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1 μm process

The 1 μm process (1 micrometre process) is a level of MOSFET semiconductor process technology that was commercialized around the 1984–1986 timeframe,[1][2] by leading semiconductor companies like NTT, NEC, Intel and IBM. It was the first process where CMOS was common (as opposed to NMOS).

The earliest MOSFET with a 1 μm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[3]

Products featuring 1.0 μm manufacturing process edit

  • NTT introduced the 1 μm process for its DRAM memory chips, including its 64k in 1979 and 256k in 1980.[4]
  • NEC's 1 Mbit DRAM memory chip was manufactured with the 1 μm process in 1984.[5]
  • Intel 80386 CPU launched in 1985 was manufactured using this process.[1]
  • Intel uses this process on the CHMOS III-E technology.[6]
  • Intel uses this process on the CHMOS IV technology.[7]

References edit

  1. ^ a b Mueller, S (21 July 2006). "Microprocessors from 1971 to the Present". informIT. from the original on 19 April 2015. Retrieved 11 May 2012.
  2. ^ Myslewski, R (15 November 2011). "Happy 40th birthday, Intel 4004!". TheRegister. from the original on 19 April 2015. Retrieved 19 April 2015.
  3. ^ Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256–268. Bibcode:1974IJSSC...9..256D. doi:10.1109/JSSC.1974.1050511. S2CID 283984.
  4. ^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). Massachusetts Institute of Technology. pp. 149–166. Retrieved 25 June 2019 – via CORE.
  5. ^ "Memory". STOL (Semiconductor Technology Online). Retrieved 25 June 2019.
  6. ^ Intel Corporation, "New Product Focus: Components: Two-and Four-Megabit EPROMs are High-Density Performers", Microcomputer Solutions, September/October 1989, page 14
  7. ^ Intel Corporation, "New Product Focus: Components: New ASSP Suits Mobile Applications", Microcomputer Solutions, September/October 1990, page 11

External links edit

  • Brief timeline of microprocessor development


process, this, article, needs, additional, citations, verification, please, help, improve, this, article, adding, citations, reliable, sources, unsourced, material, challenged, removed, find, sources, news, newspapers, books, scholar, jstor, september, 2015, l. This article needs additional citations for verification Please help improve this article by adding citations to reliable sources Unsourced material may be challenged and removed Find sources 1 mm process news newspapers books scholar JSTOR September 2015 Learn how and when to remove this template message The 1 mm process 1 micrometre process is a level of MOSFET semiconductor process technology that was commercialized around the 1984 1986 timeframe 1 2 by leading semiconductor companies like NTT NEC Intel and IBM It was the first process where CMOS was common as opposed to NMOS The earliest MOSFET with a 1 mm NMOS channel length was fabricated by a research team led by Robert H Dennard Hwa Nien Yu and F H Gaensslen at the IBM T J Watson Research Center in 1974 3 Products featuring 1 0 mm manufacturing process editNTT introduced the 1 mm process for its DRAM memory chips including its 64k in 1979 and 256k in 1980 4 NEC s 1 Mbit DRAM memory chip was manufactured with the 1 mm process in 1984 5 Intel 80386 CPU launched in 1985 was manufactured using this process 1 Intel uses this process on the CHMOS III E technology 6 Intel uses this process on the CHMOS IV technology 7 References edit a b Mueller S 21 July 2006 Microprocessors from 1971 to the Present informIT Archived from the original on 19 April 2015 Retrieved 11 May 2012 Myslewski R 15 November 2011 Happy 40th birthday Intel 4004 TheRegister Archived from the original on 19 April 2015 Retrieved 19 April 2015 Dennard Robert H Yu Hwa Nien Gaensslen F H Rideout V L Bassous E LeBlanc A R October 1974 Design of ion implanted MOSFET s with very small physical dimensions PDF IEEE Journal of Solid State Circuits 9 5 256 268 Bibcode 1974IJSSC 9 256D doi 10 1109 JSSC 1974 1050511 S2CID 283984 Gealow Jeffrey Carl 10 August 1990 Impact of Processing Technology on DRAM Sense Amplifier Design PDF Massachusetts Institute of Technology pp 149 166 Retrieved 25 June 2019 via CORE Memory STOL Semiconductor Technology Online Retrieved 25 June 2019 Intel Corporation New Product Focus Components Two and Four Megabit EPROMs are High Density Performers Microcomputer Solutions September October 1989 page 14 Intel Corporation New Product Focus Components New ASSP Suits Mobile Applications Microcomputer Solutions September October 1990 page 11External links editBrief timeline of microprocessor developmentPreceded by1 5 mm process MOSFET semiconductor device fabrication process Succeeded by800 nm process nbsp This nanotechnology related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title 1 mm process amp oldid 1195428643, wikipedia, wiki, book, books, library,

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