Monolithic microwave integrated circuit, or MMIC (sometimes pronounced "mimic"), is a type of integrated circuit (IC) device that operates at microwavefrequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are frequently matched to a characteristic impedance of 50 ohms. This makes them easier to use, as cascading of MMICs does not then require an external matching network. Additionally, most microwave test equipment is designed to operate in a 50-ohm environment.
Photograph of a GaAs MMIC (a 2–18 GHz upconverter)MMIC MSA-0686.
MMICs are dimensionally small (from around 1 mm2 to 10 mm2) and can be mass-produced, which has allowed the proliferation of high-frequency devices such as cellular phones. MMICs were originally fabricated using gallium arsenide (GaAs), a III-V compound semiconductor. It has two fundamental advantages over silicon (Si), the traditional material for IC realisation: device (transistor) speed and a semi-insulating substrate. Both factors help with the design of high-frequency circuit functions. However, the speed of Si-based technologies has gradually increased as transistor feature sizes have reduced, and MMICs can now also be fabricated in Si technology. The primary advantage of Si technology is its lower fabrication cost compared with GaAs. Silicon wafer diameters are larger (typically 8" to 12" compared with 4" to 8" for GaAs) and the wafer costs are lower, contributing to a less expensive IC.
Other III-V technologies, such as indium phosphide (InP), have been shown to offer superior performance to GaAs in terms of gain, higher cutoff frequency, and low noise. However, they also tend to be more expensive due to smaller wafer sizes and increased material fragility.
Silicon germanium (SiGe) is a Si-based compound semiconductor technology offering higher-speed transistors than conventional Si devices but with similar cost advantages.
Gallium nitride (GaN) is also an option for MMICs.[1] Because GaN transistors can operate at much higher temperatures and work at much higher voltages than GaAs transistors, they make ideal power amplifiers at microwave frequencies.
Practical MMIC Design, Steve Marsh, published by Artech House ISBN1-59693-036-5
RFIC and MMIC Design and Technology, editors I. D. Robertson and S. Lucyszyn, published by the IEE (London) ISBN0-85296-786-1
^"A reprieve for Moore's Law: milspec chip writes computing's next chapter". Ars Technica. 2016-06-09. Retrieved 2016-06-14.
January 01, 1970
monolithic, microwave, integrated, circuit, this, article, includes, list, references, related, reading, external, links, sources, remain, unclear, because, lacks, inline, citations, please, help, improve, this, article, introducing, more, precise, citations, . This article includes a list of references related reading or external links but its sources remain unclear because it lacks inline citations Please help improve this article by introducing more precise citations February 2020 Learn how and when to remove this message Monolithic microwave integrated circuit or MMIC sometimes pronounced mimic is a type of integrated circuit IC device that operates at microwave frequencies 300 MHz to 300 GHz These devices typically perform functions such as microwave mixing power amplification low noise amplification and high frequency switching Inputs and outputs on MMIC devices are frequently matched to a characteristic impedance of 50 ohms This makes them easier to use as cascading of MMICs does not then require an external matching network Additionally most microwave test equipment is designed to operate in a 50 ohm environment Photograph of a GaAs MMIC a 2 18 GHz upconverter MMIC MSA 0686 MMICs are dimensionally small from around 1 mm2 to 10 mm2 and can be mass produced which has allowed the proliferation of high frequency devices such as cellular phones MMICs were originally fabricated using gallium arsenide GaAs a III V compound semiconductor It has two fundamental advantages over silicon Si the traditional material for IC realisation device transistor speed and a semi insulating substrate Both factors help with the design of high frequency circuit functions However the speed of Si based technologies has gradually increased as transistor feature sizes have reduced and MMICs can now also be fabricated in Si technology The primary advantage of Si technology is its lower fabrication cost compared with GaAs Silicon wafer diameters are larger typically 8 to 12 compared with 4 to 8 for GaAs and the wafer costs are lower contributing to a less expensive IC Originally MMICs used metal semiconductor field effect transistors MESFETs as the active device More recently high electron mobility transistor HEMTs pseudomorphic HEMTs and heterojunction bipolar transistors have become common Other III V technologies such as indium phosphide InP have been shown to offer superior performance to GaAs in terms of gain higher cutoff frequency and low noise However they also tend to be more expensive due to smaller wafer sizes and increased material fragility Silicon germanium SiGe is a Si based compound semiconductor technology offering higher speed transistors than conventional Si devices but with similar cost advantages Gallium nitride GaN is also an option for MMICs 1 Because GaN transistors can operate at much higher temperatures and work at much higher voltages than GaAs transistors they make ideal power amplifiers at microwave frequencies See also editHybrid integrated circuit Transmission lineReferences editPractical MMIC Design Steve Marsh published by Artech House ISBN 1 59693 036 5 RFIC and MMIC Design and Technology editors I D Robertson and S Lucyszyn published by the IEE London ISBN 0 85296 786 1 A reprieve for Moore s Law milspec chip writes computing s next chapter Ars Technica 2016 06 09 Retrieved 2016 06 14 Retrieved from https en wikipedia org w index php title Monolithic microwave integrated circuit amp oldid 1219149096, wikipedia, wiki, book, books, library,
