A wetting layer is an monolayer of atoms that is epitaxially grown on a flat surface. The atoms forming the wetting layer can be semimetallic elements/compounds or metallic alloys (for thin films). Wetting layers form when depositing a lattice-mismatched material on a crystalline substrate. This article refers to the wetting layer connected to the growth of self-assembled quantum dots (e.g. InAs on GaAs). These quantum dots form on top of the wetting layer. The wetting layer can influence the states of the quantum dot for applications in quantum information processing and quantum computation.
The wetting layer is epitaxially grown on a surface using molecular beam epitaxy (MBE). The temperatures required for wetting layer growth typically range from 400-500 degrees Celsius. When a material A is deposited on a surface of a lattice-mismatched material B, the first atomic layer of material A often adopts the lattice constant of B. This mono-layer of material A is called the wetting layer. When the thickness of layer A increases further, it becomes energetically unfavorable for material A to keep the lattice constant of B. Due to the high strain of layer A, additional atoms group together once a certain critical thickness of layer A is reached. This island formation reduces the elastic energy.[1] Overgrown with material B, the wetting layer forms a quantum well in case material A has a lower bandgap than B. In this case, the formed islands are quantum dots. Further annealing can be used to modify the physical properties of the wetting layer/quantum dot[2] .
Propertiesedit
The wetting layer is a close-to mono-atomic layer with a thickness of typically 0.5 nanometers. The electronic properties of the quantum dot can change as a result of the wetting layer.[3][4][5] Also, the strain of the quantum dot can change due to the wetting layer.[6]
Notesedit
^Lee, S.; Lazarenkova, O.; Von Allmen, P.; Oyafuso, F.; Klimeck, G. (2004). "Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots". Physical Review B. 70 (12): 125307. arXiv:cond-mat/0405019. Bibcode:2004PhRvB..70l5307L. doi:10.1103/PhysRevB.70.125307. S2CID 13994641.
^Sanguinetti, S.; Mano, T.; Gerosa, A.; Somaschini, C.; Bietti, S.; Koguchi, N.; Grilli, E.; Guzzi, M.; Gurioli, M.; Abbarchi, M. (2008). "Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures". Journal of Applied Physics. 104 (11): 113519–113519–5. Bibcode:2008JAP...104k3519S. doi:10.1063/1.3039802. ISSN 0021-8979.
^ Lee, Seungwon; Lazarenkova, Olga L.; von Allmen, Paul; Oyafuso, Fabiano; Klimeck, Gerhard (2004). "Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots". Physical Review B. 70 (12). arXiv:cond-mat/0405019. Bibcode:2004PhRvB..70l5307L. doi:10.1103/PhysRevB.70.125307. ISSN 1098-0121. S2CID 13994641.
^ Karrai, Khaled; Warburton, Richard J.; Schulhauser, Christian; Högele, Alexander; Urbaszek, Bernhard; McGhee, Ewan J.; Govorov, Alexander O.; Garcia, Jorge M.; Gerardot, Brian D.; Petroff, Pierre M. (2004). "Hybridization of electronic states in quantum dots through photon emission". Nature. 427 (6970): 135–138. Bibcode:2004Natur.427..135K. doi:10.1038/nature02109. ISSN 0028-0836. PMID 14712271. S2CID 4424992.
^Shahzadeh, Mohammadreza; Sabaeian, Mohammad (2014). "The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots". AIP Advances. 4 (6): 067113. Bibcode:2014AIPA....4f7113S. doi:10.1063/1.4881980. ISSN 2158-3226.
wetting, layer, wetting, layer, monolayer, atoms, that, epitaxially, grown, flat, surface, atoms, forming, wetting, layer, semimetallic, elements, compounds, metallic, alloys, thin, films, form, when, depositing, lattice, mismatched, material, crystalline, sub. A wetting layer is an monolayer of atoms that is epitaxially grown on a flat surface The atoms forming the wetting layer can be semimetallic elements compounds or metallic alloys for thin films Wetting layers form when depositing a lattice mismatched material on a crystalline substrate This article refers to the wetting layer connected to the growth of self assembled quantum dots e g InAs on GaAs These quantum dots form on top of the wetting layer The wetting layer can influence the states of the quantum dot for applications in quantum information processing and quantum computation Contents 1 Process 2 Properties 3 Notes 4 External linksProcess editThe wetting layer is epitaxially grown on a surface using molecular beam epitaxy MBE The temperatures required for wetting layer growth typically range from 400 500 degrees Celsius When a material A is deposited on a surface of a lattice mismatched material B the first atomic layer of material A often adopts the lattice constant of B This mono layer of material A is called the wetting layer When the thickness of layer A increases further it becomes energetically unfavorable for material A to keep the lattice constant of B Due to the high strain of layer A additional atoms group together once a certain critical thickness of layer A is reached This island formation reduces the elastic energy 1 Overgrown with material B the wetting layer forms a quantum well in case material A has a lower bandgap than B In this case the formed islands are quantum dots Further annealing can be used to modify the physical properties of the wetting layer quantum dot 2 Properties editThe wetting layer is a close to mono atomic layer with a thickness of typically 0 5 nanometers The electronic properties of the quantum dot can change as a result of the wetting layer 3 4 5 Also the strain of the quantum dot can change due to the wetting layer 6 Notes edit Lee S Lazarenkova O Von Allmen P Oyafuso F Klimeck G 2004 Effect of wetting layers on the strain and electronic structure of InAs self assembled quantum dots Physical Review B 70 12 125307 arXiv cond mat 0405019 Bibcode 2004PhRvB 70l5307L doi 10 1103 PhysRevB 70 125307 S2CID 13994641 Sanguinetti S Mano T Gerosa A Somaschini C Bietti S Koguchi N Grilli E Guzzi M Gurioli M Abbarchi M 2008 Rapid thermal annealing effects on self assembled quantum dot and quantum ring structures Journal of Applied Physics 104 11 113519 113519 5 Bibcode 2008JAP 104k3519S doi 10 1063 1 3039802 ISSN 0021 8979 Lee Seungwon Lazarenkova Olga L von Allmen Paul Oyafuso Fabiano Klimeck Gerhard 2004 Effect of wetting layers on the strain and electronic structure of InAs self assembled quantum dots Physical Review B 70 12 arXiv cond mat 0405019 Bibcode 2004PhRvB 70l5307L doi 10 1103 PhysRevB 70 125307 ISSN 1098 0121 S2CID 13994641 Karrai Khaled Warburton Richard J Schulhauser Christian Hogele Alexander Urbaszek Bernhard McGhee Ewan J Govorov Alexander O Garcia Jorge M Gerardot Brian D Petroff Pierre M 2004 Hybridization of electronic states in quantum dots through photon emission Nature 427 6970 135 138 Bibcode 2004Natur 427 135K doi 10 1038 nature02109 ISSN 0028 0836 PMID 14712271 S2CID 4424992 Shahzadeh Mohammadreza Sabaeian Mohammad 2014 The effects of wetting layer on electronic and optical properties of intersubband P to S transitions in strained dome shaped InAs GaAs quantum dots AIP Advances 4 6 067113 Bibcode 2014AIPA 4f7113S doi 10 1063 1 4881980 ISSN 2158 3226 Sun Chao Lu Pengfei Yu Zhongyuan Cao Huawei Zhang Lidong 2012 Wetting layers effect on InAs GaAs quantum dots Physica B Condensed Matter 407 22 4440 4445 Bibcode 2012PhyB 407 4440S doi 10 1016 j physb 2012 07 039 ISSN 0921 4526 External links editWetting layer on arxiv org group website of M Dahne Retrieved from https en wikipedia org w index php title Wetting layer amp oldid 1170125462, wikipedia, wiki, book, books, library,
