Optical beam induced current (OBIC) is a semiconductor analysis technique performed using laser signal injection. The technique uses a scanning laser beam to create electron–hole pairs in a semiconductor sample. This induces a current which may be analyzed to determine the sample's properties, especially defects or anomalies.
Conventional OBIC scans an ultrafast laser beam over the surface of the sample, exciting some electrons into the conduction band through what is known as 'single-photon absorption'. As its name implies, single-photon absorption involves just a single photon to excite the electron into conduction. This can only occur if that single photon carries enough energy to overcome the band gap of the semiconductor (1.12 eV for Si) and provide the electron with enough energy to make it jump into the conduction band.
The technique is used in semiconductor failure analysis to locate buried diffusion regions, damaged junctions and gate oxide shorts.[1]
The OBIC technique may be used to detect the point at which a focused ion beam (FIB) milling operation in bulk silicon of an IC must be terminated (also known as endpoint). This is accomplished by using a laser to induce a photocurrent in the silicon while simultaneously monitoring the magnitude of the photocurrent by connecting an ammeter to the device's power and ground. As the bulk silicon is thinned, the photocurrent is increased and reaches a peak as the depletion region of the well to substrate junction is reached. This way, endpoint can be achieved to just below the well depth and the device remains operational.[2]
Antoniou, Nicholas (2004), "The Process of Editing Circuits Through the Bulk Silicon", Microelectronics Failure Analysis, Materials Park: ASM International, ISBN0-87170-804-3.
Further readingedit
Manfred Frischholz; Jörg Seidel; Adolf Schoner; Ulf Gustafsson; Mietek Bakowski; Kenneth Nordgren; Kurt Rottner (1998), "JTE concept evaluation and failure analysis: OBIC measurements on 4H Sic p+-n diodes", Proceedings of 1998 International Symposium on Power Semiconductor Devices & ICs, Kyoto: 391–394.
This technology-related article is a stub. You can help Wikipedia by expanding it.
optical, beam, induced, current, optical, beam, induced, current, obic, semiconductor, analysis, technique, performed, using, laser, signal, injection, technique, uses, scanning, laser, beam, create, electron, hole, pairs, semiconductor, sample, this, induces,. Optical beam induced current OBIC is a semiconductor analysis technique performed using laser signal injection The technique uses a scanning laser beam to create electron hole pairs in a semiconductor sample This induces a current which may be analyzed to determine the sample s properties especially defects or anomalies Conventional OBIC scans an ultrafast laser beam over the surface of the sample exciting some electrons into the conduction band through what is known as single photon absorption As its name implies single photon absorption involves just a single photon to excite the electron into conduction This can only occur if that single photon carries enough energy to overcome the band gap of the semiconductor 1 12 eV for Si and provide the electron with enough energy to make it jump into the conduction band Contents 1 Uses 2 See also 3 Notes 4 References 5 Further readingUses editThe technique is used in semiconductor failure analysis to locate buried diffusion regions damaged junctions and gate oxide shorts 1 The OBIC technique may be used to detect the point at which a focused ion beam FIB milling operation in bulk silicon of an IC must be terminated also known as endpoint This is accomplished by using a laser to induce a photocurrent in the silicon while simultaneously monitoring the magnitude of the photocurrent by connecting an ammeter to the device s power and ground As the bulk silicon is thinned the photocurrent is increased and reaches a peak as the depletion region of the well to substrate junction is reached This way endpoint can be achieved to just below the well depth and the device remains operational 2 See also editList of laser articlesNotes edit Cole 2004 p 411 Antoniou 2004 p 72References editCole Ed et al 2004 Beam Based Defect Localization Methods Microelectronics Failure Analysis Materials Park ASM International ISBN 0 87170 804 3 Antoniou Nicholas 2004 The Process of Editing Circuits Through the Bulk Silicon Microelectronics Failure Analysis Materials Park ASM International ISBN 0 87170 804 3 Further reading editManfred Frischholz Jorg Seidel Adolf Schoner Ulf Gustafsson Mietek Bakowski Kenneth Nordgren Kurt Rottner 1998 JTE concept evaluation and failure analysis OBIC measurements on 4H Sic p n diodes Proceedings of 1998 International Symposium on Power Semiconductor Devices amp ICs Kyoto 391 394 nbsp This technology related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title Optical beam induced current amp oldid 949092341, wikipedia, wiki, book, books, library,
