Junction-Less nanowire transistor (JLNT) is a type of Field-effect transistor (FET) in which the channel consists of one or more nanowires and does not contain a junction.
Multiple JLNT devices were manufactured in various labs:
Tyndall National Institute in Irelandedit
JLT is a nanowire-based transistor that has no gate junction.[1] (Even MOSFET has a gate junction, although its gate is electrically insulated from the controlled region.) Junctions are difficult to fabricate, and, because they are a significant source of current leakage, they waste significant power and heat. Eliminating them held the promise of cheaper and denser microchips. The JNT uses a simple nanowire of silicon surrounded by an electrically isolated "wedding ring" that acts to gate the flow of electrons through the wire. This method has been described as akin to squeezing a garden hose to gate the flow of water through the hose. The nanowire is heavily n-doped, making it an excellent conductor. Crucially the gate, comprising silicon, is heavily p-doped; and its presence depletes the underlying silicon nanowire thereby preventing carrier flow past the gate.
LAASedit
A Junction-Less Vertical Nano-Wire FET (JLVNFET) manufacturing process was developed in Laboratory for Analysis and Architecture of Systems (LAAS).[2]
Electrical Behaviouredit
Thus the device is turned off not by reverse bias voltage applied to the gate, as in the case of conventional MOSFET but by full depletion of the channel. This depletion is caused due to work-function difference (Contact_potentials) between the gate material and doped silicon in the nanowire.
The JNT uses bulk conduction instead of surface channel conduction. The current drive is controlled by doping concentration and not by gate capacitance.[3]
Germanium has been used instead of silicon nanowires.[4]
Referencesedit
^Kranti, A.; Yan, R.; Lee, C. -W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P.; Colinge, J. P. (2010). "Junctionless nanowire transistor (JNT): Properties and design guidelines". 2010 Proceedings of the European Solid State Device Research Conference. p. 357. doi:10.1109/ESSDERC.2010.5618216. ISBN978-1-4244-6658-0.
^Colinge, J. P.; Kranti, A.; Yan, R.; Lee, C. W.; Ferain, I.; Yu, R.; Dehdashti Akhavan, N.; Razavi, P. (2011). "Junctionless Nanowire Transistor (JNT): Properties and design guidelines". Solid-State Electronics. 65–66: 33–37. Bibcode:2011SSEle..65...33C. doi:10.1016/j.sse.2011.06.004. S2CID 8382657.
^Yu, Ran (2013). "Junctionless nanowire transistor fabricated with high mobility Ge channel". Physica Status Solidi RRL. 8: 65–68. doi:10.1002/pssr.201300119. S2CID 93197577.
Junctionless Nanowire Transistor: Properties and Device Guidelines
Ferain Junctionless Transistors (pdf)
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junctionless, nanowire, transistor, junction, less, nanowire, transistor, jlnt, type, field, effect, transistor, which, channel, consists, more, nanowires, does, contain, junction, contents, existing, devices, tyndall, national, institute, ireland, laas, elect. Junction Less nanowire transistor JLNT is a type of Field effect transistor FET in which the channel consists of one or more nanowires and does not contain a junction Contents 1 Existing devices 1 1 Tyndall National Institute in Ireland 1 2 LAAS 2 Electrical Behaviour 3 ReferencesExisting devices editMultiple JLNT devices were manufactured in various labs Tyndall National Institute in Ireland edit JLT is a nanowire based transistor that has no gate junction 1 Even MOSFET has a gate junction although its gate is electrically insulated from the controlled region Junctions are difficult to fabricate and because they are a significant source of current leakage they waste significant power and heat Eliminating them held the promise of cheaper and denser microchips The JNT uses a simple nanowire of silicon surrounded by an electrically isolated wedding ring that acts to gate the flow of electrons through the wire This method has been described as akin to squeezing a garden hose to gate the flow of water through the hose The nanowire is heavily n doped making it an excellent conductor Crucially the gate comprising silicon is heavily p doped and its presence depletes the underlying silicon nanowire thereby preventing carrier flow past the gate LAAS edit A Junction Less Vertical Nano Wire FET JLVNFET manufacturing process was developed in Laboratory for Analysis and Architecture of Systems LAAS 2 Electrical Behaviour editThus the device is turned off not by reverse bias voltage applied to the gate as in the case of conventional MOSFET but by full depletion of the channel This depletion is caused due to work function difference Contact potentials between the gate material and doped silicon in the nanowire The JNT uses bulk conduction instead of surface channel conduction The current drive is controlled by doping concentration and not by gate capacitance 3 Germanium has been used instead of silicon nanowires 4 References edit Kranti A Yan R Lee C W Ferain I Yu R Dehdashti Akhavan N Razavi P Colinge J P 2010 Junctionless nanowire transistor JNT Properties and design guidelines 2010 Proceedings of the European Solid State Device Research Conference p 357 doi 10 1109 ESSDERC 2010 5618216 ISBN 978 1 4244 6658 0 Larrieu Guilhem Han X L 2013 Vertical nanowire array based field effect transistors for ultimate scaling Nanoscale 5 6 2437 2441 Bibcode 2013Nanos 5 2437L doi 10 1039 c3nr33738c eISSN 2040 3372 ISSN 2040 3364 PMID 23403487 Colinge J P Kranti A Yan R Lee C W Ferain I Yu R Dehdashti Akhavan N Razavi P 2011 Junctionless Nanowire Transistor JNT Properties and design guidelines Solid State Electronics 65 66 33 37 Bibcode 2011SSEle 65 33C doi 10 1016 j sse 2011 06 004 S2CID 8382657 Yu Ran 2013 Junctionless nanowire transistor fabricated with high mobility Ge channel Physica Status Solidi RRL 8 65 68 doi 10 1002 pssr 201300119 S2CID 93197577 Junctionless Nanowire Transistor Properties and Device GuidelinesFerain Junctionless Transistors pdf nbsp This electronics related article is a stub You can help Wikipedia by expanding it vte Retrieved from https en wikipedia org w index php title Junctionless nanowire transistor amp oldid 1188140040, wikipedia, wiki, book, books, library,
