The static induction thyristor (SIT, SITh) is a thyristor with a buried gate structure in which the gate electrodes are placed in n-base region. Since they are normally on-state, gate electrodes must be negatively or anode biased to hold off-state.[1] It has low noise, low distortion, high audio frequency power capability. The turn-on and turn-off times are very short, typically 0.25 microseconds.[2][3][4]
The first static induction thyristor was invented by Japanese engineer Jun-ichi Nishizawa in 1975.[5] It was capable of conducting large currents with a low forward bias and had a small turn-off time. It had a self controlled gate turn-off thyristor that was commercially available through Tokyo Electric Co. (now Toyo Engineering Corporation) in 1988. The initial device consisted of a p+nn+ diode and a buried p+ grid.[citation needed]
In 1999, an analytical model of the SITh was developed for the PSPICE circuit simulator.[6] In 2010, a newer version of SITh was developed by Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing, the new feature of which was its high forward blocking voltage.[7]
^Li, Siyuan; Liu Su; Yang, Jianhong; Sang, Baosheng; Liu, Ruixi (1994). Study of 40 A / 1000 V static induction thyristor (SITH). Vol. 1. Beijing, China: International Academic Publishers. pp. 205–208. ISBN978-7-80003-315-5.
^J. Nishizawa; K. Nakamura (1978). "Static induction thyristor". Revue de Physique Appliquée. 13 (12): 725–728. doi:10.1051/rphysap:019780013012072500.
^ChunJuan Liu; Su Liu; YaJie Bai (2014). "Switching performances of static induction thyristor with buried-gate structure". Science China Information Sciences. 57 (6): 1–6. doi:10.1007/s11432-013-4955-x.
^Bongseong Kim; Kwang-Cheol Ko; Eiki Hotta (2011). "Study of Switching Characteristics of Static Induction Thyristor for Pulsed Power Applications". IEEE Transactions on Plasma Science. 39 (5): 901–905. Bibcode:2011ITPS...39..901K. doi:10.1109/TPS.2010.2099242. eISSN 1939-9375. ISSN 0093-3813. OCLC 630064521. S2CID 32745943.
^a Drummer, G. W. (January 1997). Electronic Inventions and Discoveries: Electronics from its earliest beginnings to the present day, Fourth Edition. CRC Press. ISBN9780750304931.
^J. Wang; B.W. Williams (1999). "A new static induction thyristor (SITh) analytical model". IEEE Transactions on Power Electronics. 14 (5): 866–876. Bibcode:1999ITPE...14..866W. doi:10.1109/63.788483. eISSN 1941-0107. OCLC 1004551313.
^Zhang Caizhen; Wang Yongshun; Liu Chunjuan; Wang Zaixing (2010). "A new static induction thyristor with high forward blocking voltage and excellent switching performances". Journal of Semiconductors. 31 (3): 034005. doi:10.1088/1674-4926/31/3/034005. ISSN 1674-4926. OCLC 827111246. S2CID 250665918.
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Static induction thyristor
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static, induction, thyristor, static, induction, thyristor, sith, thyristor, with, buried, gate, structure, which, gate, electrodes, placed, base, region, since, they, normally, state, gate, electrodes, must, negatively, anode, biased, hold, state, noise, dist. The static induction thyristor SIT SITh is a thyristor with a buried gate structure in which the gate electrodes are placed in n base region Since they are normally on state gate electrodes must be negatively or anode biased to hold off state 1 It has low noise low distortion high audio frequency power capability The turn on and turn off times are very short typically 0 25 microseconds 2 3 4 Contents 1 History 2 See also 3 References 4 External linksHistory editThe first static induction thyristor was invented by Japanese engineer Jun ichi Nishizawa in 1975 5 It was capable of conducting large currents with a low forward bias and had a small turn off time It had a self controlled gate turn off thyristor that was commercially available through Tokyo Electric Co now Toyo Engineering Corporation in 1988 The initial device consisted of a p nn diode and a buried p grid citation needed In 1999 an analytical model of the SITh was developed for the PSPICE circuit simulator 6 In 2010 a newer version of SITh was developed by Zhang Caizhen Wang Yongshun Liu Chunjuan and Wang Zaixing the new feature of which was its high forward blocking voltage 7 See also editStatic induction transistor MOS composite static induction thyristorReferences edit Li Siyuan Liu Su Yang Jianhong Sang Baosheng Liu Ruixi 1994 Study of 40 A 1000 V static induction thyristor SITH Vol 1 Beijing China International Academic Publishers pp 205 208 ISBN 978 7 80003 315 5 J Nishizawa K Nakamura 1978 Static induction thyristor Revue de Physique Appliquee 13 12 725 728 doi 10 1051 rphysap 019780013012072500 ChunJuan Liu Su Liu YaJie Bai 2014 Switching performances of static induction thyristor with buried gate structure Science China Information Sciences 57 6 1 6 doi 10 1007 s11432 013 4955 x Bongseong Kim Kwang Cheol Ko Eiki Hotta 2011 Study of Switching Characteristics of Static Induction Thyristor for Pulsed Power Applications IEEE Transactions on Plasma Science 39 5 901 905 Bibcode 2011ITPS 39 901K doi 10 1109 TPS 2010 2099242 eISSN 1939 9375 ISSN 0093 3813 OCLC 630064521 S2CID 32745943 a Drummer G W January 1997 Electronic Inventions and Discoveries Electronics from its earliest beginnings to the present day Fourth Edition CRC Press ISBN 9780750304931 J Wang B W Williams 1999 A new static induction thyristor SITh analytical model IEEE Transactions on Power Electronics 14 5 866 876 Bibcode 1999ITPE 14 866W doi 10 1109 63 788483 eISSN 1941 0107 OCLC 1004551313 Zhang Caizhen Wang Yongshun Liu Chunjuan Wang Zaixing 2010 A new static induction thyristor with high forward blocking voltage and excellent switching performances Journal of Semiconductors 31 3 034005 doi 10 1088 1674 4926 31 3 034005 ISSN 1674 4926 OCLC 827111246 S2CID 250665918 External links editStatic induction thyristor nbsp This electronics related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title Static induction thyristor amp oldid 1217629867, wikipedia, wiki, book, books, library,
