A charge pump is a kind of DC-to-DC converter that uses capacitors for energetic charge storage to raise or lower voltage. Charge-pump circuits are capable of high efficiencies, sometimes as high as 90–95%, while being electrically simple circuits.
Two-stage charge pump with DC voltage supply and a pump control signal S0
Charge pumps use some form of switching device to control the connection of a supply voltage across a load through a capacitor. In a two stage cycle, in the first stage a capacitor is connected across the supply, charging it to that same voltage. In the second stage the circuit is reconfigured so that the capacitor is in series with the supply and the load. This doubles the voltage across the load - the sum of the original supply and the capacitor voltages. The pulsing nature of the higher voltage switched output is often smoothed by the use of an output capacitor.
An external or secondary circuit drives the switching, typically at tens of kilohertz up to several megahertz. The high frequency minimizes the amount of capacitance required, as less charge needs to be stored and dumped in a shorter cycle.
Charge pumps can double voltages, triple voltages, halve voltages, invert voltages, fractionally multiply or scale voltages (such as ×3/2, ×4/3, ×2/3, etc.) and generate arbitrary voltages by quickly alternating between modes, depending on the controller and circuit topology.
They are commonly used in low-power electronics (such as mobile phones) to raise and lower voltages for different parts of the circuitry - minimizing power consumption by controlling supply voltages carefully.
Terminology for PLL
The term charge pump is also commonly used in phase-locked loop (PLL) circuits even though there is no pumping action involved unlike in the circuit discussed above. A PLL charge pump is merely a bipolar switched current source. This means that it can output positive and negative current pulses into the loop filter of the PLL. It cannot produce higher or lower voltages than its power and ground supply levels.
Applications
A common application for charge-pump circuits is in RS-232level shifters, where they are used to derive positive and negative voltages (often +10 V and −10 V) from a single 5 V or 3 V power supply rail.
Charge pumps can also be used as LCD or white-LED drivers, generating high bias voltages from a single low-voltage supply, such as a battery.
Charge pumps are extensively used in NMOS memories and microprocessors to generate a negative voltage "VBB" (about −3 V), which is connected to the substrate. This guarantees that all N+-to-substrate junctions are reversely biased by 3 V or more, decreasing junction capacitance and increasing circuit speed.[1]
As of 2007, charge pumps are integrated into nearly all EEPROM and flash-memory integrated circuits. These devices require a high-voltage pulse to "clean out" any existing data in a particular memory cell before it can be written with a new value. Early EEPROM and flash-memory devices required two power supplies: +5 V (for reading) and +12 V (for erasing). As of 2007[update], commercially available flash memory and EEPROM memory requires only one external power supply – generally 1.8 V or 3.3 V. A higher voltage, used to erase cells, is generated internally by an on-chip charge pump.
Charge pumps are used in H bridges in high-side drivers for gate-driving high-side n-channel power MOSFETs and IGBTs. When the centre of a half bridge goes low, the capacitor is charged through a diode, and this charge is used to later drive the gate of the high-side FET a few volts above the source voltage so as to switch it on. This strategy works well, provided the bridge is regularly switched and avoids the complexity of having to run a separate power supply and permits the more efficient n-channel devices to be used for both switches. This circuit (requiring the periodic switching of the high-side FET) may also be called a "bootstrap" circuit, and some would differentiate between that and a charge pump (which would not require that switching).
Vertical deflection circuit in CRT monitors. With use of ic TDA1670A for example. To achieve maximum deviation, the CRT coil needs ~50v. The charge pump trick from the 24v supply line eliminates the need for another voltage.
Higher-power fast charge solutions for mobile devices rely on a charge pump instead of a buck converter to reduce the voltage, as higher efficiency reduces heat generation. The Samsung Galaxy S23, which takes an input current of 3A, can charge its internal battery packs at 6A thanks to a 2:1 current pump.[3] Oppo's 240W SUPERVOOC goes further and uses three charge pumps in parallel (98% claimed efficiency[4]) to go from 24V/10A to 10V/24A, which is then taken by two parallel battery packs.[5]
^Jenne, F. "Substrate Bias Circuit", US Patent 3794862A, Feb 26, 1974.
^Kevin Horton. Colordreams Revision C. Last modified 2007-09-30. Accessed 2011-09-15.
^Release, Press (25 July 2022). "Smartphones - 2:1 Charge Pump Direct Charger". Power Electronics News.
^"OPPO 超级闪充四大技术全面突破，布局多终端、多场景闪充生态 | OPPO 官方网站". OPPO (in Chinese (China)).
^K., Balakumar (1 March 2022). "Oppo claims new levels in fast charging through 240W SUPERVOOC - We explain it". TechRadar.
Applying the equivalent resistor concept to calculating the power losses in the charge pumps
Maxwell, J.C. (1873). "Intermittent current Art. 775, 776". A Treatise on Electricity and Magnetism. Oxford: The Clarendon Press. pp. 420–5.
Singer, Z.; Emanuel, A.; Erlicki, M. S. (February 1972). "Power regulation by means of a switched capacitor". Proceedings of the Institution of Electrical Engineers. 119 (2): 149–152. doi:10.1049/piee.1972.0027.
van Steenwijk, G.; Hoen, K.; Wallinga, H. (1993). "Analysis and design of a charge pump circuit for high output current applications". Proc. 19th European Solid-State Circuits Conference (ESSCIRC). Vol. 1. pp. 118–121.
Kimball, J.W.; Krein, P.T.; Cahill, K.R. (December 2005). "Modeling of capacitor impedance in switching converters". IEEE Power Electronics Letters. 3 (4): 136–140. doi:10.1109/LPEL.2005.863603. S2CID 27467492.
Kiyoo Itoh; Masashi Horiguchi; Hitoshi Tanaka (2007). Ultra-Low Voltage Nano-Scale Memories. Series on Integrated Circuits and Systems. Springer. ISBN978-0-387-68853-4.
Seeman, M.D.; Sanders, S.R. (March 2008). "Analysis and Optimization of Switched-Capacitor DC–DC Converters". IEEE Transactions on Power Electronics. 23 (2): 841–851. Bibcode:2008ITPE...23..841S. doi:10.1109/TPEL.2007.915182.
Ben-Yaakov, S.; Evzelman, M. (2009). "Generic and unified model of Switched Capacitor Converters". 2009 IEEE Energy Conversion Congress and Exposition, San Jose, CA. pp. 3501–8. doi:10.1109/ECCE.2009.5316060. ISBN978-1-4244-2893-9. S2CID 9116733.
Ben-Yaakov, S. (January 2012). "On the Influence of Switch Resistances on Switched-Capacitor Converter Losses". IEEE Transactions on Industrial Electronics. 59 (1): 638–640. doi:10.1109/TIE.2011.2146219. S2CID 18901243.
Charge pumps where the voltages across the capacitors follow the binary number system
Ueno, F.; Inoue, T.; Oota, I. (1986). "Realization of a new switched-capacitor transformer with a step-up transformer ratio 2n–1 using n capacitors". IEEE International Symposium on Circuits and Systems (ISCAS). pp. 805–8.
Starzyk, J.A.; Ying-Wei Jan; Fengjing Qiu (March 2001). "A DC-DC charge pump design based on voltage doublers". IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications. 48 (3): 350–9. doi:10.1109/81.915390.
Fang Lin Luo; Hong Ye (June 2004). "Positive output multiple-lift push-pull switched-capacitor Luo-converters". IEEE Transactions on Industrial Electronics. 51 (3): 594–602. doi:10.1109/TIE.2004.825344. S2CID 22202569.
Ben-Yaakov, S.; Kushnerov, A. (2009). "Algebraic foundation of self adjusting Switched Capacitors Converters". 2009 IEEE Energy Conversion Congress and Exposition, San Jose, CA. pp. 1582–9. doi:10.1109/ECCE.2009.5316143. ISBN978-1-4244-2893-9. S2CID 12915415.
Allasasmeh, Y.; Gregori, S. (November 2018). "High-performance switched-capacitor boost-buck integrated power converters". IEEE Transactions on Circuits and Systems I, Regular Papers. 65 (11): 3970–3983. doi:10.1109/TCSI.2018.2863239. ISSN 1558-0806. S2CID 52932169.
Charge Pump DC/DC Converters. Applications, circuits and solutions using inductorless (charge pump) dc/dc converters.
DC/DC Conversion without Inductors. General description of charge pump operation; example applications using Maxim controllers.
Charge pump circuits overview. Tutorial by G. Palumbo and D. Pappalardo
March 20, 2023
charge, pump, this, article, includes, list, general, references, lacks, sufficient, corresponding, inline, citations, please, help, improve, this, article, introducing, more, precise, citations, november, 2015, learn, when, remove, this, template, message, ch. This article includes a list of general references but it lacks sufficient corresponding inline citations Please help to improve this article by introducing more precise citations November 2015 Learn how and when to remove this template message A charge pump is a kind of DC to DC converter that uses capacitors for energetic charge storage to raise or lower voltage Charge pump circuits are capable of high efficiencies sometimes as high as 90 95 while being electrically simple circuits Two stage charge pump with DC voltage supply and a pump control signal S0 Dickson charge pump with diodes Dickson charge pump with MOSFETs PLL charge pump Contents 1 Description 2 Terminology for PLL 3 Applications 4 See also 5 References 6 External linksDescription EditCharge pumps use some form of switching device to control the connection of a supply voltage across a load through a capacitor In a two stage cycle in the first stage a capacitor is connected across the supply charging it to that same voltage In the second stage the circuit is reconfigured so that the capacitor is in series with the supply and the load This doubles the voltage across the load the sum of the original supply and the capacitor voltages The pulsing nature of the higher voltage switched output is often smoothed by the use of an output capacitor An external or secondary circuit drives the switching typically at tens of kilohertz up to several megahertz The high frequency minimizes the amount of capacitance required as less charge needs to be stored and dumped in a shorter cycle Charge pumps can double voltages triple voltages halve voltages invert voltages fractionally multiply or scale voltages such as 3 2 4 3 2 3 etc and generate arbitrary voltages by quickly alternating between modes depending on the controller and circuit topology They are commonly used in low power electronics such as mobile phones to raise and lower voltages for different parts of the circuitry minimizing power consumption by controlling supply voltages carefully Terminology for PLL EditThe term charge pump is also commonly used in phase locked loop PLL circuits even though there is no pumping action involved unlike in the circuit discussed above A PLL charge pump is merely a bipolar switched current source This means that it can output positive and negative current pulses into the loop filter of the PLL It cannot produce higher or lower voltages than its power and ground supply levels Applications EditA common application for charge pump circuits is in RS 232 level shifters where they are used to derive positive and negative voltages often 10 V and 10 V from a single 5 V or 3 V power supply rail Charge pumps can also be used as LCD or white LED drivers generating high bias voltages from a single low voltage supply such as a battery Charge pumps are extensively used in NMOS memories and microprocessors to generate a negative voltage VBB about 3 V which is connected to the substrate This guarantees that all N to substrate junctions are reversely biased by 3 V or more decreasing junction capacitance and increasing circuit speed 1 A charge pump providing a negative voltage spike has been used in NES compatible games not licensed by Nintendo in order to stun the Nintendo Entertainment System lockout chip 2 As of 2007 charge pumps are integrated into nearly all EEPROM and flash memory integrated circuits These devices require a high voltage pulse to clean out any existing data in a particular memory cell before it can be written with a new value Early EEPROM and flash memory devices required two power supplies 5 V for reading and 12 V for erasing As of 2007 update commercially available flash memory and EEPROM memory requires only one external power supply generally 1 8 V or 3 3 V A higher voltage used to erase cells is generated internally by an on chip charge pump Charge pumps are used in H bridges in high side drivers for gate driving high side n channel power MOSFETs and IGBTs When the centre of a half bridge goes low the capacitor is charged through a diode and this charge is used to later drive the gate of the high side FET a few volts above the source voltage so as to switch it on This strategy works well provided the bridge is regularly switched and avoids the complexity of having to run a separate power supply and permits the more efficient n channel devices to be used for both switches This circuit requiring the periodic switching of the high side FET may also be called a bootstrap circuit and some would differentiate between that and a charge pump which would not require that switching Vertical deflection circuit in CRT monitors With use of ic TDA1670A for example To achieve maximum deviation the CRT coil needs 50v The charge pump trick from the 24v supply line eliminates the need for another voltage Higher power fast charge solutions for mobile devices rely on a charge pump instead of a buck converter to reduce the voltage as higher efficiency reduces heat generation The Samsung Galaxy S23 which takes an input current of 3A can charge its internal battery packs at 6A thanks to a 2 1 current pump 3 Oppo s 240W SUPERVOOC goes further and uses three charge pumps in parallel 98 claimed efficiency 4 to go from 24V 10A to 10V 24A which is then taken by two parallel battery packs 5 See also EditCockcroft Walton generator Voltage multiplier Switched capacitor Charge transfer switch Voltage doublerReferences Edit Jenne F Substrate Bias Circuit US Patent 3794862A Feb 26 1974 Kevin Horton Colordreams Revision C Last modified 2007 09 30 Accessed 2011 09 15 Release Press 25 July 2022 Smartphones 2 1 Charge Pump Direct Charger Power Electronics News OPPO 超级闪充四大技术全面突破 布局多终端 多场景闪充生态 OPPO 官方网站 OPPO in Chinese China K Balakumar 1 March 2022 Oppo claims new levels in fast charging through 240W SUPERVOOC We explain it TechRadar Applying the equivalent resistor concept to calculating the power losses in the charge pumps Maxwell J C 1873 Intermittent current Art 775 776 A Treatise on Electricity and Magnetism Oxford The Clarendon Press pp 420 5 Singer Z Emanuel A Erlicki M S February 1972 Power regulation by means of a switched capacitor Proceedings of the Institution of Electrical Engineers 119 2 149 152 doi 10 1049 piee 1972 0027 van Steenwijk G Hoen K Wallinga H 1993 Analysis and design of a charge pump circuit for high output current applications Proc 19th European Solid State Circuits Conference ESSCIRC Vol 1 pp 118 121 Kimball J W Krein P T Cahill K R December 2005 Modeling of capacitor impedance in switching converters IEEE Power Electronics Letters 3 4 136 140 doi 10 1109 LPEL 2005 863603 S2CID 27467492 Kiyoo Itoh Masashi Horiguchi Hitoshi Tanaka 2007 Ultra Low Voltage Nano Scale Memories Series on Integrated Circuits and Systems Springer ISBN 978 0 387 68853 4 Seeman M D Sanders S R March 2008 Analysis and Optimization of Switched Capacitor DC DC Converters IEEE Transactions on Power Electronics 23 2 841 851 Bibcode 2008ITPE 23 841S doi 10 1109 TPEL 2007 915182 Ben Yaakov S Evzelman M 2009 Generic and unified model of Switched Capacitor Converters 2009 IEEE Energy Conversion Congress and Exposition San Jose CA pp 3501 8 doi 10 1109 ECCE 2009 5316060 ISBN 978 1 4244 2893 9 S2CID 9116733 Ben Yaakov S January 2012 On the Influence of Switch Resistances on Switched Capacitor Converter Losses IEEE Transactions on Industrial Electronics 59 1 638 640 doi 10 1109 TIE 2011 2146219 S2CID 18901243 Charge pumps where the voltages across the capacitors follow the binary number system Ueno F Inoue T Oota I 1986 Realization of a new switched capacitor transformer with a step up transformer ratio 2n 1 using n capacitors IEEE International Symposium on Circuits and Systems ISCAS pp 805 8 Starzyk J A Ying Wei Jan Fengjing Qiu March 2001 A DC DC charge pump design based on voltage doublers IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications 48 3 350 9 doi 10 1109 81 915390 Fang Lin Luo Hong Ye June 2004 Positive output multiple lift push pull switched capacitor Luo converters IEEE Transactions on Industrial Electronics 51 3 594 602 doi 10 1109 TIE 2004 825344 S2CID 22202569 Ben Yaakov S Kushnerov A 2009 Algebraic foundation of self adjusting Switched Capacitors Converters 2009 IEEE Energy Conversion Congress and Exposition San Jose CA pp 1582 9 doi 10 1109 ECCE 2009 5316143 ISBN 978 1 4244 2893 9 S2CID 12915415 Allasasmeh Y Gregori S November 2018 High performance switched capacitor boost buck integrated power converters IEEE Transactions on Circuits and Systems I Regular Papers 65 11 3970 3983 doi 10 1109 TCSI 2018 2863239 ISSN 1558 0806 S2CID 52932169 External links EditThis article s use of external links may not follow Wikipedia s policies or guidelines Please improve this article by removing excessive or inappropriate external links and converting useful links where appropriate into footnote references September 2018 Learn how and when to remove this template message Charge Pump inductorless Voltage Regulators On chip High Voltage Generator Design Charge Pump DC DC Converters Applications circuits and solutions using inductorless charge pump dc dc converters DC DC Conversion without Inductors General description of charge pump operation example applications using Maxim controllers Charge pump circuits overview Tutorial by G Palumbo and D Pappalardo Retrieved from https en wikipedia org w index php title Charge pump amp oldid 1130963088, wikipedia, wiki, book, books, library,
