Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.
The crystal structure of aluminium gallium arsenide is zincblende.
The chemical formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.
The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.
The refractive index is related with the bandgap via the Kramers–Kronig relations and varies between 2.9 (x = 1) and 3.5 (x = 0). This allows the construction of Bragg mirrors used in VCSELs, RCLEDs, and substrate-transferred crystalline coatings.
Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (QWIP).
It is commonly used in GaAs-based red- and near-infra-red-emitting (700–1100 nm) double-hetero-structure laser diodes.
Safety and toxicity aspectsedit
The toxicology of AlGaAs has not been fully investigated. The dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium arsenide sources (such as trimethylgallium and arsine) and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review.[1]
Referencesedit
^Shenai-Khatkhate, D. V.; Goyette, R. J.; DiCarlo, R. L. Jr.; Dripps, G. (2004). "Environment, Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors". Journal of Crystal Growth. 272 (1–4): 816–821. doi:10.1016/j.jcrysgro.2004.09.007.
External linksedit
"AlxGa1−xAs". Ioffe Database. Sankt-Peterburg: FTI im. A. F. Ioffe, RAN.
November 28, 2023
aluminium, gallium, arsenide, also, gallium, aluminium, arsenide, alxga1, semiconductor, material, with, very, nearly, same, lattice, constant, gaas, larger, bandgap, formula, above, number, between, this, indicates, arbitrary, alloy, between, gaas, alas, crys. Aluminium gallium arsenide also gallium aluminium arsenide AlxGa1 xAs is a semiconductor material with very nearly the same lattice constant as GaAs but a larger bandgap The x in the formula above is a number between 0 and 1 this indicates an arbitrary alloy between GaAs and AlAs The crystal structure of aluminium gallium arsenide is zincblende The chemical formula AlGaAs should be considered an abbreviated form of the above rather than any particular ratio The bandgap varies between 1 42 eV GaAs and 2 16 eV AlAs For x lt 0 4 the bandgap is direct The refractive index is related with the bandgap via the Kramers Kronig relations and varies between 2 9 x 1 and 3 5 x 0 This allows the construction of Bragg mirrors used in VCSELs RCLEDs and substrate transferred crystalline coatings Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices The AlGaAs layer confines the electrons to a gallium arsenide region An example of such a device is a quantum well infrared photodetector QWIP It is commonly used in GaAs based red and near infra red emitting 700 1100 nm double hetero structure laser diodes Safety and toxicity aspects editThe toxicology of AlGaAs has not been fully investigated The dust is an irritant to skin eyes and lungs The environment health and safety aspects of aluminium gallium arsenide sources such as trimethylgallium and arsine and industrial hygiene monitoring studies of standard MOVPE sources have been reported recently in a review 1 References edit Shenai Khatkhate D V Goyette R J DiCarlo R L Jr Dripps G 2004 Environment Health and Safety Issues for Sources Used in MOVPE Growth of Compound Semiconductors Journal of Crystal Growth 272 1 4 816 821 doi 10 1016 j jcrysgro 2004 09 007 External links edit AlxGa1 xAs Ioffe Database Sankt Peterburg FTI im A F Ioffe RAN Retrieved from https en wikipedia org w index php title Aluminium gallium arsenide amp oldid 1070254453, wikipedia, wiki, book, books, library,
