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Wikipedia

BSIM

BSIM (Berkeley Short-channel IGFET Model)[1] refers to a family of MOSFET transistor models for integrated circuit design. It also refers to the BSIM group located in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, that develops these models. Accurate transistor models are needed for electronic circuit simulation, which in turn is needed for integrated circuit design. As the devices become smaller each process generation (see Moore's law), new models are needed to accurately reflect the transistor's behavior.

Commercial and industrial analog simulators (such as SPICE) have added many other device models as technology advanced and earlier models became inaccurate. To attempt standardization of these models so that a set of model parameters may be used in different simulators, an industry working group was formed, the Compact Model Coalition,[2] to choose, maintain, and promote the use of standard models. BSIM models, developed at UC Berkeley, are one of these standards. Other models supported by the council are , HICUM, and MEXTRAM 2014-12-28 at the Wayback Machine.

BSIM models edit

The transistor models developed and currently maintained by UC Berkeley are:

  • BSIM-CMG (Common Multi-Gate),[3]
  • BSIM-IMG (Independent Multi-Gate),[4] the only model published without source-code (whose publication is foreseen for July 13, 2021)
  • BSIM-SOI (Silicon-on-Insulator),[5]
  • BSIM-BULK,[6] formerly BSIM6,
  • BSIM4,[7] used for 0.13 μm to 20 nm nodes,
  • BSIM3,[8] a predecessor of BSIM4.

Original versions of BSIM models were written in the C programming language. All newer versions of the models, except BSIM4 and BSIM3, support only Verilog-A. For example, the last version of BSIM-SOI which supported C was the version BSIM-SOIv4.4.

References edit

  1. ^ Sheu, Scharfetter & Ko, Jeng (August 1987). "BSIM: Berkeley Short-Channel IGFET Model for MOS Transistors". IEEE Journal of Solid-State Circuits. SC-22 (4): 558–566. Bibcode:1987IJSSC..22..558S. doi:10.1109/JSSC.1987.1052773.
  2. ^ "Compact Model Coalition (CMC)". Si2.org.
  3. ^ "BSIM-CMG Model". BSIM Group, UC Berkeley.
  4. ^ "BSIM-IMG Model". BSIM Group, UC Berkeley.
  5. ^ "BSIM-SOI Model". BSIM Group, UC Berkeley.
  6. ^ "BSIM-BULK Model". BSIM Group, UC Berkeley.
  7. ^ "BSIM4 Model". BSIM Group, UC Berkeley.
  8. ^ "BSIM3 Model". BSIM Group, UC Berkeley.

See also edit

bsim, berkeley, short, channel, igfet, model, refers, family, mosfet, transistor, models, integrated, circuit, design, also, refers, group, located, department, electrical, engineering, computer, sciences, eecs, university, california, berkeley, that, develops. BSIM Berkeley Short channel IGFET Model 1 refers to a family of MOSFET transistor models for integrated circuit design It also refers to the BSIM group located in the Department of Electrical Engineering and Computer Sciences EECS at the University of California Berkeley that develops these models Accurate transistor models are needed for electronic circuit simulation which in turn is needed for integrated circuit design As the devices become smaller each process generation see Moore s law new models are needed to accurately reflect the transistor s behavior Commercial and industrial analog simulators such as SPICE have added many other device models as technology advanced and earlier models became inaccurate To attempt standardization of these models so that a set of model parameters may be used in different simulators an industry working group was formed the Compact Model Coalition 2 to choose maintain and promote the use of standard models BSIM models developed at UC Berkeley are one of these standards Other models supported by the council are PSP HICUM and MEXTRAM Archived 2014 12 28 at the Wayback Machine BSIM models editThe transistor models developed and currently maintained by UC Berkeley are BSIM CMG Common Multi Gate 3 BSIM IMG Independent Multi Gate 4 the only model published without source code whose publication is foreseen for July 13 2021 BSIM SOI Silicon on Insulator 5 BSIM BULK 6 formerly BSIM6 BSIM4 7 used for 0 13 mm to 20 nm nodes BSIM3 8 a predecessor of BSIM4 Original versions of BSIM models were written in the C programming language All newer versions of the models except BSIM4 and BSIM3 support only Verilog A For example the last version of BSIM SOI which supported C was the version BSIM SOIv4 4 References edit Sheu Scharfetter amp Ko Jeng August 1987 BSIM Berkeley Short Channel IGFET Model for MOS Transistors IEEE Journal of Solid State Circuits SC 22 4 558 566 Bibcode 1987IJSSC 22 558S doi 10 1109 JSSC 1987 1052773 Compact Model Coalition CMC Si2 org BSIM CMG Model BSIM Group UC Berkeley BSIM IMG Model BSIM Group UC Berkeley BSIM SOI Model BSIM Group UC Berkeley BSIM BULK Model BSIM Group UC Berkeley BSIM4 Model BSIM Group UC Berkeley BSIM3 Model BSIM Group UC Berkeley See also editElectronic circuit simulation SPICE Retrieved from https en wikipedia org w index php title BSIM amp oldid 1189475711, wikipedia, wiki, book, books, library,

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