Reliability of semiconductor devices can be summarized as follows:
Semiconductor devices are very sensitive to impurities and particles. Therefore, to manufacture these devices it is necessary to manage many processes while accurately controlling the level of impurities and particles. The finished product quality depends upon the many layered relationship of each interacting substance in the semiconductor, including metallization, chip material (list of semiconductor materials) and package.
The problems of micro-processes, and thin films and must be fully understood as they apply to metallization and wire bonding. It is also necessary to analyze surface phenomena from the aspect of thin films.
Due to the rapid advances in technology, many new devices are developed using new materials and processes, and design calendar time is limited due to non-recurring engineering constraints, plus time to market concerns. Consequently, it is not possible to base new designs on the reliability of existing devices.
To achieve economy of scale, semiconductor products are manufactured in high volume. Furthermore, repair of finished semiconductor products is impractical. Therefore, incorporation of reliability at the design stage and reduction of variation in the production stage have become essential.
Reliability of semiconductors is kept high through several methods. Cleanrooms control impurities, process control controls processing, and burn-in (short term operation at extremes) and probe and test reduce escapes. Probe (wafer prober) tests the semiconductor die, prior to packaging, via micro-probes connected to test equipment. Final test tests the packaged device, often pre-, and post burn-in for a set of parameters that assure operation. Process and design weaknesses are identified by applying a set of stress tests in the qualification phase of the semiconductors before their market introduction e. g. according to the AEC Q100 and Q101 stress qualifications.[1] Parts Average Testing is a statistical method for recognizing and quarantining semiconductor die that have a higher probability of reliability failures. This technique identifies characteristics that are within specification but outside of a normal distribution for that population as at-risk outliers not suitable for high reliability applications. Tester-based Parts Average Testing varieties include Parametric Parts Average Testing (P-PAT) and Geographical Parts Average Testing (G-PAT), among others. Inline Parts Average Testing (I-PAT) uses data from production process control inspection and metrology to perform the outlier recognition function.[2][3]
Bond strength measurement is performed in two basic types: pull testing and shear testing. Both can be done destructively, which is more common, or non destructively. Non destructive tests are normally used when extreme reliability is required such as in military or aerospace applications.[4]
Failure mechanisms
Failure mechanisms of electronic semiconductor devices fall in the following categories
MIL-HDBK-344 Environmental Stress Screening of Electronic Equipment
MIL-STD-690C Failure Rate Sampling Plans and Procedures
MIL-STD-721C Definition of Terms for Reliability and Maintainability
MIL-STD-756B Reliability Modeling and Prediction
MIL-HDBK-781 Reliability Test Methods, Plans and Environments for Engineering Development, Qualification and Production
MIL-STD-1543B Reliability Program Requirements for Space and Missile Systems
MIL-STD-1629A Procedures for Performing a Failure Mode, Effects, and Criticality Analysis
MIL-STD-1686B Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices)
MIL-STD-2074 Failure Classification for Reliability Testing
MIL-STD-2164 Environment Stress Screening Process for Electronic Equipment
(PDF). Renesas Technology Corp. 31 August 2006. Archived from the original (PDF) on 1 December 2006.
Akbari, M.; Bahman, A.S.; Reigosa, P.D.; Iannuzzo, F.; Bina, M.T. (September 2018). "Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions". Microelectronics Reliability. 88–90: 1135–1140. doi:10.1016/j.microrel.2018.07.150. S2CID 53529098.
March 20, 2023
reliability, semiconductor, this, article, multiple, issues, please, help, improve, discuss, these, issues, talk, page, learn, when, remove, these, template, messages, lead, section, this, article, need, rewritten, lead, layout, guide, ensure, section, follows. This article has multiple issues Please help improve it or discuss these issues on the talk page Learn how and when to remove these template messages The lead section of this article may need to be rewritten Use the lead layout guide to ensure the section follows Wikipedia s norms and is inclusive of all essential details October 2017 Learn how and when to remove this template message This article may be too technical for most readers to understand Please help improve it to make it understandable to non experts without removing the technical details October 2017 Learn how and when to remove this template message Learn how and when to remove this template message Reliability of semiconductor devices can be summarized as follows Semiconductor devices are very sensitive to impurities and particles Therefore to manufacture these devices it is necessary to manage many processes while accurately controlling the level of impurities and particles The finished product quality depends upon the many layered relationship of each interacting substance in the semiconductor including metallization chip material list of semiconductor materials and package The problems of micro processes and thin films and must be fully understood as they apply to metallization and wire bonding It is also necessary to analyze surface phenomena from the aspect of thin films Due to the rapid advances in technology many new devices are developed using new materials and processes and design calendar time is limited due to non recurring engineering constraints plus time to market concerns Consequently it is not possible to base new designs on the reliability of existing devices To achieve economy of scale semiconductor products are manufactured in high volume Furthermore repair of finished semiconductor products is impractical Therefore incorporation of reliability at the design stage and reduction of variation in the production stage have become essential Reliability of semiconductor devices may depend on assembly use environmental and cooling conditions Stress factors affecting device reliability include gas dust contamination voltage current density temperature humidity mechanical stress vibration shock radiation pressure and intensity of magnetic and electrical fields Design factors affecting semiconductor reliability include voltage power and current derating metastability logic timing margins logic simulation timing analysis temperature derating and process control Contents 1 Methods of improvement 2 Failure mechanisms 2 1 Material interaction induced mechanisms 2 2 Stress induced failure mechanisms 2 3 Mechanically induced failure mechanisms 2 4 Environmentally induced failure mechanisms 3 See also 4 References 5 BibliographyMethods of improvement EditReliability of semiconductors is kept high through several methods Cleanrooms control impurities process control controls processing and burn in short term operation at extremes and probe and test reduce escapes Probe wafer prober tests the semiconductor die prior to packaging via micro probes connected to test equipment Final test tests the packaged device often pre and post burn in for a set of parameters that assure operation Process and design weaknesses are identified by applying a set of stress tests in the qualification phase of the semiconductors before their market introduction e g according to the AEC Q100 and Q101 stress qualifications 1 Parts Average Testing is a statistical method for recognizing and quarantining semiconductor die that have a higher probability of reliability failures This technique identifies characteristics that are within specification but outside of a normal distribution for that population as at risk outliers not suitable for high reliability applications Tester based Parts Average Testing varieties include Parametric Parts Average Testing P PAT and Geographical Parts Average Testing G PAT among others Inline Parts Average Testing I PAT uses data from production process control inspection and metrology to perform the outlier recognition function 2 3 Bond strength measurement is performed in two basic types pull testing and shear testing Both can be done destructively which is more common or non destructively Non destructive tests are normally used when extreme reliability is required such as in military or aerospace applications 4 Failure mechanisms EditFailure mechanisms of electronic semiconductor devices fall in the following categories Material interaction induced mechanisms Stress induced mechanisms Mechanically induced failure mechanisms Environmentally induced failure mechanisms Material interaction induced mechanisms Edit Field effect transistor gate metal sinking Ohmic contact degradation Channel degradation Surface state effects Package molding contamination impurities in packaging compounds cause electrical failureStress induced failure mechanisms Edit Electromigration electrically induced movement of the materials in the chip Burnout localized overstress Hot Electron Trapping due to overdrive in power RF circuits Electrical Stress Electrostatic discharge High Electro Magnetic Fields HIRF Latch up overvoltage overcurrentMechanically induced failure mechanisms Edit Die fracture due to mis match of thermal expansion coefficients Die attach voids manufacturing defect screenable with Scanning Acoustic Microscopy Solder joint failure by creep fatigue or intermetallics cracks Die pad molding compound delamination due to thermal cyclingEnvironmentally induced failure mechanisms Edit Humidity effects moisture absorption by the package and circuit Hydrogen effects Hydrogen induced breakdown of portions of the circuit Metal Other Temperature Effects Accelerated Aging Increased Electro migration with temperature Increased Burn OutSee also EditTransistor aging Failure analysis Cleanroom Burn in List of materials testing resources List of materials analysis methodsReferences Edit AEC Documents AEC Q001 PDF D W Price and R J Rathert KLA Tencor Corp Best Known Methods for Latent Reliability Defect Control in 90nm 14nm Semiconductor Fabs Nineteenth Annual Automotive Electronics Reliability Workshop Novi Michigan April 2017 Sykes Bob June 2010 Why test bonds Global SMT amp Packaging magazine Bibliography EditGiulio Di Giacomo Dec 1 1996 Reliability of Electronic Packages and Semiconductor Devices McGraw Hill A Christou amp B A Unger Dec 31 1989 Semiconductor Device Reliability NATO Science Series E MIL HDBK 217F Reliability Prediction of Electronic Equipment MIL HDBK 251 Reliability Design Thermal Applications MIL HDBK H 108 Sampling Procedures and Tables for Life and Reliability Testing Based on Exponential Distribution MIL HDBK 338 Electronic Reliability Design Handbook MIL HDBK 344 Environmental Stress Screening of Electronic Equipment MIL STD 690C Failure Rate Sampling Plans and Procedures MIL STD 721C Definition of Terms for Reliability and Maintainability MIL STD 756B Reliability Modeling and Prediction MIL HDBK 781 Reliability Test Methods Plans and Environments for Engineering Development Qualification and Production MIL STD 1543B Reliability Program Requirements for Space and Missile Systems MIL STD 1629A Procedures for Performing a Failure Mode Effects and Criticality Analysis MIL STD 1686B Electrostatic Discharge Control Program for Protection of Electrical and Electronic Parts Assemblies and Equipment Excluding Electrically Initiated Explosive Devices MIL STD 2074 Failure Classification for Reliability Testing MIL STD 2164 Environment Stress Screening Process for Electronic Equipment Semiconductor Reliability Handbook PDF Renesas Technology Corp 31 August 2006 Archived from the original PDF on 1 December 2006 Kayali S Basic Failure Modes and Mechanisms PDF a href Template Cite journal html title Template Cite journal cite journal a Cite journal requires journal help full citation needed Reliability Standards amp Handbooks Archived from the original on 8 November 2005 Akbari Mohsen Tavakoli Bina Mohammad Bahman Amir Sajjad Eskandari Bahman Pouresmaeil Edris Blaabjerg Frede 2021 An Extended Multilayer Thermal Model for Multichip IGBT Modules Considering Thermal Aging IEEE Access 9 84217 84230 doi 10 1109 ACCESS 2021 3083063 S2CID 235455172 Akbari M Bahman A S Reigosa P D Iannuzzo F Bina M T September 2018 Thermal modeling of wire bonded power modules considering non uniform temperature and electric current interactions Microelectronics Reliability 88 90 1135 1140 doi 10 1016 j microrel 2018 07 150 S2CID 53529098 Retrieved from https en wikipedia org w index php title Reliability semiconductor amp oldid 1095187596, wikipedia, wiki, book, books, library,
