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Gallium indium antimonide

January 01, 1970

Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound. It can be considered as an alloy between gallium antimonide and indium antimonide. The alloy can contain any ratio between gallium and indium. GaInSb refers generally to any composition of the alloy.

Preparation edit

GaInSb films have been grown by molecular beam epitaxy,[1] chemical beam epitaxy[2] and liquid phase epitaxy[3] on gallium arsenide and gallium antimonide substrates. It is often incorporated into layered heterostructures with other III-V compounds.

Electronic Properties edit

 
Dependence of the direct and indirect band gaps of GaInSb on composition at room temperature (T = 300 K).[4][5]

The bandgap and lattice constant of GaInSb alloys are between those of pure GaSb (a = 0.610 nm, Eg = 0.73 eV) and InSb (a = 0.648 nm, Eg = 0.17 eV).[4] Over all compositions, the bandgap is direct, like in pure GaSb and InSb.

Applications edit

InGaSb and InGaSb-containing heterostructures have been studied for use in near- to mid-infrared photodetectors,[6][7][8] transistors,[9][10] and hall effect sensors.[11]

References edit

  1. ^ Kodama, M., Kimata, M. (1985). "Molecular beam epitaxy of GaSb and InGaSb". Journal of Crystal Growth. 73 (3): 641–645. Bibcode:1985JCrGr..73..641K. doi:10.1016/0022-0248(85)90031-4.
  2. ^ Kaneko, T., Asahi, H., Okuno, Y., Gonda, S. (1989). "MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb". Journal of Crystal Growth. 95 (1): 158–162. Bibcode:1989JCrGr..95..158K. doi:10.1016/0022-0248(89)90372-2.
  3. ^ Mauk, M. G., Tata, A. N., Cox, J. A. (2001). "Solution growth of thick III–V antimonide alloy epilayers (InAsSb, InGaSb, InGaAsSb, AlGaAsSb, and InAsSbP) for "virtual substrates"". Journal of Crystal Growth. 225 (2): 236–243. Bibcode:2001JCrGr.225..236M. doi:10.1016/S0022-0248(01)00843-0.
  4. ^ a b Vurgaftman, I., Meyer, J. R., Ram-Mohan, L. R. (2001). "Band parameters for III–V compound semiconductors and their alloys". Journal of Applied Physics. 89 (11): 5815–5875. Bibcode:2001JAP....89.5815V. doi:10.1063/1.1368156.
  5. ^ Adachi, S. (1987). "Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4 μm optoelectronic device applications". Journal of Applied Physics. 61 (10): 4869–4876. doi:10.1063/1.338352.
  6. ^ Rogalski, A., Martyniuk, P. (2006). "InAs/GaInSb superlattices as a promising material system for third generation infrared detectors". Infrared Physics & Technology. 48 (1): 39–52. Bibcode:2006InPhT..48...39R. doi:10.1016/j.infrared.2005.01.003.
  7. ^ Li, D., Lan, C., Manikandan, A., Yip, S., Zhou, Z., Liang, X., Shu, L., Chueh, Y.-L., Han, N., Ho, J. C. (2019). "Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires". Nature Communications. 10 (1). Nature Publishing Group: 1664. Bibcode:2019NatCo..10.1664L. doi:10.1038/s41467-019-09606-y. PMC 6458123. PMID 30971702.
  8. ^ Refaat, T. F., Abedin, M. N., Bhagwat, V., Bhat, I. B., Dutta, P. S., Singh, U. N. (2004). "InGaSb photodetectors using an InGaSb substrate for 2μm applications". Applied Physics Letters. 85 (11): 1874–1876. Bibcode:2004ApPhL..85.1874R. doi:10.1063/1.1787893.
  9. ^ Ho, H.-C., Gao, Z.-Y., Lin, H.-K., Chiu, P.-C., Hsin, Y.-M., Chyi, J.-I. (2012). "Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs". IEEE Electron Device Letters. 33 (7): 964–966. Bibcode:2012IEDL...33..964H. doi:10.1109/LED.2012.2193656. S2CID 6254124.
  10. ^ Loesch, R., Aidam, R., Kirste, L., Leuther, A. (2011). "Molecular beam epitaxial growth of metamorphic AlInSb/GaInSb high-electron-mobility-transistor structures on GaAs substrates for low power and high frequency applications". Journal of Applied Physics. 109 (3): 033706–033706–5. Bibcode:2011JAP...109c3706L. doi:10.1063/1.3544041.
  11. ^ Partin, D. L., Heremans, J. P., Schroeder, T., Thrush, C. M., Flores-Mena, L. A. (2006). "Temperature stable Hall effect sensors". IEEE Sensors Journal. 6 (1): 106–110. Bibcode:2006ISenJ...6..106P. doi:10.1109/JSEN.2005.860362. S2CID 40140622.

External links edit

  • Properties of GaInSb

January 01, 1970
gallium, indium, antimonide, also, known, indium, gallium, antimonide, gainsb, ingasb, gaxin1, ternary, semiconductor, compound, considered, alloy, between, gallium, antimonide, indium, antimonide, alloy, contain, ratio, between, gallium, indium, gainsb, refer. Gallium indium antimonide also known as indium gallium antimonide GaInSb or InGaSb GaxIn1 xSb is a ternary III V semiconductor compound It can be considered as an alloy between gallium antimonide and indium antimonide The alloy can contain any ratio between gallium and indium GaInSb refers generally to any composition of the alloy Contents 1 Preparation 2 Electronic Properties 3 Applications 4 References 5 External linksPreparation editGaInSb films have been grown by molecular beam epitaxy 1 chemical beam epitaxy 2 and liquid phase epitaxy 3 on gallium arsenide and gallium antimonide substrates It is often incorporated into layered heterostructures with other III V compounds Electronic Properties edit nbsp Dependence of the direct and indirect band gaps of GaInSb on composition at room temperature T 300 K 4 5 The bandgap and lattice constant of GaInSb alloys are between those of pure GaSb a 0 610 nm Eg 0 73 eV and InSb a 0 648 nm Eg 0 17 eV 4 Over all compositions the bandgap is direct like in pure GaSb and InSb Applications editInGaSb and InGaSb containing heterostructures have been studied for use in near to mid infrared photodetectors 6 7 8 transistors 9 10 and hall effect sensors 11 References edit Kodama M Kimata M 1985 Molecular beam epitaxy of GaSb and InGaSb Journal of Crystal Growth 73 3 641 645 Bibcode 1985JCrGr 73 641K doi 10 1016 0022 0248 85 90031 4 Kaneko T Asahi H Okuno Y Gonda S 1989 MOMBE Metalorganic Molecular Beam Epitaxy growth of InGaSb on GaSb Journal of Crystal Growth 95 1 158 162 Bibcode 1989JCrGr 95 158K doi 10 1016 0022 0248 89 90372 2 Mauk M G Tata A N Cox J A 2001 Solution growth of thick III V antimonide alloy epilayers InAsSb InGaSb InGaAsSb AlGaAsSb and InAsSbP for virtual substrates Journal of Crystal Growth 225 2 236 243 Bibcode 2001JCrGr 225 236M doi 10 1016 S0022 0248 01 00843 0 a b Vurgaftman I Meyer J R Ram Mohan L R 2001 Band parameters for III V compound semiconductors and their alloys Journal of Applied Physics 89 11 5815 5875 Bibcode 2001JAP 89 5815V doi 10 1063 1 1368156 Adachi S 1987 Band gaps and refractive indices of AlGaAsSb GaInAsSb and InPAsSb Key properties for a variety of the 2 4 mm optoelectronic device applications Journal of Applied Physics 61 10 4869 4876 doi 10 1063 1 338352 Rogalski A Martyniuk P 2006 InAs GaInSb superlattices as a promising material system for third generation infrared detectors Infrared Physics amp Technology 48 1 39 52 Bibcode 2006InPhT 48 39R doi 10 1016 j infrared 2005 01 003 Li D Lan C Manikandan A Yip S Zhou Z Liang X Shu L Chueh Y L Han N Ho J C 2019 Ultra fast photodetectors based on high mobility indium gallium antimonide nanowires Nature Communications 10 1 Nature Publishing Group 1664 Bibcode 2019NatCo 10 1664L doi 10 1038 s41467 019 09606 y PMC 6458123 PMID 30971702 Refaat T F Abedin M N Bhagwat V Bhat I B Dutta P S Singh U N 2004 InGaSb photodetectors using an InGaSb substrate for 2mm applications Applied Physics Letters 85 11 1874 1876 Bibcode 2004ApPhL 85 1874R doi 10 1063 1 1787893 Ho H C Gao Z Y Lin H K Chiu P C Hsin Y M Chyi J I 2012 Device Characteristics of InGaSb AlSb High Hole Mobility FETs IEEE Electron Device Letters 33 7 964 966 Bibcode 2012IEDL 33 964H doi 10 1109 LED 2012 2193656 S2CID 6254124 Loesch R Aidam R Kirste L Leuther A 2011 Molecular beam epitaxial growth of metamorphic AlInSb GaInSb high electron mobility transistor structures on GaAs substrates for low power and high frequency applications Journal of Applied Physics 109 3 033706 033706 5 Bibcode 2011JAP 109c3706L doi 10 1063 1 3544041 Partin D L Heremans J P Schroeder T Thrush C M Flores Mena L A 2006 Temperature stable Hall effect sensors IEEE Sensors Journal 6 1 106 110 Bibcode 2006ISenJ 6 106P doi 10 1109 JSEN 2005 860362 S2CID 40140622 External links editProperties of GaInSb Retrieved from https en wikipedia org w index php title Gallium indium antimonide amp oldid 1221843187, wikipedia, wiki, book, books, library,

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