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Indium gallium phosphide

Indium gallium phosphide (InGaP), also called gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.

It is used mainly in HEMT and HBT structures, but also for the fabrication of high efficiency solar cells used for space applications and, in combination with aluminium (AlGaInP alloy) to make high brightness LEDs with orange-red, orange, yellow, and green colors. Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle.

Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide.

Ga0.5In0.5P is a solid solution of special importance, which is almost lattice matched to GaAs. This allows, in combination with (AlxGa1−x)0.5In0.5, the growth of lattice matched quantum wells for red emitting semiconductor lasers, e.g. red emitting (650nm) RCLEDs or VCSELs for PMMA plastic optical fibers.

Ga0.5In0.5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs. Recent years have shown GaInP/GaAs tandem solar cells with AM0 (sunlight incidence in space=1.35 kW/m2) efficiencies in excess of 25%.[1]

A different composition of GaInP, lattice matched to the underlying GaInAs, is utilized as the high energy junction GaInP/GaInAs/Ge triple junction photovoltaic cells.

Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material, rather than a truly random solid solution (i.e., a mixture). This changes the bandgap and the electronic and optical properties of the material.

See also edit

References edit

  1. ^ Alex Freundlich. . University of Houston Center for Advanced Materials. Archived from the original on 2009-05-10. Retrieved 2008-11-14.

External links edit

  • NSM Archive


indium, gallium, phosphide, this, article, needs, additional, citations, verification, please, help, improve, this, article, adding, citations, reliable, sources, unsourced, material, challenged, removed, find, sources, news, newspapers, books, scholar, jstor,. This article needs additional citations for verification Please help improve this article by adding citations to reliable sources Unsourced material may be challenged and removed Find sources Indium gallium phosphide news newspapers books scholar JSTOR July 2022 Learn how and when to remove this template message Indium gallium phosphide InGaP also called gallium indium phosphide GaInP is a semiconductor composed of indium gallium and phosphorus It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide It is used mainly in HEMT and HBT structures but also for the fabrication of high efficiency solar cells used for space applications and in combination with aluminium AlGaInP alloy to make high brightness LEDs with orange red orange yellow and green colors Some semiconductor devices such as EFluor Nanocrystal use InGaP as their core particle Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide Ga0 5In0 5P is a solid solution of special importance which is almost lattice matched to GaAs This allows in combination with AlxGa1 x 0 5In0 5 the growth of lattice matched quantum wells for red emitting semiconductor lasers e g red emitting 650nm RCLEDs or VCSELs for PMMA plastic optical fibers Ga0 5In0 5P is used as the high energy junction on double and triple junction photovoltaic cells grown on GaAs Recent years have shown GaInP GaAs tandem solar cells with AM0 sunlight incidence in space 1 35 kW m2 efficiencies in excess of 25 1 A different composition of GaInP lattice matched to the underlying GaInAs is utilized as the high energy junction GaInP GaInAs Ge triple junction photovoltaic cells Growth of GaInP by epitaxy can be complicated by the tendency of GaInP to grow as an ordered material rather than a truly random solid solution i e a mixture This changes the bandgap and the electronic and optical properties of the material See also editGallium phosphide Indium III phosphide Indium gallium nitride Indium gallium arsenide GaInP GaAs solar cellReferences edit Alex Freundlich Multi Quantum Well Tandem Solar Cells University of Houston Center for Advanced Materials Archived from the original on 2009 05 10 Retrieved 2008 11 14 E F Schubert Light emitting diodes ISBN 0 521 53351 1External links editEMCORE Solar Cells Spectrolab Solar Cells NSM Archive nbsp This condensed matter physics related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title Indium gallium phosphide amp oldid 1100822590, wikipedia, wiki, book, books, library,

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