Random dopant fluctuation (RDF) is a form of process variation resulting from variation in the implanted impurity concentration. In MOSFETtransistors, RDF in the channel region can alter the transistor's properties, especially threshold voltage. In newer process technologies RDF has a larger effect because the total number of dopants is fewer, and the addition or deletion of a few impurity atoms can significantly alter transistor properties. RDF is a local form of process variation, meaning that two neighbouring transistors may have significantly different dopant concentrations.[1]
References
^ Asenov, A. Huang, Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET's: A 3-D “atomistic” simulation study, Electron Devices, IEEE Transactions, 45 , Issue: 12
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random, dopant, fluctuation, this, article, needs, additional, citations, verification, please, help, improve, this, article, adding, citations, reliable, sources, unsourced, material, challenged, removed, find, sources, news, newspapers, books, scholar, jstor. This article needs additional citations for verification Please help improve this article by adding citations to reliable sources Unsourced material may be challenged and removed Find sources Random dopant fluctuation news newspapers books scholar JSTOR November 2012 Learn how and when to remove this template message Random dopant fluctuation RDF is a form of process variation resulting from variation in the implanted impurity concentration In MOSFET transistors RDF in the channel region can alter the transistor s properties especially threshold voltage In newer process technologies RDF has a larger effect because the total number of dopants is fewer and the addition or deletion of a few impurity atoms can significantly alter transistor properties RDF is a local form of process variation meaning that two neighbouring transistors may have significantly different dopant concentrations 1 References Edit Asenov A Huang Random dopant induced threshold voltage lowering and fluctuations in sub 0 1 mm MOSFET s A 3 D atomistic simulation study Electron Devices IEEE Transactions 45 Issue 12 This electronics related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title Random dopant fluctuation amp oldid 863924150, wikipedia, wiki, book, books, library,
