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Secondary ion mass spectrometry

January 29, 2023

Secondary-ion mass spectrometry (SIMS) is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions. The mass/charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental, isotopic, or molecular composition of the surface to a depth of 1 to 2 nm. Due to the large variation in ionization probabilities among elements sputtered from different materials, comparison against well-calibrated standards is necessary to achieve accurate quantitative results. SIMS is the most sensitive surface analysis technique, with elemental detection limits ranging from parts per million to parts per billion.

Secondary-ion mass spectrometry
Old magnetic sector SIMS, model IMS 3f, succeeded by the models 4f, 5f, 6f, 7f and most recently, 7f-Auto, launched in 2013 by the manufacturer CAMECA.
AcronymSIMS
ClassificationMass spectrometry
AnalytesSolid surfaces, thin films
Other techniques
RelatedFast atom bombardment
Microprobe

History

In 1910 British physicist J. J. Thomson observed a release of positive ions and neutral atoms from a solid surface induced by ion bombardment.[1] Improved vacuum pump technology in the 1940s enabled the first prototype experiments on SIMS by Herzog and Viehböck[2] in 1949, at the University of Vienna, Austria. In the mid-1950s Honig constructed a SIMS instrument at RCA Laboratories in Princeton, New Jersey.[3] Then in the early 1960s two SIMS instruments were developed independently. One was an American project, led by Liebel and Herzog, which was sponsored by NASA at GCA Corp, Massachusetts, for analyzing moon rocks,[4] the other at the University of Paris-Sud in Orsay by R. Castaing for the PhD thesis of G. Slodzian.[5] These first instruments were based on a magnetic double focusing sector field mass spectrometer and used argon for the primary beam ions. In the 1970s, K. Wittmaack and C. Magee developed SIMS instruments equipped with quadrupole mass analyzers.[6][7] Around the same time, A. Benninghoven introduced the method of static SIMS, where the primary ion current density is so small that only a negligible fraction (typically 1%) of the first surface layer is necessary for surface analysis.[8] Instruments of this type use pulsed primary ion sources and time-of-flight mass spectrometers and were developed by Benninghoven, Niehuis and Steffens at the University of Münster, Germany and also by Charles Evans & Associates. The Castaing and Slodzian design was developed in the 1960s by the French company CAMECA S.A.S. and used in materials science and surface science.[citation needed] Recent developments are focusing on novel primary ion species like C60+, ionized clusters of gold and bismuth,[9] or large gas cluster ion beams (e.g., Ar700+).[10] The sensitive high-resolution ion microprobe (SHRIMP) is a large-diameter, double-focusing SIMS sector instrument based on the Liebl and Herzog design, and produced by Australian Scientific Instruments in Canberra, Australia.[citation needed]

Instrumentation

 
Schematic of a typical dynamic SIMS instrument. High energy (usually several keV) ions are supplied by an ion gun (1 or 2) and focused on to the target sample (3), which ionizes and sputters some atoms off the surface (4). These secondary ions are then collected by ion lenses (5) and filtered according to atomic mass (6), then projected onto an electron multiplier (7, top), Faraday cup (7, bottom), or CCD screen (8).

A secondary ion mass spectrometer consists of (1) a primary ion gun generating the primary ion beam, (2) a primary ion column, accelerating and focusing the beam onto the sample (and in some devices an opportunity to separate the primary ion species by Wien filter or to pulse the beam), (3) high vacuum sample chamber holding the sample and the secondary ion extraction lens, (4) a mass analyser separating the ions according to their mass-to-charge ratio, and (5) a detector.

Vacuum

SIMS requires a high vacuum with pressures below 10−4 Pa (roughly 10−6 mbar or torr). This is needed to ensure that secondary ions do not collide with background gases on their way to the detector (i.e. the mean free path of gas molecules within the detector must be large compared to the size of the instrument), and it also limits surface contamination by adsorption of background gas particles during measurement.

Primary ion source

Three types of ion guns are employed. In one, ions of gaseous elements are usually generated with duoplasmatrons or by electron ionization, for instance noble gases (40Ar+, Xe+), oxygen (16O−, 16O2+, 16O2−), or even ionized molecules such as SF5+ (generated from SF6) or C60+ (fullerene). This type of ion gun is easy to operate and generates roughly focused but high current ion beams. A second source type, the surface ionization source, generates 133Cs+ primary ions.[11] Cesium atoms vaporize through a porous tungsten plug and are ionized during evaporation. Depending on the gun design, fine focus or high current can be obtained. A third source type, the liquid metal ion gun (LMIG), operates with metals or metallic alloys, which are liquid at room temperature or slightly above. The liquid metal covers a tungsten tip and emits ions under influence of an intense electric field. While a gallium source is able to operate with elemental gallium, recently developed sources for gold, indium and bismuth use alloys which lower their melting points. The LMIG provides a tightly focused ion beam (<50 nm) with moderate intensity and is additionally able to generate short pulsed ion beams. It is therefore commonly used in static SIMS devices.

The choice of the ion species and ion gun respectively depends on the required current (pulsed or continuous), the required beam dimensions of the primary ion beam and on the sample which is to be analyzed. Oxygen primary ions are often used to investigate electropositive elements due to an increase of the generation probability of positive secondary ions, while caesium primary ions often are used when electronegative elements are being investigated. For short pulsed ion beams in static SIMS, LMIGs are most often deployed for analysis; they can be combined with either an oxygen gun or a caesium gun during elemental depth profiling, or with a C60+ or gas cluster ion source during molecular depth profiling.

Mass analyzer

Depending on the SIMS type, there are three basic analyzers available: sector, quadrupole, and time-of-flight. A sector field mass spectrometer uses a combination of an electrostatic analyzer and a magnetic analyzer to separate the secondary ions by their mass-to-charge ratio. A quadrupole mass analyzer separates the masses by resonant electric fields, which allow only the selected masses to pass through. The time of flight mass analyzer separates the ions in a field-free drift path according to their velocity. Since all ions possess the same kinetic energy the velocity and therefore time of flight varies according to mass. It requires pulsed secondary ion generation using either a pulsed primary ion gun or a pulsed secondary ion extraction. It is the only analyzer type able to detect all generated secondary ions simultaneously, and is the standard analyzer for static SIMS instruments.

Detector

A Faraday cup measures the ion current hitting a metal cup, and is sometimes used for high current secondary ion signals. With an electron multiplier an impact of a single ion starts off an electron cascade, resulting in a pulse of 108 electrons which is recorded directly. A microchannel plate detector is similar to an electron multiplier, with lower amplification factor but with the advantage of laterally-resolved detection. Usually it is combined with a fluorescent screen, and signals are recorded either with a CCD-camera or with a fluorescence detector.

Detection limits and sample degradation

Detection limits for most trace elements are between 1012 and 1016 atoms per cubic centimetre,[12] depending on the type of instrumentation used, the primary ion beam used and the analytical area, and other factors. Samples as small as individual pollen grains and microfossils can yield results by this technique.[13]

The amount of surface cratering created by the process depends on the current (pulsed or continuous) and dimensions of the primary ion beam. While only charged secondary ions emitted from the material surface through the sputtering process are used to analyze the chemical composition of the material, these represent a small fraction of the particles emitted from the sample.

Static and dynamic modes

In the field of surface analysis, it is usual to distinguish static SIMS and dynamic SIMS. Static SIMS is the process involved in surface atomic monolayer analysis, or surface molecular analysis, usually with a pulsed ion beam and a time of flight mass spectrometer, while dynamic SIMS is the process involved in bulk analysis, closely related to the sputtering process, using a DC primary ion beam and a magnetic sector or quadrupole mass spectrometer.

Dynamic secondary ion mass spectrometry (DSIMS) is a powerful tool for characterizing surfaces, including the elemental, molecular, and isotopic composition and can be used to study the structure of thin films, the composition of polymers, and the surface chemistry of catalysts. DSIMS was developed by John B. Fenn and Koichi Tanaka in the early 1980s. DSIMS is mainly used by the semiconductor industry.

Applications

The COSIMA instrument onboard Rosetta was the first[14] instrument to determine the composition of cometary dust in situ with secondary ion mass spectrometry during the spacecraft's 2014–2016 close approaches to comet 67P/Churyumov–Gerasimenko.

SIMS is used for quality assurance purposes in the semiconductor industry[15] and for the characterization of natural samples from this planet and others.[16] More recently, this technique is being applied to nuclear forensics.

SIMS can be used in the forensics field to develop fingerprints. Since SIMS is a vacuum based method, it is necessary to determine the order of usage along with other methods of analysis for fingerprints. This is because the mass of the fingerprint significantly decreases after exposure to vacuum conditions.[17]

See also

Citations

  1. ^ Thomson, J. J. (1910). "Rays of positive electricity". Phil. Mag. 20 (118): 752–767. doi:10.1080/14786441008636962.
  2. ^ Herzog, R. F. K., Viehboeck, F. (1949). "Ion source for mass spectrography". Phys. Rev. 76 (6): 855–856. Bibcode:1949PhRv...76..855H. doi:10.1103/PhysRev.76.855.{{cite journal}}: CS1 maint: multiple names: authors list (link)
  3. ^ Honig, R. E. (1958). "Sputtering of surfaces by positive ion beams of low energy". J. Appl. Phys. 29 (3): 549–555. Bibcode:1958JAP....29..549H. doi:10.1063/1.1723219.
  4. ^ Liebl, H. J. (1967). "Ion microprobe mass analyzer". J. Appl. Phys. 38 (13): 5277–5280. Bibcode:1967JAP....38.5277L. doi:10.1063/1.1709314.
  5. ^ Castaing, R. & Slodzian, G. J. (1962). "Optique corpusculaire—premiers essais de microanalyse par emission ionique secondaire". Microscopie. 1: 395–399.
  6. ^ Wittmaack, K. (1975). "Pre-equilibrium variation of secondary ion yield". Int. J. Mass Spectrom. Ion Phys. 17 (1): 39–50. Bibcode:1975IJMSI..17...39W. doi:10.1016/0020-7381(75)80005-2.
  7. ^ Magee, C. W.; Honig, Richard E. (1978). "Secondary ion quadrupole mass spectrometer for depth profiling design and performance evaluation". Review of Scientific Instruments. 49 (4): 477–485. Bibcode:1978RScI...49..477M. doi:10.1063/1.1135438. PMID 18699129.
  8. ^ Benninghoven, A (1969). "Analysis of sub-monolayers on silver by secondary ion emission". Physica Status Solidi. 34 (2): K169–171. Bibcode:1969PSSBR..34..169B. doi:10.1002/pssb.19690340267.
  9. ^ S. Hofmann (2004). "Sputter-depth profiling for thin-film analysis". Phil. Trans. R. Soc. Lond. A. 362 (1814): 55–75. Bibcode:2004RSPTA.362...55H. doi:10.1098/rsta.2003.1304. PMID 15306276.
  10. ^ S. Ninomiya; K. Ichiki; H. Yamada; Y. Nakata; T. Seki; T. Aoki; J. Matsuo (2009). "Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams". Rapid Commun. Mass Spectrom. 23 (11): 1601–1606. Bibcode:2009RCMS...23.1601N. doi:10.1002/rcm.4046. PMID 19399762.
  11. ^ "Cesium Ion Gun System for CAMECA SIMS Units". www.peabody-scientific.com/. Retrieved 8 November 2013.
  12. ^ "SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions" (PDF). Evans Analytical Group. May 4, 2007. Retrieved 2007-11-22.
  13. ^ Kaufman, A.J.; Xiao, S. (2003). "High CO2 levels in the Proterozoic atmosphere estimated from analyses of individual microfossils". Nature. 425 (6955): 279–282. Bibcode:2003Natur.425..279K. doi:10.1038/nature01902. PMID 13679912.
  14. ^ C. Engrand; J. Kissel; F. R. Krueger; P. Martin; J. Silén; L. Thirkell; R. Thomas; K. Varmuza (2006). "Chemometric evaluation of time-of-flight secondary ion mass spectrometry data of minerals in the frame of future in situ analyses of cometary's material by COSIMA onboard ROSETTA". Rapid Communications in Mass Spectrometry. 20 (8): 1361–1368. Bibcode:2006RCMS...20.1361E. doi:10.1002/rcm.2448. PMID 16555371.
  15. ^ "Testing & Characterization". Lucideon. Retrieved 2017-02-28.
  16. ^ "NERC Ion Mirco-Probe Facility". The University of Edinburgh: School of Geosciences. Retrieved 2017-02-28.
  17. ^ "Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions". Forensic Science International. 230 (1–3): 81–86. 2013-07-10. doi:10.1016/j.forsciint.2013.03.047. ISSN 0379-0738.

General bibliography

  • Benninghoven, A., Rüdenauer, F. G., Werner, H. W., Secondary Ion Mass Spectrometry: Basic Concepts, Instrumental Aspects, Applications, and Trends, Wiley, New York, 1987 (1227 pages), ISBN 0-471-51945-6
  • Vickerman, J. C., Brown, A., Reed, N. M., Secondary Ion Mass Spectrometry: Principles and Applications, Clarendon Press, Oxford, 1989 (341 pages), ISBN 0-19-855625-X
  • Wilson, R. G., Stevie, F. A., Magee, C. W., Secondary Ion Mass Spectrometry: A Practical Handbook for Depth Profiling and Bulk Impurity Analysis, John Wiley & Sons, New York, 1989, ISBN 0-471-51945-6
  • Vickerman, J. C., Briggs, D., ToF-SIMS: Surface Analysis by Mass Spectrometry', IM Publications, Chichester UK and SurfaceSpectra, Manchester, UK, 2001 (789 pages), ISBN 1-901019-03-9
  • Bubert, H., Jenett, H., 'Surface and Thin Film Analysis: A Compendium of Principles, Instrumentation, and Applications, pp. 86–121, Wiley-VCH, Weinheim, Germany, 2002, ISBN 3-527-30458-4

External links

  • Tutorial pages for SIMS theory and instrumentation

January 29, 2023
secondary, mass, spectrometry, secondary, mass, spectrometry, sims, technique, used, analyze, composition, solid, surfaces, thin, films, sputtering, surface, specimen, with, focused, primary, beam, collecting, analyzing, ejected, secondary, ions, mass, charge,. Secondary ion mass spectrometry SIMS is a technique used to analyze the composition of solid surfaces and thin films by sputtering the surface of the specimen with a focused primary ion beam and collecting and analyzing ejected secondary ions The mass charge ratios of these secondary ions are measured with a mass spectrometer to determine the elemental isotopic or molecular composition of the surface to a depth of 1 to 2 nm Due to the large variation in ionization probabilities among elements sputtered from different materials comparison against well calibrated standards is necessary to achieve accurate quantitative results SIMS is the most sensitive surface analysis technique with elemental detection limits ranging from parts per million to parts per billion Secondary ion mass spectrometryOld magnetic sector SIMS model IMS 3f succeeded by the models 4f 5f 6f 7f and most recently 7f Auto launched in 2013 by the manufacturer CAMECA AcronymSIMSClassificationMass spectrometryAnalytesSolid surfaces thin filmsOther techniquesRelatedFast atom bombardmentMicroprobe Contents 1 History 2 Instrumentation 2 1 Vacuum 2 2 Primary ion source 2 3 Mass analyzer 2 4 Detector 3 Detection limits and sample degradation 4 Static and dynamic modes 5 Applications 6 See also 7 Citations 8 General bibliography 9 External linksHistory EditIn 1910 British physicist J J Thomson observed a release of positive ions and neutral atoms from a solid surface induced by ion bombardment 1 Improved vacuum pump technology in the 1940s enabled the first prototype experiments on SIMS by Herzog and Viehbock 2 in 1949 at the University of Vienna Austria In the mid 1950s Honig constructed a SIMS instrument at RCA Laboratories in Princeton New Jersey 3 Then in the early 1960s two SIMS instruments were developed independently One was an American project led by Liebel and Herzog which was sponsored by NASA at GCA Corp Massachusetts for analyzing moon rocks 4 the other at the University of Paris Sud in Orsay by R Castaing for the PhD thesis of G Slodzian 5 These first instruments were based on a magnetic double focusing sector field mass spectrometer and used argon for the primary beam ions In the 1970s K Wittmaack and C Magee developed SIMS instruments equipped with quadrupole mass analyzers 6 7 Around the same time A Benninghoven introduced the method of static SIMS where the primary ion current density is so small that only a negligible fraction typically 1 of the first surface layer is necessary for surface analysis 8 Instruments of this type use pulsed primary ion sources and time of flight mass spectrometers and were developed by Benninghoven Niehuis and Steffens at the University of Munster Germany and also by Charles Evans amp Associates The Castaing and Slodzian design was developed in the 1960s by the French company CAMECA S A S and used in materials science and surface science citation needed Recent developments are focusing on novel primary ion species like C60 ionized clusters of gold and bismuth 9 or large gas cluster ion beams e g Ar700 10 The sensitive high resolution ion microprobe SHRIMP is a large diameter double focusing SIMS sector instrument based on the Liebl and Herzog design and produced by Australian Scientific Instruments in Canberra Australia citation needed Instrumentation Edit Schematic of a typical dynamic SIMS instrument High energy usually several keV ions are supplied by an ion gun 1 or 2 and focused on to the target sample 3 which ionizes and sputters some atoms off the surface 4 These secondary ions are then collected by ion lenses 5 and filtered according to atomic mass 6 then projected onto an electron multiplier 7 top Faraday cup 7 bottom or CCD screen 8 A secondary ion mass spectrometer consists of 1 a primary ion gun generating the primary ion beam 2 a primary ion column accelerating and focusing the beam onto the sample and in some devices an opportunity to separate the primary ion species by Wien filter or to pulse the beam 3 high vacuum sample chamber holding the sample and the secondary ion extraction lens 4 a mass analyser separating the ions according to their mass to charge ratio and 5 a detector Vacuum Edit SIMS requires a high vacuum with pressures below 10 4 Pa roughly 10 6 mbar or torr This is needed to ensure that secondary ions do not collide with background gases on their way to the detector i e the mean free path of gas molecules within the detector must be large compared to the size of the instrument and it also limits surface contamination by adsorption of background gas particles during measurement Primary ion source Edit Three types of ion guns are employed In one ions of gaseous elements are usually generated with duoplasmatrons or by electron ionization for instance noble gases 40Ar Xe oxygen 16O 16O2 16O2 or even ionized molecules such as SF5 generated from SF6 or C60 fullerene This type of ion gun is easy to operate and generates roughly focused but high current ion beams A second source type the surface ionization source generates 133Cs primary ions 11 Cesium atoms vaporize through a porous tungsten plug and are ionized during evaporation Depending on the gun design fine focus or high current can be obtained A third source type the liquid metal ion gun LMIG operates with metals or metallic alloys which are liquid at room temperature or slightly above The liquid metal covers a tungsten tip and emits ions under influence of an intense electric field While a gallium source is able to operate with elemental gallium recently developed sources for gold indium and bismuth use alloys which lower their melting points The LMIG provides a tightly focused ion beam lt 50 nm with moderate intensity and is additionally able to generate short pulsed ion beams It is therefore commonly used in static SIMS devices The choice of the ion species and ion gun respectively depends on the required current pulsed or continuous the required beam dimensions of the primary ion beam and on the sample which is to be analyzed Oxygen primary ions are often used to investigate electropositive elements due to an increase of the generation probability of positive secondary ions while caesium primary ions often are used when electronegative elements are being investigated For short pulsed ion beams in static SIMS LMIGs are most often deployed for analysis they can be combined with either an oxygen gun or a caesium gun during elemental depth profiling or with a C60 or gas cluster ion source during molecular depth profiling Mass analyzer Edit Depending on the SIMS type there are three basic analyzers available sector quadrupole and time of flight A sector field mass spectrometer uses a combination of an electrostatic analyzer and a magnetic analyzer to separate the secondary ions by their mass to charge ratio A quadrupole mass analyzer separates the masses by resonant electric fields which allow only the selected masses to pass through The time of flight mass analyzer separates the ions in a field free drift path according to their velocity Since all ions possess the same kinetic energy the velocity and therefore time of flight varies according to mass It requires pulsed secondary ion generation using either a pulsed primary ion gun or a pulsed secondary ion extraction It is the only analyzer type able to detect all generated secondary ions simultaneously and is the standard analyzer for static SIMS instruments Detector Edit A Faraday cup measures the ion current hitting a metal cup and is sometimes used for high current secondary ion signals With an electron multiplier an impact of a single ion starts off an electron cascade resulting in a pulse of 108 electrons which is recorded directly A microchannel plate detector is similar to an electron multiplier with lower amplification factor but with the advantage of laterally resolved detection Usually it is combined with a fluorescent screen and signals are recorded either with a CCD camera or with a fluorescence detector Detection limits and sample degradation EditDetection limits for most trace elements are between 1012 and 1016 atoms per cubic centimetre 12 depending on the type of instrumentation used the primary ion beam used and the analytical area and other factors Samples as small as individual pollen grains and microfossils can yield results by this technique 13 The amount of surface cratering created by the process depends on the current pulsed or continuous and dimensions of the primary ion beam While only charged secondary ions emitted from the material surface through the sputtering process are used to analyze the chemical composition of the material these represent a small fraction of the particles emitted from the sample Static and dynamic modes EditIn the field of surface analysis it is usual to distinguish static SIMS and dynamic SIMS Static SIMS is the process involved in surface atomic monolayer analysis or surface molecular analysis usually with a pulsed ion beam and a time of flight mass spectrometer while dynamic SIMS is the process involved in bulk analysis closely related to the sputtering process using a DC primary ion beam and a magnetic sector or quadrupole mass spectrometer Dynamic secondary ion mass spectrometry DSIMS is a powerful tool for characterizing surfaces including the elemental molecular and isotopic composition and can be used to study the structure of thin films the composition of polymers and the surface chemistry of catalysts DSIMS was developed by John B Fenn and Koichi Tanaka in the early 1980s DSIMS is mainly used by the semiconductor industry Applications EditThe COSIMA instrument onboard Rosetta was the first 14 instrument to determine the composition of cometary dust in situ with secondary ion mass spectrometry during the spacecraft s 2014 2016 close approaches to comet 67P Churyumov Gerasimenko SIMS is used for quality assurance purposes in the semiconductor industry 15 and for the characterization of natural samples from this planet and others 16 More recently this technique is being applied to nuclear forensics SIMS can be used in the forensics field to develop fingerprints Since SIMS is a vacuum based method it is necessary to determine the order of usage along with other methods of analysis for fingerprints This is because the mass of the fingerprint significantly decreases after exposure to vacuum conditions 17 See also EditNanoSIMSCitations Edit Thomson J J 1910 Rays of positive electricity Phil Mag 20 118 752 767 doi 10 1080 14786441008636962 Herzog R F K Viehboeck F 1949 Ion source for mass spectrography Phys Rev 76 6 855 856 Bibcode 1949PhRv 76 855H doi 10 1103 PhysRev 76 855 a href Template Cite journal html title Template Cite journal cite journal a CS1 maint multiple names authors list link Honig R E 1958 Sputtering of surfaces by positive ion beams of low energy J Appl Phys 29 3 549 555 Bibcode 1958JAP 29 549H doi 10 1063 1 1723219 Liebl H J 1967 Ion microprobe mass analyzer J Appl Phys 38 13 5277 5280 Bibcode 1967JAP 38 5277L doi 10 1063 1 1709314 Castaing R amp Slodzian G J 1962 Optique corpusculaire premiers essais de microanalyse par emission ionique secondaire Microscopie 1 395 399 Wittmaack K 1975 Pre equilibrium variation of secondary ion yield Int J Mass Spectrom Ion Phys 17 1 39 50 Bibcode 1975IJMSI 17 39W doi 10 1016 0020 7381 75 80005 2 Magee C W Honig Richard E 1978 Secondary ion quadrupole mass spectrometer for depth profiling design and performance evaluation Review of Scientific Instruments 49 4 477 485 Bibcode 1978RScI 49 477M doi 10 1063 1 1135438 PMID 18699129 Benninghoven A 1969 Analysis of sub monolayers on silver by secondary ion emission Physica Status Solidi 34 2 K169 171 Bibcode 1969PSSBR 34 169B doi 10 1002 pssb 19690340267 S Hofmann 2004 Sputter depth profiling for thin film analysis Phil Trans R Soc Lond A 362 1814 55 75 Bibcode 2004RSPTA 362 55H doi 10 1098 rsta 2003 1304 PMID 15306276 S Ninomiya K Ichiki H Yamada Y Nakata T Seki T Aoki J Matsuo 2009 Precise and fast secondary ion mass spectrometry depth profiling of polymer materials with large Ar cluster ion beams Rapid Commun Mass Spectrom 23 11 1601 1606 Bibcode 2009RCMS 23 1601N doi 10 1002 rcm 4046 PMID 19399762 Cesium Ion Gun System for CAMECA SIMS Units www peabody scientific com Retrieved 8 November 2013 SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions PDF Evans Analytical Group May 4 2007 Retrieved 2007 11 22 Kaufman A J Xiao S 2003 High CO2 levels in the Proterozoic atmosphere estimated from analyses of individual microfossils Nature 425 6955 279 282 Bibcode 2003Natur 425 279K doi 10 1038 nature01902 PMID 13679912 C Engrand J Kissel F R Krueger P Martin J Silen L Thirkell R Thomas K Varmuza 2006 Chemometric evaluation of time of flight secondary ion mass spectrometry data of minerals in the frame of future in situ analyses of cometary s material by COSIMA onboard ROSETTA Rapid Communications in Mass Spectrometry 20 8 1361 1368 Bibcode 2006RCMS 20 1361E doi 10 1002 rcm 2448 PMID 16555371 Testing amp Characterization Lucideon Retrieved 2017 02 28 NERC Ion Mirco Probe Facility The University of Edinburgh School of Geosciences Retrieved 2017 02 28 Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions Forensic Science International 230 1 3 81 86 2013 07 10 doi 10 1016 j forsciint 2013 03 047 ISSN 0379 0738 General bibliography EditBenninghoven A Rudenauer F G Werner H W Secondary Ion Mass Spectrometry Basic Concepts Instrumental Aspects Applications and Trends Wiley New York 1987 1227 pages ISBN 0 471 51945 6 Vickerman J C Brown A Reed N M Secondary Ion Mass Spectrometry Principles and Applications Clarendon Press Oxford 1989 341 pages ISBN 0 19 855625 X Wilson R G Stevie F A Magee C W Secondary Ion Mass Spectrometry A Practical Handbook for Depth Profiling and Bulk Impurity Analysis John Wiley amp Sons New York 1989 ISBN 0 471 51945 6 Vickerman J C Briggs D ToF SIMS Surface Analysis by Mass Spectrometry IM Publications Chichester UK and SurfaceSpectra Manchester UK 2001 789 pages ISBN 1 901019 03 9 Bubert H Jenett H Surface and Thin Film Analysis A Compendium of Principles Instrumentation and Applications pp 86 121 Wiley VCH Weinheim Germany 2002 ISBN 3 527 30458 4External links EditTutorial pages for SIMS theory and instrumentation Retrieved from https en wikipedia org w index php title Secondary ion mass spectrometry amp oldid 1125740914, wikipedia, wiki, book, books, library,

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