022, at TSMC Technology Symposium, the company shared details of its N3E process technology scheduled for volume production in 2023 H2: 1.6× higher logic transistor density, 1.3× higher chip transistor density, 10-15% higher performance at iso power or 30-35% lower power at iso performance compared to TSMC N5 v1.0 process technology, FinFLEX technology, allowing to intermix libraries with different track heights within a block etc. TSMC also introduced new members of 3 nm process family: high-density variant N3S, high-performance variants N3P and N3X, and N3RF for RF applications.[43][44][45]

In June 2022, Samsung started "initial" production of a low-power, high-performance chip using 3 nm process technology with GAA architecture.[46][47] According to industry sources, Qualcomm has reserved some of 3 nm production capacity from Samsung.[48]

On July 25, 2022, Samsung celebrated the first shipment of 3 nm Gate-All-Around chips to a Chinese cryptocurrency mining firm PanSemi.[49][50][51][52] It was revealed that the newly introduced 3 nm MBCFET process technology offers 16% higher transistor density,[53] 23% higher performance or 45% lower power draw compared to an unspecified 5 nm process technology.[54] Goals for the second-generation 3 nm process technology include up to 35% higher transistor density,[53] further reduction of power draw by up to 50% or higher performance by 30%.[54][55][53]

3 nm process nodes

Samsung[2][56][57] TSMC[58] Intel[5]
Process name 3GAE 3GAP N3 N3E 3
Transistor type MBCFET MBCFET FinFET FinFET FinFET
Transistor density (MTr/mm2) 150[57] 195[57] 220[45] 180[45] Un­known
SRAM bit-cell size (μm2) Un­known Un­known 0.0199[59] 0.021[59] Un­known
Transistor gate pitch (nm) 40 Un­known 45 Un­known Un­known
Interconnect pitch (nm) 32 Un­known 22 Un­known Un­known
Release status 2022 risk production[2]
2022 production[46]
2022 shipping[60]		 2023 production[2] 2021 risk production
2022 H2 volume production[58]
2023 H1 shipping for revenue[61]		 2023 production[58] 2023 risk production[5]
2024 production[62]

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Further reading

  • Lapedus, Mark (21 June 2018), "Big Trouble At 3nm", semiengineering.com
  • Bae, Geumjong; Bae, D.-I.; Kang, M.; Hwang, S.M.; Kim, S.S.; Seo, B.; Kwon, T.Y.; Lee, T.J.; Moon, C.; Choi, Y.M.; Oikawa, K.; Masuoka, S.; Chun, K.Y.; Park, S.H.; Shin, H.J.; Kim, J.C.; Bhuwalka, K.K.; Kim, D.H.; Kim, W.J.; Yoo, J.; Jeon, H.Y.; Yang, M.S.; Chung, S.-J.; Kim, D.; Ham, B.H.; Park, K.J.; Kim, W.D.; Park, S.H.; Song, G.; et al. (December 2018), "3nm GAA Technology featuring Multi-Bridge-Channel FET for Low Power and High Performance Applications", 2018 IEEE International Electron Devices Meeting (IEDM) (conference paper), pp. 28.7.1–28.7.4, doi:10.1109/IEDM.2018.8614629, ISBN 978-1-7281-1987-8, S2CID 58673284

External links

  • 3 nm lithography process
Preceded by
5 nm (FinFET) 		MOSFET semiconductor device fabrication process Succeeded by
2 nm (GAAFET)

January 11, 2023
process, semiconductor, manufacturing, next, shrink, after, nanometer, mosfet, metal, oxide, semiconductor, field, effect, transistor, technology, node, enhanced, chip, process, called, start, production, 2023, south, korean, chipmaker, samsung, officially, ta. In semiconductor manufacturing the 3 nm process is the next die shrink after the 5 nanometer MOSFET metal oxide semiconductor field effect transistor technology node An enhanced 3 nm chip process called N3e may start production in 2023 1 South Korean chipmaker Samsung officially targeted the same time frame as TSMC as of May 2022 with the start of 3 nm production in the first half of 2022 using 3GAE process technology and with 2nd gen 3 nm process named 3GAP to follow in 2023 2 3 while according to other sources Samsung s 3 nm process will debut in 2024 4 American manufacturer Intel plans to start 3 nm production in 2023 5 6 7 Samsung s 3 nm process is based on GAAFET gate all around field effect transistor technology a type of multi gate MOSFET technology while TSMC s 3 nm process will still use FinFET fin field effect transistor technology 8 despite TSMC developing GAAFET transistors 9 Specifically Samsung plans to use its own variant of GAAFET called MBCFET multi bridge channel field effect transistor 10 Intel s 3 nm process dubbed Intel 3 without the nm suffix will use a refined enhanced and optimized version of FinFET technology compared to its previous process nodes in terms of performance gained per watt use of EUV lithography and power and area improvement 11 The term 3 nanometer has no relation to any actual physical feature such as gate length metal pitch or gate pitch of the transistors According to the projections contained in the 2021 update of the International Roadmap for Devices and Systems published by IEEE Standards Association Industry Connection a 3 nm node is expected to have a contacted gate pitch of 48 nanometers and a tightest metal pitch of 24 nanometers 12 However in real world commercial practice 3 nm is used primarily as a marketing term by individual microchip manufacturers to refer to a new improved generation of silicon semiconductor chips in terms of increased transistor density i e a higher degree of miniaturization increased speed and reduced power consumption 13 14 Moreover there is no industry wide agreement among different manufacturers about what numbers would define a 3 nm node Typically the chip manufacturer refers to its own previous process node in this case the 5 nm process node for comparison For example TSMC has stated that its 3 nm FinFET chips will reduce power consumption by 25 30 at the same speed increase speed by 10 15 at the same amount of power and increase transistor density by about 33 compared to its previous 5 nm FinFET chips 15 16 On the other hand Samsung has stated that its 3 nm process will reduce power consumption by 45 improve performance by 23 and decrease surface area by 16 compared to its previous 5 nm process 17 EUV faces new challenges at 3 nm which lead to the required use of multipatterning 18 Contents 1 History 1 1 Research and technology demos 1 2 Commercialization history 2 3 nm process nodes 3 References 4 Further reading 5 External linksHistory EditResearch and technology demos Edit In 1985 a Nippon Telegraph and Telephone NTT research team fabricated a MOSFET NMOS device with a channel length of 150 nm and gate oxide thickness of 2 5 nm 19 In 1998 an Advanced Micro Devices AMD research team fabricated a MOSFET NMOS device with a channel length of 50 nm and oxide thickness of 1 3 nm 20 21 In 2003 a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm using the PMOS and NMOS processes 22 23 In 2006 a team from the Korea Advanced Institute of Science and Technology KAIST and the National Nano Fab Center developed a 3 nm width multi gate MOSFET the world s smallest nanoelectronic device based on gate all around GAAFET technology 24 25 Commercialization history Edit In late 2016 TSMC announced plans to construct a 5 nm 3 nm node semiconductor fabrication plant with a co commitment investment of around US 15 7 billion 26 In 2017 TSMC announced it was to begin construction of the 3 nm semiconductor fabrication plant at the Tainan Science Park in Taiwan 27 TSMC plans to start volume production of the 3 nm process node in 2023 28 29 30 31 32 In early 2018 IMEC Interuniversity Microelectronics Centre and Cadence stated they had taped out 3 nm test chips using extreme ultraviolet lithography EUV and 193 nm immersion lithography 33 In early 2019 Samsung presented plans to manufacture 3 nm GAAFET gate all around field effect transistors at the 3 nm node in 2021 using its own MBCFET transistor structure that uses nanosheets delivering a 35 performance increase 50 power reduction and a 45 reduction in area when compared with 7 nm 34 35 36 Samsung s semiconductor roadmap also included products at 8 7 6 5 and 4 nm nodes 37 38 In December 2019 Intel announced plans for 3 nm production in 2025 39 In January 2020 Samsung announced the production of the world s first 3 nm GAAFET process prototype and said that it is targeting mass production in 2021 40 In August 2020 TSMC announced details of its N3 3 nm process which is new rather than being an improvement over its N5 5 nm process 41 Compared with the N5 process the N3 process should offer a 10 15 1 10 1 15 increase in performance or a 25 35 1 25 1 35 decrease in power consumption with a 1 7 increase in logic density a scaling factor of 0 58 a 20 increase 0 8 scaling factor in SRAM cell density and a 10 increase in analog circuitry density Since many designs include considerably more SRAM than logic a common ratio being 70 SRAM to 30 logic die shrinks are expected to only be of around 26 TSMC plans volume production in the second half of 2022 42 In July 2021 Intel presented brand new process technology roadmap according to which Intel 3 process the company s second node to use EUV and the last one to use FinFET before switching to Intel s RibbonFET transistor architecture is now scheduled to enter product manufacturing phase in H2 2023 5 In October 2021 Samsung adjusted earlier plans and announced that the company is scheduled to start producing its customers first 3 nm based chip designs in the first half of 2022 while its second generation of 3 nm is expected in 2023 2 In June 2022 at TSMC Technology Symposium the company shared details of its N3E process technology scheduled for volume production in 2023 H2 1 6 higher logic transistor density 1 3 higher chip transistor density 10 15 higher performance at iso power or 30 35 lower power at iso performance compared to TSMC N5 v1 0 process technology FinFLEX technology allowing to intermix libraries with different track heights within a block etc TSMC also introduced new members of 3 nm process family high density variant N3S high performance variants N3P and N3X and N3RF for RF applications 43 44 45 In June 2022 Samsung started initial production of a low power high performance chip using 3 nm process technology with GAA architecture 46 47 According to industry sources Qualcomm has reserved some of 3 nm production capacity from Samsung 48 On July 25 2022 Samsung celebrated the first shipment of 3 nm Gate All Around chips to a Chinese cryptocurrency mining firm PanSemi 49 50 51 52 It was revealed that the newly introduced 3 nm MBCFET process technology offers 16 higher transistor density 53 23 higher performance or 45 lower power draw compared to an unspecified 5 nm process technology 54 Goals for the second generation 3 nm process technology include up to 35 higher transistor density 53 further reduction of power draw by up to 50 or higher performance by 30 54 55 53 3 nm process nodes EditSamsung 2 56 57 TSMC 58 Intel 5 Process name 3GAE 3GAP N3 N3E 3Transistor type MBCFET MBCFET FinFET FinFET FinFETTransistor density MTr mm2 150 57 195 57 220 45 180 45 Un knownSRAM bit cell size mm2 Un known Un known 0 0199 59 0 021 59 Un knownTransistor gate pitch nm 40 Un known 45 Un known Un knownInterconnect pitch nm 32 Un known 22 Un known Un knownRelease status 2022 risk production 2 2022 production 46 2022 shipping 60 2023 production 2 2021 risk production2022 H2 volume production 58 2023 H1 shipping for revenue 61 2023 production 58 2023 risk production 5 2024 production 62 References Edit Ramish Zafar 4 March 2022 TSMC Exceeds 3nm Yield Expectations amp Production Can Start Sooner Than Planned wccftech com Archived from the original on 16 March 2022 Retrieved 19 March 2022 a b c d e Samsung Foundry Innovations Power the Future of Big Data AI ML and Smart Connected Devices 7 October 2021 Archived from the original on 8 April 2022 Retrieved 23 March 2022 Samsung Electronics Announces First Quarter 2022 Results Samsung 28 April 2022 Archived from the original on 10 May 2022 Retrieved 10 May 2022 Discuss btarunr Samsung 3 nm GAAFET Node Delayed to 2024 TechPowerUp com Archived from the original on 17 December 2021 Retrieved 22 November 2021 a b c d Cutress Dr Ian Intel s Process Roadmap to 2025 with 4nm 3nm 20A and 18A www anandtech com Archived from the original on 3 November 2021 Retrieved 27 July 2021 Gartenberg Chaim 26 July 2021 Intel has a new architecture roadmap and a plan to retake its chipmaking crown in 2025 The Verge Archived from the original on 20 December 2021 Retrieved 22 December 2021 Intel Technology Roadmaps and Milestones Intel Archived from the original on 16 July 2022 Retrieved 17 February 2022 Cutress Dr Ian Where are my GAA FETs TSMC to Stay with FinFET for 3nm Anandtech com Archived from the original on 2 September 2020 Retrieved 12 September 2020 TSMC Plots an Aggressive Course for 3nm Lithography and Beyond ExtremeTech Extremetech com Archived from the original on 22 September 2020 Retrieved 12 September 2020 Samsung at foundry event talks about 3nm MBCFET developments Techxplore com Archived from the original on 22 November 2021 Retrieved 22 November 2021 Patrick Moorhead 26 July 2021 Intel Updates IDM 2 0 Strategy With New Node Naming And Transistor And Packaging Technologies Forbes Archived from the original on 18 October 2021 Retrieved 18 October 2021 INTERNATIONAL ROADMAP FOR 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tsmc com 15 April 2022 Archived from the original on 20 April 2022 Retrieved 15 April 2022 a b Did We Just Witness The Death Of SRAM 4 December 2022 History is made Samsung beats out TSMC and starts shipping 3nm GAA chipsets 25 July 2022 Archived from the original on 23 August 2022 Retrieved 23 August 2022 TSMC Q2 2022 Earnings Call PDF TSMC 14 July 2022 Archived PDF from the original on 15 July 2022 Retrieved 22 July 2022 Cutress Dr Ian 17 February 2022 Intel Discloses Multi Generation Xeon Scalable Roadmap New E Core Only Xeons in 2024 www anandtech com Archived from the original on 15 March 2022 Retrieved 23 March 2022 Further reading EditLapedus Mark 21 June 2018 Big Trouble At 3nm semiengineering com Bae Geumjong Bae D I Kang M Hwang S M Kim S S Seo B Kwon T Y Lee T J Moon C Choi Y M Oikawa K Masuoka S Chun K Y Park S H Shin H J Kim J C Bhuwalka K K Kim D H Kim W J Yoo J Jeon H Y Yang M S Chung S J Kim D Ham B H Park K J Kim W D Park S H Song G et al December 2018 3nm GAA Technology featuring Multi Bridge Channel FET for Low Power and High Performance Applications 2018 IEEE International Electron Devices Meeting IEDM conference paper pp 28 7 1 28 7 4 doi 10 1109 IEDM 2018 8614629 ISBN 978 1 7281 1987 8 S2CID 58673284External links Edit3 nm lithography processPreceded by5 nm FinFET MOSFET semiconductor device fabrication process Succeeded by2 nm GAAFET Retrieved from https en wikipedia org w index php title 3 nm process amp oldid 1132740513, wikipedia, wiki, book, books, library,

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