Indium arsenide, InAs, or indium monoarsenide, is a narrow-bandgap semiconductor composed of indium and arsenic. It has the appearance of grey cubic crystals with a melting point of 942 °C.[5]
Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material, with a bandgap of 0.35 eV at room temperature.
Indium arsenide is used for the construction of infrared detectors, for the wavelength range of 1.0–3.8 µm. The detectors are usually photovoltaicphotodiodes. Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well. Indium arsenide is also used for making diode lasers.
InAs are well known for their high electron mobility and narrow energy bandgap. It is widely used as a terahertz radiation source as it is a strong photo-Dember emitter.
Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide. The mismatches of lattice constants of the materials create tensions in the surface layer, which in turn leads to the formation of the quantum dots.[6] Quantum dots can also be formed in indium gallium arsenide, as indium arsenide dots sitting in the gallium arsenide matrix.
indium, arsenide, inas, indium, monoarsenide, narrow, bandgap, semiconductor, composed, indium, arsenic, appearance, grey, cubic, crystals, with, melting, point, namesiupac, name, indium, arsenideother, names, indium, monoarsenideidentifierscas, number, 1303, . Indium arsenide InAs or indium monoarsenide is a narrow bandgap semiconductor composed of indium and arsenic It has the appearance of grey cubic crystals with a melting point of 942 C 5 Indium arsenide NamesIUPAC name Indium III arsenideOther names Indium monoarsenideIdentifiersCAS Number 1303 11 3 Y3D model JSmol Interactive imageInteractive imageChemSpider 82621 YECHA InfoCard 100 013 742PubChem CID 91500UNII J1A23S0911 YCompTox Dashboard EPA DTXSID5023825InChI InChI 1S As In YKey RPQDHPTXJYYUPQ UHFFFAOYSA N YInChI 1 As In rAsIn c1 2Key RPQDHPTXJYYUPQ FVESRWMKABSMILES In 3 As 3 In As PropertiesChemical formula InAsMolar mass 189 740 g molDensity 5 67 g cm3 1 Melting point 942 C 1 728 F 1 215 K 942 1 Band gap 0 354 eV 300 K Electron mobility 40000 cm2 V s Thermal conductivity 0 27 W cm K 300 K Refractive index nD 4 2 StructureCrystal structure Zinc blendeLattice constant a 6 0583 AThermochemistry 3 Heat capacity C 47 8 J mol 1 K 1Std molarentropy S 298 75 7 J mol 1 K 1Std enthalpy offormation DfH 298 58 6 kJ mol 1Gibbs free energy DfG 53 6 kJ mol 1HazardsGHS labelling Pictograms 4 Signal word Danger 4 Hazard statements H301 H331 4 Precautionary statements P261 P301 P310 P304 P340 P311 P405 P501 4 NFPA 704 fire diamond 400Safety data sheet SDS External SDSRelated compoundsOther anions Indium nitrideIndium phosphideIndium antimonideOther cations Gallium arsenideExcept where otherwise noted data are given for materials in their standard state at 25 C 77 F 100 kPa Y verify what is Y N Infobox references Indium arsenide is similar in properties to gallium arsenide and is a direct bandgap material with a bandgap of 0 35 eV at room temperature Indium arsenide is used for the construction of infrared detectors for the wavelength range of 1 0 3 8 µm The detectors are usually photovoltaic photodiodes Cryogenically cooled detectors have lower noise but InAs detectors can be used in higher power applications at room temperature as well Indium arsenide is also used for making diode lasers InAs are well known for their high electron mobility and narrow energy bandgap It is widely used as a terahertz radiation source as it is a strong photo Dember emitter Quantum dots can be formed in a monolayer of indium arsenide on indium phosphide or gallium arsenide The mismatches of lattice constants of the materials create tensions in the surface layer which in turn leads to the formation of the quantum dots 6 Quantum dots can also be formed in indium gallium arsenide as indium arsenide dots sitting in the gallium arsenide matrix References edit a b Haynes p 4 66 Haynes pp 12 157 Haynes p 5 22 a b c d Indium Arsenide American Elements Retrieved October 12 2018 Thermal properties of Indium Arsenide InAs Retrieved 2011 11 22 oe magazine eye on technology Archived from the original on 2006 10 18 Retrieved 2011 11 22 Cited sources editHaynes William M ed 2016 CRC Handbook of Chemistry and Physics 97th ed CRC Press ISBN 9781498754293 External links editIoffe institute data archive entry National Compound Semiconductor Roadmap entry for InAs at ONR web site Retrieved from https en wikipedia org w index php title Indium arsenide amp oldid 1141120769, wikipedia, wiki, book, books, library,
