The sublimation sandwich method (also called the sublimation sandwich process and the sublimation sandwich technique) is a kind of physical vapor deposition used for creating man-made crystals. Silicon carbide is the most common crystal grown this way, though others crystals may also be created with it (notably gallium nitride).
Si is silicon, C is carbon, SiC2 is silicon dicarbide, Si2C is disilicon carbide, Ar is gaseous argon
In this method, the environment around a single crystal or a polycrystalline plate is filled with vapor heated to between 1600°C and 2100°C-- changes to this environment can affect the gas phase stoichiometry. The source-to-crystal distance is kept between 0.02-0.03mm (very low). Parameters that can affect crystal growth include source-to-substrate distance, temperature gradient, and the presence of tantalum for gathering excess carbon. High growth rates are the result of small source-to-seed distances combined with a large heat flux onto a small amount of source material with no more than a moderate temperature difference between the substrate and the source (0.5-10°C). The growth of large boules, however, remains quite difficult using this method, and it is better suited to the creation of epitaxial films with uniform polytype structures.[1] Ultimately, samples with a thickness of up to 500µm can be produced using this method.[2]
Referencesedit
^SiC Materials and Devices. Academic. 2 July 1998. p. 56. ISBN978-0-08-086450-1. Retrieved 12 July 2013.
^Safa Kasap; Peter Capper (1 January 2006). Springer Handbook of Electronic and Photonic Materials. Springer. p. 245. ISBN978-0-387-29185-7. Retrieved 12 July 2013.
Mokhov, E. et al.: “Growth of Silicon Carbide Bulk Crystals by the Sublimation Sandwich Method”, Elsevier Science S.A., 1997, pp. 317-323
April 12, 2024
sublimation, sandwich, method, sublimation, sandwich, method, also, called, sublimation, sandwich, process, sublimation, sandwich, technique, kind, physical, vapor, deposition, used, creating, made, crystals, silicon, carbide, most, common, crystal, grown, thi. The sublimation sandwich method also called the sublimation sandwich process and the sublimation sandwich technique is a kind of physical vapor deposition used for creating man made crystals Silicon carbide is the most common crystal grown this way though others crystals may also be created with it notably gallium nitride Si is silicon C is carbon SiC2 is silicon dicarbide Si2C is disilicon carbide Ar is gaseous argonIn this method the environment around a single crystal or a polycrystalline plate is filled with vapor heated to between 1600 C and 2100 C changes to this environment can affect the gas phase stoichiometry The source to crystal distance is kept between 0 02 0 03mm very low Parameters that can affect crystal growth include source to substrate distance temperature gradient and the presence of tantalum for gathering excess carbon High growth rates are the result of small source to seed distances combined with a large heat flux onto a small amount of source material with no more than a moderate temperature difference between the substrate and the source 0 5 10 C The growth of large boules however remains quite difficult using this method and it is better suited to the creation of epitaxial films with uniform polytype structures 1 Ultimately samples with a thickness of up to 500µm can be produced using this method 2 References edit SiC Materials and Devices Academic 2 July 1998 p 56 ISBN 978 0 08 086450 1 Retrieved 12 July 2013 Safa Kasap Peter Capper 1 January 2006 Springer Handbook of Electronic and Photonic Materials Springer p 245 ISBN 978 0 387 29185 7 Retrieved 12 July 2013 See also editLely method Czochralski process Mokhov E et al Growth of Silicon Carbide Bulk Crystals by the Sublimation Sandwich Method Elsevier Science S A 1997 pp 317 323 Retrieved from https en wikipedia org w index php title Sublimation sandwich method amp oldid 957232064, wikipedia, wiki, book, books, library,
