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Octiabr' Emelianenko

April 11, 2024

Octiabr' V. Emelianenko (7 November 1926, Leningrad - 27 May 2012, Saint Petersburg) was a Soviet physicist, Ph.D. in Physics and Mathematical Sciences. He did fundamental work in physics of III-V compound semiconductors, and made significant contributions to pave the way for the creation of the first semiconductor laser, optoelectronics, LEDs, solar cells, infrared detectors and other semiconductor devices.

Octiabr' V. Emelianenko
Born
Octiabr' Vasilievich Emelianenko

(1926-11-07)7 November 1926
Leningrad, USSR
Died25 May 2012(2012-05-25) (aged 85)
Saint Petersburg, Russian Federation
Alma materSaint Petersburg State University
Scientific career
FieldsPhysics
InstitutionsLeningrad Physico-Technical Institute

Biography edit

In 1945 he was called up for military service at the age of seventeen. Location Service - Eastern Front. After the Second World War was to re-enlist. While serving in the army in absentia received secondary and higher education. He graduated from the Physics Faculty of Saint Petersburg State University, enrolled in graduate school. From 1955 to 1989 he worked in the Laboratory of Semiconductor Nasledov D.(Ioffe Physical-Technical Institute of the Russian Academy of Sciences)

Scientific work edit

Studies of III–V compounds in the Soviet Union were started in the early 1950s at the Physical-Technical Institute, USSR Academy of Sciences. In 1950, N. Goryunovа and A. Regel opened their semiconducting properties of III-V compounds on the example of indium antimonide

In the 1950s only the laboratory of Professor Heinrich Welker in Germany, and laboratory Dmitriy N. Nasledov in the Ioffe Physical-Technical Institute, USSR Academy of Sciences were engaged in studies of III–V compounds. All scientists in the field of semiconductors concentrated almost exclusively on germanium and silicon. It seemed that these elemental semiconductors, which brought electronics to a new level, could not be surpassed by any compound semiconductor.

The first significant report on studies of III–V semi-conductors (InSb, InAs) at the Physical-Technical Institute was made by Nasledov at the First All-Union Conference on Semiconductors (Leningrad, 1956). He mentioned (among other phenomena) that neither electrical conductivity nor the Hall effect depend on temperature in new III–V compounds. Many scientists considered this observation strange and even accidental. However, it was found shortly afterwards that the above temperature independence is the consequence of profound degeneracy in the electron gas, which is typical of heavily doped (then, simply “impure”) III–V crystals. Fundamentally new phenomena in these crystals gave rise to a new field in the physics of semiconductors, specifically, the physics of heavily doped semiconductors. This researches was conducted group headed by O. Emelianenko in the laboratory D. Nasledov

A team led by O. Emelianenko continued fundamental research of phenomena transport in a wide class of III-V compounds (solid solutions and structures). The most interesting were: the study of the impurity band;[1][2] Later, discovery of giant magnetoresistance when driving vehicles on impurities;[3] the investigation of the metal–semiconductor transition in various materials compounds III–V, as well as the determination of the origin of negative (quantum) magnetoresistance (discovered by a team Emelianenko even earlier, in 1958).[4]

The results obtained by O. Emelianenko and his team are included in the modern understanding of semiconducting properties of compounds III-V.

References edit

  1. ^ O. V. Emel’yanenko, T. S. Lagunova, D. N. Nasledov, and G. N. Talalakin, Fiz. Tverd. Tela (Leningrad) 7, 1315 (1965) [Sov. Phys. Solid State 7, 1063 (1965)].
  2. ^ F. P. Kesamanly, É. É. Klotyn’sh, T. S. Lagunova, and D. Nasledov, Fiz. Tverd. Tela (Leningrad) 6, 958 (1964) [Sov. Phys. Solid State 6, 741 (1964)].
  3. ^ O. V. Emelianenko, T. S. Lagunova, D. N. Nasledov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 7, 1919 (1973) [Sov.Phys. Semicond. 7, 1280 (1973)].
  4. ^ T. I. Voronina, O. V. Emelianenko, T. S. Lagunova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 17, 1841 (1983) [Sov.Phys. Semicond. 17, 1174 (1983)].

Links edit

April 11, 2024
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Octiabr V Emelianenko 7 November 1926 Leningrad 27 May 2012 Saint Petersburg was a Soviet physicist Ph D in Physics and Mathematical Sciences He did fundamental work in physics of III V compound semiconductors and made significant contributions to pave the way for the creation of the first semiconductor laser optoelectronics LEDs solar cells infrared detectors and other semiconductor devices Octiabr V EmelianenkoBornOctiabr Vasilievich Emelianenko 1926 11 07 7 November 1926Leningrad USSRDied25 May 2012 2012 05 25 aged 85 Saint Petersburg Russian FederationAlma materSaint Petersburg State UniversityScientific careerFieldsPhysicsInstitutionsLeningrad Physico Technical Institute Contents 1 Biography 2 Scientific work 3 References 4 LinksBiography editIn 1945 he was called up for military service at the age of seventeen Location Service Eastern Front After the Second World War was to re enlist While serving in the army in absentia received secondary and higher education He graduated from the Physics Faculty of Saint Petersburg State University enrolled in graduate school From 1955 to 1989 he worked in the Laboratory of Semiconductor Nasledov D Ioffe Physical Technical Institute of the Russian Academy of Sciences Scientific work editStudies of III V compounds in the Soviet Union were started in the early 1950s at the Physical Technical Institute USSR Academy of Sciences In 1950 N Goryunova and A Regel opened their semiconducting properties of III V compounds on the example of indium antimonideIn the 1950s only the laboratory of Professor Heinrich Welker in Germany and laboratory Dmitriy N Nasledov in the Ioffe Physical Technical Institute USSR Academy of Sciences were engaged in studies of III V compounds All scientists in the field of semiconductors concentrated almost exclusively on germanium and silicon It seemed that these elemental semiconductors which brought electronics to a new level could not be surpassed by any compound semiconductor The first significant report on studies of III V semi conductors InSb InAs at the Physical Technical Institute was made by Nasledov at the First All Union Conference on Semiconductors Leningrad 1956 He mentioned among other phenomena that neither electrical conductivity nor the Hall effect depend on temperature in new III V compounds Many scientists considered this observation strange and even accidental However it was found shortly afterwards that the above temperature independence is the consequence of profound degeneracy in the electron gas which is typical of heavily doped then simply impure III V crystals Fundamentally new phenomena in these crystals gave rise to a new field in the physics of semiconductors specifically the physics of heavily doped semiconductors This researches was conducted group headed by O Emelianenko in the laboratory D NasledovA team led by O Emelianenko continued fundamental research of phenomena transport in a wide class of III V compounds solid solutions and structures The most interesting were the study of the impurity band 1 2 Later discovery of giant magnetoresistance when driving vehicles on impurities 3 the investigation of the metal semiconductor transition in various materials compounds III V as well as the determination of the origin of negative quantum magnetoresistance discovered by a team Emelianenko even earlier in 1958 4 The results obtained by O Emelianenko and his team are included in the modern understanding of semiconducting properties of compounds III V References edit O V Emel yanenko T S Lagunova D N Nasledov and G N Talalakin Fiz Tverd Tela Leningrad 7 1315 1965 Sov Phys Solid State 7 1063 1965 F P Kesamanly E E Klotyn sh T S Lagunova and D Nasledov Fiz Tverd Tela Leningrad 6 958 1964 Sov Phys Solid State 6 741 1964 O V Emelianenko T S Lagunova D N Nasledov et al Fiz Tekh Poluprovodn Leningrad 7 1919 1973 Sov Phys Semicond 7 1280 1973 T I Voronina O V Emelianenko T S Lagunova et al Fiz Tekh Poluprovodn Leningrad 17 1841 1983 Sov Phys Semicond 17 1174 1983 Links edithttps books google com books id r WzXVaKctIC amp dq GaAs Nasledov Emel E2 80 99yanenko amp pg PA468 http dn nasledov com nasledov pdf http library eltech ru cgi bin irbis64r 11 cgiirbis 64 exe LNG amp P21DBN GK amp I21DBN GK PRINT amp S21FMT fullw print amp C21COM F amp Z21MFN 27457 http www dissercat com content osobennosti rezistivnykh i galvanomagnitnykh yavlenii v anizotropnykh poluprovodnikakh http www issp ac ru ebooks disser Sergeev G S pdf http www dissercat com content vliyanie neravnovesnykh sostoyanii medi na fotoprovodimost fosfida galliya http www dissercat com content vliyanie elektricheskogo polya na magnitosoprotivlenie germaniya i armenida galliya Retrieved from https en wikipedia org w index php title Octiabr 27 Emelianenko amp oldid 1190615925, wikipedia, wiki, book, books, library,

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