Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between InAs and AlAs.
The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio.
Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in e.g. broadband quantum cascade lasers.
Safety and toxicity aspectsedit
The toxicology of AlInAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium indium arsenide sources (such as trimethylindium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.[1]
Referencesedit
^Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors; D V Shenai-Khatkhate, R Goyette, R L DiCarlo and G Dripps, Journal of Crystal Growth, vol. 1-4, pp. 816-821 (2004); doi:10.1016/j.jcrysgro.2004.09.007
December 15, 2023
aluminium, indium, arsenide, also, indium, aluminium, arsenide, alinas, alxin1, semiconductor, material, with, very, nearly, same, lattice, constant, gainas, larger, bandgap, formula, above, number, between, this, indicates, arbitrary, alloy, between, inas, al. Aluminium indium arsenide also indium aluminium arsenide or AlInAs AlxIn1 xAs is a semiconductor material with very nearly the same lattice constant as GaInAs but a larger bandgap The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between InAs and AlAs The formula AlInAs should be considered an abbreviated form of the above rather than any particular ratio Aluminium indium arsenide is used e g as a buffer layer in metamorphic HEMT transistors where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel It can be also used to form alternate layers with indium gallium arsenide which act as quantum wells these structures are used in e g broadband quantum cascade lasers Safety and toxicity aspects editThe toxicology of AlInAs has not been fully investigated The dust is an irritant to skin eyes and lungs The environment health and safety aspects of aluminium indium arsenide sources such as trimethylindium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review 1 References edit Environment health and safety issues for sources used in MOVPE growth of compound semiconductors D V Shenai Khatkhate R Goyette R L DiCarlo and G Dripps Journal of Crystal Growth vol 1 4 pp 816 821 2004 doi 10 1016 j jcrysgro 2004 09 007 Retrieved from https en wikipedia org w index php title Aluminium indium arsenide amp oldid 1027575853, wikipedia, wiki, book, books, library,
