The Shockley diode (named after physicist William Shockley) is a four-layer semiconductordiode, which was one of the first semiconductor devices invented. It is a PNPN diode with alternating layers of P-type and N-type material. It is equivalent to a thyristor with a disconnected gate. Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s. The Shockley diode has a negative resistance characteristic.[1] It was largely superseded by the diac.
A sculpture representing a Shockley 4-layer diode, on the sidewalk in front of the new building at 391 San Antonio Rd., Mountain View, California, which was the original site of the Shockley Semiconductor Laboratories where the first silicon device work in Silicon Valley was done
Unlike other semiconductor diodes, the Shockley diode has more than one PN junction. The construction includes four sections of semiconductors placed alternately between the anode and cathode in the pattern of PNPN. Though it has multiple junctions, it is termed a diode for being a two-terminal device.
The Shockley diode remains in an OFF state, with a very high resistance, until a voltage greater than the trigger voltage is applied across its terminals. When the voltage exceeds the trigger value, the resistance drops to an extremely low value and the device switches ON. The constituent transistors help in maintaining the ON and OFF states. Since the construction resembles a pair of interconnected bipolar transistors, one PNP and other NPN, neither transistor can turn ON until the other is turned ON due to the absence of any current through the base-emitter junction. Once sufficient voltage is applied and one of the transistors breaks down, it starts conducting and allows base current to flow through the other transistor, resulting in saturation of both the transistors, keeping both in ON state.
On reducing the voltage to a sufficiently low level, the current flowing becomes insufficient to maintain the transistor bias. Due to insufficient current, one of the transistors will cut off, interrupting the base current to the other transistor, hence sealing both transistors in the OFF state.
Small-signal Shockley diodes are no longer manufactured, but the unidirectional thyristor breakover diode, also known as the dynistor, is a functionally equivalent power device. An early publication about dynistors was published in 1958.[5] In 1988 the first dynistor using silicon carbide was made.[6] Dynistors can be used as switches in micro- and nanosecond power pulse generators.[7]
Referencesedit
Michael Riordan and Lillian Hoddeson; Crystal Fire: The Invention of the Transistor and the Birth of the Information Age. New York: Norton (1997) ISBN0-393-31851-6 pbk.
^. 2007-02-21. Archived from the original on 2007-02-21. Retrieved 2019-04-09.
^Willfried Schurig (1971), amateurreihe electronica: Kennlinien elektronischer Bauelemente. Teil II: Halbleiter Dioden (in German), Berlin: Deutscher Militärverlag, p. 119
^Pittman, P. (Spring 1958). The application of the dynistor diode to off-on controllers. 1958 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. Vol. I. pp. 55–56. doi:10.1109/ISSCC.1958.1155602.
^Chelnokov, V. E.; Vainshtein, S. N.; Levinshtein, M. E.; Dmitriev, V. A. (1988-08-04). "First SiC dynistor". Electronics Letters. 24 (16): 1031–1033. doi:10.1049/el:19880702. ISSN 1350-911X.
^Aristov, Yu.V.; Grekhov, I.V.; Korotkov, S.V.; Lyublinsky, A.G. (September 22–26, 2008). "Dynistor Switches for Micro- and Nanosecond Power Pulse Generators". Acta Physica Polonica A. Proceedings of the 2nd Euro-Asian Pulsed Power Conference, Vilnius, Lithuania, September 22–26, 2008. 115 (6): 1031–1033. doi:10.12693/APhysPolA.115.1031.
External linksedit
Wikimedia Commons has media related to Shockley diodes.
Shockley diode analysis
Shockley diode information
Transistor Diodes, by Shockley himself (Jan. 1960)
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For the Shockley Diode Equation see Diode Shockley diode equation Not to be confused with Schottky diode The Shockley diode named after physicist William Shockley is a four layer semiconductor diode which was one of the first semiconductor devices invented It is a PNPN diode with alternating layers of P type and N type material It is equivalent to a thyristor with a disconnected gate Shockley diodes were manufactured and marketed by Shockley Semiconductor Laboratory in the late 1950s The Shockley diode has a negative resistance characteristic 1 It was largely superseded by the diac Shockley diodeInventedWilliam ShockleyPin configuration Anode and CathodeElectronic symbolA sculpture representing a Shockley 4 layer diode on the sidewalk in front of the new building at 391 San Antonio Rd Mountain View California which was the original site of the Shockley Semiconductor Laboratories where the first silicon device work in Silicon Valley was done Contents 1 Working 2 Usages 3 Typical values 4 Dynistor 5 References 6 External linksWorking edit nbsp Unlike other semiconductor diodes the Shockley diode has more than one PN junction The construction includes four sections of semiconductors placed alternately between the anode and cathode in the pattern of PNPN Though it has multiple junctions it is termed a diode for being a two terminal device The Shockley diode remains in an OFF state with a very high resistance until a voltage greater than the trigger voltage is applied across its terminals When the voltage exceeds the trigger value the resistance drops to an extremely low value and the device switches ON The constituent transistors help in maintaining the ON and OFF states Since the construction resembles a pair of interconnected bipolar transistors one PNP and other NPN neither transistor can turn ON until the other is turned ON due to the absence of any current through the base emitter junction Once sufficient voltage is applied and one of the transistors breaks down it starts conducting and allows base current to flow through the other transistor resulting in saturation of both the transistors keeping both in ON state On reducing the voltage to a sufficiently low level the current flowing becomes insufficient to maintain the transistor bias Due to insufficient current one of the transistors will cut off interrupting the base current to the other transistor hence sealing both transistors in the OFF state Usages editCommon applications Trigger switch for silicon controlled rectifier Relaxation oscillator sawtooth oscillatorNiche applications Audio amplifier 2 3 Typical values edit nbsp V I diagramDescription Range 4 TypicallyForward operationSwitching voltage Vs 10 V to 250 V 50 V 4 VHolding voltage Vh 0 5 V to 2 V 0 8 VSwitching current Is a few µA to some mA 120 µAHold current IH 1 to 50 mA 14 to 45 mAReverse operationReverse current IR 15 µAReverse breakdown voltage Vrb 10 V to 250 V 60 VDynistor edit nbsp DynistorSmall signal Shockley diodes are no longer manufactured but the unidirectional thyristor breakover diode also known as the dynistor is a functionally equivalent power device An early publication about dynistors was published in 1958 5 In 1988 the first dynistor using silicon carbide was made 6 Dynistors can be used as switches in micro and nanosecond power pulse generators 7 References editMichael Riordan and Lillian Hoddeson Crystal Fire The Invention of the Transistor and the Birth of the Information Age New York Norton 1997 ISBN 0 393 31851 6 pbk Transistor Museum Photo Gallery Shockley Diode 4 LayerTransistor semiconductormuseum com Retrieved 2019 04 09 Transistor Museum Photo Gallery Shockley Diode Transistor 4 Layer semiconductormuseum com Retrieved 2019 04 09 Just Diodes In Hi Fi Amplifier 2007 02 21 Archived from the original on 2007 02 21 Retrieved 2019 04 09 Willfried Schurig 1971 amateurreihe electronica Kennlinien elektronischer Bauelemente Teil II Halbleiter Dioden in German Berlin Deutscher Militarverlag p 119 Pittman P Spring 1958 The application of the dynistor diode to off on controllers 1958 IEEE International Solid State Circuits Conference Digest of Technical Papers Vol I pp 55 56 doi 10 1109 ISSCC 1958 1155602 Chelnokov V E Vainshtein S N Levinshtein M E Dmitriev V A 1988 08 04 First SiC dynistor Electronics Letters 24 16 1031 1033 doi 10 1049 el 19880702 ISSN 1350 911X Aristov Yu V Grekhov I V Korotkov S V Lyublinsky A G September 22 26 2008 Dynistor Switches for Micro and Nanosecond Power Pulse Generators Acta Physica Polonica A Proceedings of the 2nd Euro Asian Pulsed Power Conference Vilnius Lithuania September 22 26 2008 115 6 1031 1033 doi 10 12693 APhysPolA 115 1031 External links edit nbsp Wikimedia Commons has media related to Shockley diodes Shockley diode analysis Shockley diode information Transistor Diodes by Shockley himself Jan 1960 nbsp This electronics related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w 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