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Two-dimensional semiconductor

January 01, 1970

A two-dimensional semiconductor (also known as 2D semiconductor) is a type of natural semiconductor with thicknesses on the atomic scale. Geim and Novoselov et al. initiated the field in 2004 when they reported a new semiconducting material graphene, a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice.[1] A 2D monolayer semiconductor is significant because it exhibits stronger piezoelectric coupling than traditionally employed bulk forms. This coupling could enable applications.[2] One research focus is on designing nanoelectronic components by the use of graphene as electrical conductor, hexagonal boron nitride as electrical insulator, and a transition metal dichalcogenide as semiconductor.[3][4]

Materials edit

 
Monolayer graphene

Graphene edit

Main article: Graphene

Graphene, consisting of single sheets of carbon atoms, has high electron mobility and high thermal conductivity. One issue regarding graphene is its lack of a band gap, which poses a problem in particular with digital electronics because it is unable to switch off field-effect transistors (FETs).[3]

 
Layered structure of h-BN

Hexagonal boron nitride edit

Monolayer hexagonal boron nitride (h-BN) is an insulator with a high energy gap (5.97 eV).[5] However, it can also function as a semiconductor with enhanced conductivity due to its zigzag sharp edges and vacancies. h-BN is often used as substrate and barrier due to its insulating property. h-BN also has a large thermal conductivity.

 
Layered structure of MoS2, Mo in green, S in yellow

Transition-metal dichalcogenides edit

Main article: Transition metal dichalcogenide monolayers

Transition-metal dichalcogenide monolayers (TMDs or TMDCs) are a class of two-dimensional materials that have the chemical formula MX2, where M represents transition metals from group VI, V and VI, and X represents a chalcogen such as sulfur, selenium or tellurium.[6] MoS2, MoSe2, MoTe2, WS2 and WSe2 are TMDCs. TMDCs have layered structure with a plane of metal atoms in between two planes of chalcogen atoms as shown in Figure 1. Each layer is bonded strongly in plane, but weakly in interlayers. Therefore, TMDCs can be easily exfoliated into atomically thin layers through various methods. TMDCs show layer-dependent optical and electrical properties. When exfoliated into monolayers, the band gaps of several TMDCs change from indirect to direct,[7] which lead to broad applications in nanoelectronics,[3] optoelectronics,[8][9] and quantum computing.[10]

III-VI chalcogenides edit

Another class of 2D semiconductors are III-VI chalcogenides. These materials have the chemical formula MX, where M is a metal from group 13 (Ga, In) and X is a chalcogen atom (S, Se, Te). Typical members of this group are InSe and GaSe, both of which have shown high electronic mobilities and band gaps suitable for a wide range of electronic applications.[11][12]

Synthesis edit

 
CVD setup for MoS2 synthesis

2D semiconductor materials are often synthesized using a chemical vapor deposition (CVD) method. Because CVD can provide large-area, high-quality, and well-controlled layered growth of 2D semiconductor materials, it also allows synthesis of two-dimensional heterojunctions.[13] When building devices by stacking different 2D materials, mechanical exfoliation followed by transferring is often used.[4][6] Other possible synthesis methods include electrochemical deposition,[14][15] chemical exfoliation, hydrothermal synthesis, and thermal decomposition. In 2008 cadmium selenide CdSe quasi 2D platelets were first synthesized by colloidal method with thicknesses of several atomic layers and lateral sizes up to dozens of nanometers.[16] Modification of the procedure allowed to obtain other nanoparticles with different compositions (like CdTe,[17] HgSe,[18] CdSexS1−x alloys,[19] core/shell[20] and core/crown [21] heterostructures) and shapes (as scrolls,[22] nanoribbons,[23] etc).

Mechanical Behavior edit

2D semiconductor materials unique crystal structures often yield unique mechanical properties, especially in the monolayer limit, such as high stiffness and strength in the 2D atomic plane, but low flexural rigidity.[24] Testing these materials is more challenging that their bulk counterparts, with methods employing the use of scanning probe techniques such as atomic force microscopy (AFM). These experimental methods are typically performed on 2D materials suspended over holes in a substrate. The tip of the AFM is then used to press into the flake and measure the response of the material. From this mechanical properties such as Young modulus, yield strain, and flexural strength.

Graphene edit

With a Youngs modulus of almost 1 TPa,[25] graphene boasts incredible toughness due to the strength of the carbon-carbon bonding. Graphene however, has a fracture toughness of about 4 MPa/m, making it brittle and easy to crack .[26] Graphene was later shown by the same group that discovered its fracture toughness, to have incredible fore distribution abilities, with about ten times the ability of steel.[27]

Atomically thin boron nitride edit

Monolayer boron nitride has fracture strength and Youngs modulus of 70.5 GPa and 0.865 TPa, respectively. Boron nitride also maintains its high Youngs modulus and fracture strengths with increasing thickness.[28]

Transition metal dichalcogenides edit

2D transition metal dichalcogenides are often used in applications such as flexible and stretchable electronics, where an understanding of their mechanical properties and the operational impact of mechanical changes to the materials is paramount for device performance. Under strain TMDs change their electronic bandgap structure of both the direct gap monolayer and the indirect gap few layer cases indicating applied strain as a tunable parameter.[29] Monolayer MoS2 has a Youngs modulus of 270 GPA and with a maximum strain of 10% before yield.[30] In comparison, bilayer MoS2 has a Youngs modulus of 200 GPa attributed to interlayer slip.[30] As layer number is increased further the interlayer slip is overshadowed by the bending rigidity with a Youngs modulus of 330 GPa.[31]

Proposed applications edit

 
Proposed TMDC-based high-electron-mobility transistor device with top-gated Schottky contact and TMDC layers with different doping levels.[32]

Some applications include electronic devices,[33] photonic and energy harvesting devices, and flexible and transparent substrates.[3] Other applications include on quantum computing qubit devices[10] solar cells,[34] and flexible electronics.[6]

 
Proposed vdW qubit composed of ZrSe2/SnSe2. The electrode VG applies the vertical electric field, changing the state of the electron in the conduction band, represented by the green Bloch sphere. Zr, Sn, and Se in red, blue, and gray, respectively.[10]

Quantum computing edit

Theoretical work has predicted the control of the band edges hybridization on some van der Waals heterostructures via electric fields and proposed its usage in quantum bit devices, considering the ZrSe2/SnSe2 heterobilayer as an example.[10] Further experimental work has confirmed these predictions for the case of the MoS2/WS2 heterobilayer.[35]

Magnetic NEMS edit

2D layered magnetic materials are attractive building blocks for nanoelectromechanical systems (NEMS): while they share high stiffness and strength and low mass with other 2D materials, they are magnetically active. Among the large class of newly emerged 2D layered magnetic materials, of particular interest is few-layer CrI3, whose magnetic ground state consists of antiferromagnetically coupled ferromagnetic (FM) monolayers with out-of-plane easy axis. The interlayer exchange interaction is relatively weak, a magnetic field on the order of 0.5 T in the out-of-plane (𝒛) direction can induce spin-flip transition in bilayer CrI3. Remarkable phenomena and device concepts based on detecting and controlling the interlayer magnetic state have been recently demonstrated, including spin-filter giant magnetoresistance, magnetic switching by electric field or electrostatic doping, and spin transistors. The coupling between the magnetic and mechanical properties in atomically thin materials, the basis for 2D magnetic NEMS, however, remains elusive although NEMS made of thicker magnetic materials or coated with FM metals have been studied.

References edit

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January 01, 1970
dimensional, semiconductor, dimensional, semiconductor, also, known, semiconductor, type, natural, semiconductor, with, thicknesses, atomic, scale, geim, novoselov, initiated, field, 2004, when, they, reported, semiconducting, material, graphene, flat, monolay. A two dimensional semiconductor also known as 2D semiconductor is a type of natural semiconductor with thicknesses on the atomic scale Geim and Novoselov et al initiated the field in 2004 when they reported a new semiconducting material graphene a flat monolayer of carbon atoms arranged in a 2D honeycomb lattice 1 A 2D monolayer semiconductor is significant because it exhibits stronger piezoelectric coupling than traditionally employed bulk forms This coupling could enable applications 2 One research focus is on designing nanoelectronic components by the use of graphene as electrical conductor hexagonal boron nitride as electrical insulator and a transition metal dichalcogenide as semiconductor 3 4 Contents 1 Materials 1 1 Graphene 1 2 Hexagonal boron nitride 1 3 Transition metal dichalcogenides 1 4 III VI chalcogenides 2 Synthesis 3 Mechanical Behavior 3 1 Graphene 3 2 Atomically thin boron nitride 3 3 Transition metal dichalcogenides 4 Proposed applications 4 1 Quantum computing 4 2 Magnetic NEMS 5 ReferencesMaterials edit nbsp Monolayer graphene Graphene edit Main article Graphene Graphene consisting of single sheets of carbon atoms has high electron mobility and high thermal conductivity One issue regarding graphene is its lack of a band gap which poses a problem in particular with digital electronics because it is unable to switch off field effect transistors FETs 3 nbsp Layered structure of h BN Hexagonal boron nitride edit Monolayer hexagonal boron nitride h BN is an insulator with a high energy gap 5 97 eV 5 However it can also function as a semiconductor with enhanced conductivity due to its zigzag sharp edges and vacancies h BN is often used as substrate and barrier due to its insulating property h BN also has a large thermal conductivity nbsp Layered structure of MoS2 Mo in green S in yellow Transition metal dichalcogenides edit Main article Transition metal dichalcogenide monolayers Transition metal dichalcogenide monolayers TMDs or TMDCs are a class of two dimensional materials that have the chemical formula MX2 where M represents transition metals from group VI V and VI and X represents a chalcogen such as sulfur selenium or tellurium 6 MoS2 MoSe2 MoTe2 WS2 and WSe2 are TMDCs TMDCs have layered structure with a plane of metal atoms in between two planes of chalcogen atoms as shown in Figure 1 Each layer is bonded strongly in plane but weakly in interlayers Therefore TMDCs can be easily exfoliated into atomically thin layers through various methods TMDCs show layer dependent optical and electrical properties When exfoliated into monolayers the band gaps of several TMDCs change from indirect to direct 7 which lead to broad applications in nanoelectronics 3 optoelectronics 8 9 and quantum computing 10 III VI chalcogenides edit Another class of 2D semiconductors are III VI chalcogenides These materials have the chemical formula MX where M is a metal from group 13 Ga In and X is a chalcogen atom S Se Te Typical members of this group are InSe and GaSe both of which have shown high electronic mobilities and band gaps suitable for a wide range of electronic applications 11 12 Synthesis edit nbsp CVD setup for MoS2 synthesis 2D semiconductor materials are often synthesized using a chemical vapor deposition CVD method Because CVD can provide large area high quality and well controlled layered growth of 2D semiconductor materials it also allows synthesis of two dimensional heterojunctions 13 When building devices by stacking different 2D materials mechanical exfoliation followed by transferring is often used 4 6 Other possible synthesis methods include electrochemical deposition 14 15 chemical exfoliation hydrothermal synthesis and thermal decomposition In 2008 cadmium selenide CdSe quasi 2D platelets were first synthesized by colloidal method with thicknesses of several atomic layers and lateral sizes up to dozens of nanometers 16 Modification of the procedure allowed to obtain other nanoparticles with different compositions like CdTe 17 HgSe 18 CdSexS1 x alloys 19 core shell 20 and core crown 21 heterostructures and shapes as scrolls 22 nanoribbons 23 etc Mechanical Behavior edit2D semiconductor materials unique crystal structures often yield unique mechanical properties especially in the monolayer limit such as high stiffness and strength in the 2D atomic plane but low flexural rigidity 24 Testing these materials is more challenging that their bulk counterparts with methods employing the use of scanning probe techniques such as atomic force microscopy AFM These experimental methods are typically performed on 2D materials suspended over holes in a substrate The tip of the AFM is then used to press into the flake and measure the response of the material From this mechanical properties such as Young modulus yield strain and flexural strength Graphene edit With a Youngs modulus of almost 1 TPa 25 graphene boasts incredible toughness due to the strength of the carbon carbon bonding Graphene however has a fracture toughness of about 4 MPa m making it brittle and easy to crack 26 Graphene was later shown by the same group that discovered its fracture toughness to have incredible fore distribution abilities with about ten times the ability of steel 27 Atomically thin boron nitride edit Monolayer boron nitride has fracture strength and Youngs modulus of 70 5 GPa and 0 865 TPa respectively Boron nitride also maintains its high Youngs modulus and fracture strengths with increasing thickness 28 Transition metal dichalcogenides edit 2D transition metal dichalcogenides are often used in applications such as flexible and stretchable electronics where an understanding of their mechanical properties and the operational impact of mechanical changes to the materials is paramount for device performance Under strain TMDs change their electronic bandgap structure of both the direct gap monolayer and the indirect gap few layer cases indicating applied strain as a tunable parameter 29 Monolayer MoS2 has a Youngs modulus of 270 GPA and with a maximum strain of 10 before yield 30 In comparison bilayer MoS2 has a Youngs modulus of 200 GPa attributed to interlayer slip 30 As layer number is increased further the interlayer slip is overshadowed by the bending rigidity with a Youngs modulus of 330 GPa 31 Proposed applications edit nbsp Proposed TMDC based high electron mobility transistor device with top gated Schottky contact and TMDC layers with different doping levels 32 Some applications include electronic devices 33 photonic and energy harvesting devices and flexible and transparent substrates 3 Other applications include on quantum computing qubit devices 10 solar cells 34 and flexible electronics 6 nbsp Proposed vdW qubit composed of ZrSe2 SnSe2 The electrode VG applies the vertical electric field changing the state of the electron in the conduction band represented by the green Bloch sphere Zr Sn and Se in red blue and gray respectively 10 Quantum computing edit Theoretical work has predicted the control of the band edges hybridization on some van der Waals heterostructures via electric fields and proposed its usage in quantum bit devices considering the ZrSe2 SnSe2 heterobilayer as an example 10 Further experimental work has confirmed these predictions for the case of the MoS2 WS2 heterobilayer 35 Magnetic NEMS edit 2D layered magnetic materials are attractive building blocks for nanoelectromechanical systems NEMS while they share high stiffness and strength and low mass with other 2D materials they are magnetically active Among the large class of newly emerged 2D layered magnetic materials of particular interest is few layer CrI3 whose magnetic ground state consists of antiferromagnetically coupled ferromagnetic FM monolayers with out of plane easy axis The interlayer exchange interaction is relatively weak a magnetic field on the order of 0 5 T in the out of plane 𝒛 direction can induce spin flip transition in bilayer CrI3 Remarkable phenomena and device concepts based on detecting and controlling the interlayer magnetic state have been recently demonstrated including spin filter giant magnetoresistance magnetic switching by electric field or electrostatic doping and spin transistors The coupling between the magnetic and mechanical properties in atomically thin materials the basis for 2D magnetic NEMS however remains elusive although NEMS made of thicker magnetic materials or coated with FM metals have been studied References edit Novoselov K S 2004 Electric Field Effect in Atomically Thin Carbon Films Science 306 5696 666 669 arXiv cond mat 0410550 Bibcode 2004Sci 306 666N doi 10 1126 science 1102896 ISSN 0036 8075 PMID 15499015 S2CID 5729649 Song Xiufeng Hu Jinlian Zeng Haibo 2013 Two dimensional semiconductors recent progress and future perspectives Journal of Materials Chemistry C 1 17 2952 doi 10 1039 C3TC00710C a b c d Radisavljevic B Radenovic A Brivio J Giacometti V Kis A 2011 Single layer MoS2 transistors 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