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KOMDIV-32

April 12, 2024

The KOMDIV-32 (Russian: КОМДИВ-32) is a family of 32-bit microprocessors developed and manufactured by the Scientific Research Institute of System Development (NIISI) of the Russian Academy of Sciences.[1][2] The manufacturing plant of NIISI is located in Dubna on the grounds of the Kurchatov Institute.[3] The KOMDIV-32 processors are intended primarily for spacecraft applications and many of them are radiation hardened (rad-hard).

KOMDIV-32
General information
Launched1999; 25 years ago (1999)
Designed byNIISI
Common manufacturer(s)
  • NIISI
  • Mikron
  • MVC Nizhny Novgorod
Performance
Max. CPU clock rate33 MHz to 125 MHz
Architecture and classification
Technology node0.25 µm to 0.5 µm
Instruction setMIPS I
Physical specifications
Cores
  • 1

These microprocessors are compatible with MIPS R3000 and have an integrated MIPS R3010 compatible floating-point unit.[4]

Overview edit

Designation Production start (year) Process (nm) Clock rate (MHz) Remarks
Russian English
1В812 1V812 ? 500 33 [5]
1890ВМ1Т 1890VM1T 2000 500 50 rad-hard[4][6][7][8]
1890ВМ2Т 1890VM2T 2003 350 90 [4][6][7][8][9]
1990ВМ2Т 1990VM2T 2008 ? 350 66 rad-hard[4][6][7][10]
5890ВМ1Т 5890VM1Т 2009 500 33 rad-hard[4][6][7][8][11]
5890ВЕ1Т 5890VE1Т 2009 500 33 rad-hard[4][6][7][8][11][12]
1900ВМ2Т 1900VM2T 2012 350 66 rad-hard[4][6][7][8][11][12]
1904ВЕ1Т 1904VE1T 2016 350 40 [6][13]
1907ВМ014 1907VM014 2016 250 100 rad-hard[4][6][8]
1907ВМ038 1907VM038 2016 ? 250 125 rad-hard[4][6][10][14][15][16]
1907ВМ044 1907VM044 2016 ? 250 66 rad-hard[4][6][8][14][15][17]
1907ВМ056 1907VM056 2016 ? 250 100 rad-hard[4][6][8][14][15]
1907ВМ066 1907VM066 2016 ? 250 100 rad-hard[4][6][8][14][15]
1907ВК016 1907VK016 ? 250 100 rad-hard[4][8][14][15]

Details edit

1V812 edit

  • 0.5 µm CMOS process, 3-layer metal
  • 108-pin ceramic Quad Flat Package (QFP)
  • 1.5 million transistors, 8KB L1 instruction cache, 8KB L1 data cache, compatible with IDT 79R3081E

1890VM1T edit

  • 0.5 µm CMOS process

1890VM2T edit

  • 0.35 µm CMOS process

1990VM2T edit

5890VM1Т edit

5890VE1Т edit

  • 0.5 µm SOI CMOS process
  • 240-pin ceramic QFP
  • radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 °C
  • System-on-a-chip (SoC) including PCI master / slave, 16 GPIO, 3 UART, 3 32-bit timers
  • cache (8KB each for data and instructions)
  • second-sourced by MVC Nizhny Novgorod under the name 1904VE1T (Russian: 1904ВЕ1Т) with a clock rate of 40 MHz

1900VM2T edit

  • development name Rezerv-32
  • 0.35 µm SOI CMOS process
  • 108-pin ceramic QFP
  • radiation tolerance to not less than 200 kRad, working temperature from -60 to 125 °C
  • triple modular redundancy on block level with self-healing
  • both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE)

1907VM014 edit

  • 0.25 µm SOI CMOS process; manufacturing to be moved to Mikron
  • 256-pin ceramic QFP
  • production planned for 2016 (previously this device was planned to go into production in 2014 under the name 1907VE1T or 1907VM1T)[12]
  • radiation tolerance to not less than 200 kRad
  • SoC including SpaceWire, GOST R 52070-2003 (Russian version of MIL-STD-1553), SPI, 32 GPIO, 2 UART, 3 timers, JTAG
  • cache (8KB each for data and instructions)

1907VM038 edit

1907VM044 edit

  • development name Obrabotka-10
  • 0.25 µm SOI CMOS process; manufactured by Mikron
  • 256-pin ceramic QFP
  • SoC including SpaceWire, GOST R 52070-2003 (MIL-STD-1553), SPI, 32 GPIO, 2 UART, 3 timers, JTAG
  • radiation tolerance to not less than 200 kRad
  • triple modular redundancy in processor core
  • both registers and cache (4KB each for data and instructions) are implemented as dual interlocked storage cells (DICE) with 1 parity bit per byte for cache and Hamming code for registers
  • SECDED for external memory
  • working temperature from -60 to 125 °C

1907VM056 edit

1907VM066 edit

1907VK016 edit

See also edit

References edit

  1. ^ "Отделение разработки вычислительных систем" [Computer systems development branch] (in Russian). Moscow: NIISI. Retrieved 9 September 2016.
  2. ^ "First Russian MIPS-Compatible Microprocessor". 22 December 2007. Retrieved 6 September 2016.
  3. ^ Шунков, Валерий (28 March 2014). "Российская микроэлектроника для космоса: кто и что производит" [Russian microelectronics for space applications: Who manufactures what] (in Russian). Geektimes. Retrieved 8 April 2017.
  4. ^ a b c d e f g h i j k l m "Разработка СБИС - Развитие микропроцессоров с архитектурой КОМДИВ" [VLSI development - Development of microprocessors using the KOMDIV architecture] (in Russian). Moscow: NIISI. Retrieved 6 September 2016.
  5. ^ [Single-chip microprocessor with MIPS architecture 1V812] (in Russian). Moscow: NIISI. Archived from the original on 21 July 2006. Retrieved 7 September 2016.
  6. ^ a b c d e f g h i j k l "Изделия отечественного производства" [Domestic products] (in Russian). Moscow: AO "ENPO SPELS". Retrieved 1 September 2016.
  7. ^ a b c d e f [Integrated circuits for computing devices, including microprocessors, microcomputers, digital signal processors, and controllers] (in Russian). Promelektronika VPK. Archived from the original on 28 March 2017. Retrieved 25 October 2017.
  8. ^ a b c d e f g h i j "Перспективные ЭВМ семейства БАГЕТ" [Future computers in the BAGET family] (PDF) (in Russian). Moscow: AO KB "Korund-M". 2017. Retrieved 1 April 2021.
  9. ^ "1890ВМ2Т" [1890VM2T] (PDF) (in Russian). Moscow: NIISI. Retrieved 9 September 2016.
  10. ^ a b Костарев, Иван Николаевич (28 January 2017). [Method for ensuring the fail-safe operation of FPGA in rocket and space applications] (in Russian). Moscow: Moscow Institute of Electronics and Mathematics. Archived from the original on 28 March 2017. Retrieved 11 February 2020.
  11. ^ a b c Osipenko, Pavel Nikolaevich (12 October 2011). [Aspects of the radiation resistance of integrated circuits] (PDF) (in Russian). Moscow: NIISI. Archived from the original (PDF) on 25 April 2012. Retrieved 7 September 2016.
  12. ^ a b c Osipenko, Pavel Nikolaevich (25 May 2012). "ИЗДЕЛИЯ НАУЧНО-ИССЛЕДОВАТЕЛЬСКОГО ИНСТИТУТА СИСТЕМНЫХ ИССЛЕДОВАНИЙ РАН ДЛЯ АЭРОКОСМИЧЕСКИХ ПРИЛОЖЕНИЙ" [ELECTRONIC COMPONENTS OF SCIENTIFIC RESEARCH INSTITUTE FOR SYSTEM ANALYSIS RAS FOR SPACE APPLICATION] (PDF). Scientific experiments on small satellites: apparatus, data collection and control, electronic components (in Russian). Tarusa. pp. 139–148. ISSN 2075-6836. Retrieved 7 September 2016.
  13. ^ [Microprocessors and microcontrollers] (in Russian). Nizhny Novgorod: MVC. 2014. Archived from the original on 10 March 2017. Retrieved 29 March 2018.
  14. ^ a b c d e Serdin, O.V. (2017). "The special radiation-hardened processors for new highly informative experiments in space". Journal of Physics: Conference Series. 798 (1): 012010. Bibcode:2017JPhCS.798a2010S. doi:10.1088/1742-6596/798/1/012010.
  15. ^ a b c d e Serdin, O.V. (13 October 2016). "The special radiation-hardened processors for new highly informative experiments in space" (PDF). Retrieved 5 April 2017.
  16. ^ "Микросхема 1907ВМ038" [Integrated circuit 1907VM038] (PDF) (in Russian). Moscow: NIISI. Retrieved 28 March 2017.
  17. ^ "Микросхема 1907ВМ044" [Integrated circuit 1907VM044] (PDF) (in Russian). Moscow: NIISI. Retrieved 3 April 2017.

April 12, 2024
komdiv, russian, КОМДИВ, family, microprocessors, developed, manufactured, scientific, research, institute, system, development, niisi, russian, academy, sciences, manufacturing, plant, niisi, located, dubna, grounds, kurchatov, institute, processors, intended. The KOMDIV 32 Russian KOMDIV 32 is a family of 32 bit microprocessors developed and manufactured by the Scientific Research Institute of System Development NIISI of the Russian Academy of Sciences 1 2 The manufacturing plant of NIISI is located in Dubna on the grounds of the Kurchatov Institute 3 The KOMDIV 32 processors are intended primarily for spacecraft applications and many of them are radiation hardened rad hard KOMDIV 32General informationLaunched1999 25 years ago 1999 Designed byNIISICommon manufacturer s NIISIMikronMVC Nizhny NovgorodPerformanceMax CPU clock rate33 MHz to 125 MHzArchitecture and classificationTechnology node0 25 µm to 0 5 µmInstruction setMIPS IPhysical specificationsCores1These microprocessors are compatible with MIPS R3000 and have an integrated MIPS R3010 compatible floating point unit 4 Contents 1 Overview 2 Details 2 1 1V812 2 2 1890VM1T 2 3 1890VM2T 2 4 1990VM2T 2 5 5890VM1T 2 6 5890VE1T 2 7 1900VM2T 2 8 1907VM014 2 9 1907VM038 2 10 1907VM044 2 11 1907VM056 2 12 1907VM066 2 13 1907VK016 3 See also 4 ReferencesOverview editDesignation Production start year Process nm Clock rate MHz RemarksRussian English1V812 1V812 500 33 5 1890VM1T 1890VM1T 2000 500 50 rad hard 4 6 7 8 1890VM2T 1890VM2T 2003 350 90 4 6 7 8 9 1990VM2T 1990VM2T 2008 350 66 rad hard 4 6 7 10 5890VM1T 5890VM1T 2009 500 33 rad hard 4 6 7 8 11 5890VE1T 5890VE1T 2009 500 33 rad hard 4 6 7 8 11 12 1900VM2T 1900VM2T 2012 350 66 rad hard 4 6 7 8 11 12 1904VE1T 1904VE1T 2016 350 40 6 13 1907VM014 1907VM014 2016 250 100 rad hard 4 6 8 1907VM038 1907VM038 2016 250 125 rad hard 4 6 10 14 15 16 1907VM044 1907VM044 2016 250 66 rad hard 4 6 8 14 15 17 1907VM056 1907VM056 2016 250 100 rad hard 4 6 8 14 15 1907VM066 1907VM066 2016 250 100 rad hard 4 6 8 14 15 1907VK016 1907VK016 250 100 rad hard 4 8 14 15 Details edit1V812 edit 0 5 µm CMOS process 3 layer metal 108 pin ceramic Quad Flat Package QFP 1 5 million transistors 8KB L1 instruction cache 8KB L1 data cache compatible with IDT 79R3081E1890VM1T edit 0 5 µm CMOS process1890VM2T edit 0 35 µm CMOS process1990VM2T edit 0 35 µm silicon on insulator SOI CMOS process 108 pin ceramic Quad Flat Package QFP working temperature from 60 to 125 C5890VM1T edit 0 5 µm silicon on insulator SOI CMOS process 108 pin ceramic Quad Flat Package QFP cache 8KB each for data and instructions working temperature from 60 to 125 C5890VE1T edit 0 5 µm SOI CMOS process 240 pin ceramic QFP radiation tolerance to not less than 200 kRad working temperature from 60 to 125 C System on a chip SoC including PCI master slave 16 GPIO 3 UART 3 32 bit timers cache 8KB each for data and instructions second sourced by MVC Nizhny Novgorod under the name 1904VE1T Russian 1904VE1T with a clock rate of 40 MHz1900VM2T edit development name Rezerv 32 0 35 µm SOI CMOS process 108 pin ceramic QFP radiation tolerance to not less than 200 kRad working temperature from 60 to 125 C triple modular redundancy on block level with self healing both registers and cache 4KB each for data and instructions are implemented as dual interlocked storage cells DICE 1907VM014 edit 0 25 µm SOI CMOS process manufacturing to be moved to Mikron 256 pin ceramic QFP production planned for 2016 previously this device was planned to go into production in 2014 under the name 1907VE1T or 1907VM1T 12 radiation tolerance to not less than 200 kRad SoC including SpaceWire GOST R 52070 2003 Russian version of MIL STD 1553 SPI 32 GPIO 2 UART 3 timers JTAG cache 8KB each for data and instructions 1907VM038 edit development name Skhema 10 0 25 µm SOI CMOS process manufacturing to be moved to Mikron 675 pin ceramic BGA SoC including SpaceWire GOST R 52070 2003 MIL STD 1553 RapidIO SPI I C 16 GPIO 2 UART 3 32 bit timers JTAG DSP same command set as DSP in 1890VM7Ya DDR2 SDRAM controller with ECC cache 8KB each for data and instructions working temperature from 60 to 125 C1907VM044 edit development name Obrabotka 10 0 25 µm SOI CMOS process manufactured by Mikron 256 pin ceramic QFP SoC including SpaceWire GOST R 52070 2003 MIL STD 1553 SPI 32 GPIO 2 UART 3 timers JTAG radiation tolerance to not less than 200 kRad triple modular redundancy in processor core both registers and cache 4KB each for data and instructions are implemented as dual interlocked storage cells DICE with 1 parity bit per byte for cache and Hamming code for registers SECDED for external memory working temperature from 60 to 125 C1907VM056 edit development name Skhema 23 0 25 µm SOI CMOS process manufactured by Mikron 407 pin ceramic PGA SoC including 8 channel SpaceWire GOST R 52070 2003 MIL STD 1553 SPI I C CAN bus 32 GPIO 2 UART 3 timers JTAG cache 8KB each for data and instructions 1907VM066 edit development name Obrabotka 26 0 25 µm silicon on insulator SOI CMOS process manufactured by Mikron 407 pin ceramic PGA SoC including 4 channel SpaceWire GOST R 52070 2003 MIL STD 1553 SPI I C RapidIO GPIO 2 UART 3 timers JTAG PCI co processor for image processing cache 8KB each for data and instructions 1907VK016 edit development name Obrabotka 29 0 25 µm silicon on insulator SOI CMOS process manufactured by Mikron PGA SoC including 4 channel SpaceWire GOST R 52070 2003 MIL STD 1553 SPI 32 GPIO 2 UART 3 timers 128KB SRAM triple modular redundancy in processor coreSee also editKOMDIV 64 64 bit MIPS processors developed by NIISI Mongoose V a 32 bit MIPS processor for spacecraft applications developed for NASA Soviet integrated circuit designationReferences edit Otdelenie razrabotki vychislitelnyh sistem Computer systems development branch in Russian Moscow NIISI Retrieved 9 September 2016 First Russian MIPS Compatible Microprocessor 22 December 2007 Retrieved 6 September 2016 Shunkov Valerij 28 March 2014 Rossijskaya mikroelektronika dlya kosmosa kto i chto proizvodit Russian microelectronics for space applications Who manufactures what in Russian Geektimes Retrieved 8 April 2017 a b c d e f g h i j k l m Razrabotka SBIS Razvitie mikroprocessorov s arhitekturoj KOMDIV VLSI development Development of microprocessors using the KOMDIV architecture in Russian Moscow NIISI Retrieved 6 September 2016 ODNOKRISTALNYJ MIKROPROCESSOR S ARHITEKTUROJ MIPS 1B812 Single chip microprocessor with MIPS architecture 1V812 in Russian Moscow NIISI Archived from the original on 21 July 2006 Retrieved 7 September 2016 a b c d e f g h i j k l Izdeliya otechestvennogo proizvodstva Domestic products in Russian Moscow AO ENPO SPELS Retrieved 1 September 2016 a b c d e f Mikroshemy vychislitelnyh sredstv vklyuchaya mikroprocessory mikroEVM cifrovye processory obrabotki signalov i kontrollery Integrated circuits for computing devices including microprocessors microcomputers digital signal processors and controllers in Russian Promelektronika VPK Archived from the original on 28 March 2017 Retrieved 25 October 2017 a b c d e f g h i j Perspektivnye EVM semejstva BAGET Future computers in the BAGET family PDF in Russian Moscow AO KB Korund M 2017 Retrieved 1 April 2021 1890VM2T 1890VM2T PDF in Russian Moscow NIISI Retrieved 9 September 2016 a b Kostarev Ivan Nikolaevich 28 January 2017 Metodika obespecheniya sboeustojchivosti PLIS dlya raketno kosmicheskogo primeneniya Method for ensuring the fail safe operation of FPGA in rocket and space applications in Russian Moscow Moscow Institute of Electronics and Mathematics Archived from the original on 28 March 2017 Retrieved 11 February 2020 a b c Osipenko Pavel Nikolaevich 12 October 2011 Aspekty radiacionnoj stojkosti integralnyh mikroshem Aspects of the radiation resistance of integrated circuits PDF in Russian Moscow NIISI Archived from the original PDF on 25 April 2012 Retrieved 7 September 2016 a b c Osipenko Pavel Nikolaevich 25 May 2012 IZDELIYa NAUChNO ISSLEDOVATELSKOGO INSTITUTA SISTEMNYH ISSLEDOVANIJ RAN DLYa AEROKOSMIChESKIH PRILOZhENIJ ELECTRONIC COMPONENTS OF SCIENTIFIC RESEARCH INSTITUTE FOR SYSTEM ANALYSIS RAS FOR SPACE APPLICATION PDF Scientific experiments on small satellites apparatus data collection and control electronic components in Russian Tarusa pp 139 148 ISSN 2075 6836 Retrieved 7 September 2016 Mikroprocessory i mikrokontrollery Microprocessors and microcontrollers in Russian Nizhny Novgorod MVC 2014 Archived from the original on 10 March 2017 Retrieved 29 March 2018 a b c d e Serdin O V 2017 The special radiation hardened processors for new highly informative experiments in space Journal of Physics Conference Series 798 1 012010 Bibcode 2017JPhCS 798a2010S doi 10 1088 1742 6596 798 1 012010 a b c d e Serdin O V 13 October 2016 The special radiation hardened processors for new highly informative experiments in space PDF Retrieved 5 April 2017 Mikroshema 1907VM038 Integrated circuit 1907VM038 PDF in Russian Moscow NIISI Retrieved 28 March 2017 Mikroshema 1907VM044 Integrated circuit 1907VM044 PDF in Russian Moscow NIISI Retrieved 3 April 2017 Retrieved from https en wikipedia org w index php title KOMDIV 32 amp oldid 1123338665, wikipedia, wiki, book, books, 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