The 2N7000 and BS170 are two different N-channel, enhancement-modeMOSFETs used for low-power switching applications, with different lead arrangements and current ratings. They are sometimes listed together on the same datasheet with other variants 2N7002, VQ1000J, and VQ1000P.[1]
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged.The 2N7002 variant is packaged in a TO-236 surface-mount package.
The 2N7000 is a widely available and popular part, often recommended as useful and common components to have around for hobbyist use.[2] The BS250P is "a good p-channel analog of the 2N7000."[3]
Packaged in a TO-92 enclosure, both the 2N7000 and BS170 are 60 V devices. The 2N7000 can switch 200 mA. The BS170 can switch 500 mA, with a maximum on-resistance of 5 Ω at 10 V Vgs.
The 2N7002 is a part with similar (but not identical) electrical characteristics as the 2N7000 but different package. The 2N7002 is in a TO-236 package, also known as "small outline transistor" SOT-23 surface-mount, which is the most commonly used three-lead surface-mount package.[4]
Applicationsedit
The 2N7000 has been referred to as a "FETlington" and as an "absolutely ideal hacker part."[5] The word "FETlington" is a reference to the Darlington-transistor-like saturation characteristic.
A typical use of these transistors is as a switch for moderate voltages and currents, including as drivers for small lamps, motors, and relays.[1] In switching circuits, these FETs can be used much like bipolar junction transistors, but have some advantages:
high input impedance of the insulated gate means almost no gate current is required
consequently no current-limiting resistor is required in the gate input
MOSFETs, unlike PN junction devices (such as LEDs) can be paralleled because resistance increases with temperature, although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuit
The main disadvantages of these FETs over bipolar transistors in switching are the following:
susceptibility to cumulative damage from static discharge prior to installation
circuits with external gate exposure require a protection gate resistor or other static discharge protection
Non-zero ohmic response when driven to saturation, as compared to a constant junction voltage drop in a bipolar junction transistor
Referencesedit
^ ab "2N7000/2N7002, VQ1000J/P, BS170" (PDF). Vishay Siliconix datasheet. Retrieved 28 March 2011.
^ H. Ward Silver (2005). Two-way radios & scanners for dummies. p. 237. ISBN0-7645-9582-2.
^ Lucio Di Jasio; Tim Wilmshurst; Dogan Ibrahim (2007). PIC microcontrollers. Newnes. p. 520. ISBN978-0-7506-8615-0.
^ Ray P. Prasad (1997). Surface mount technology: principles and practice (2nd ed.). Springer. p. 112. ISBN0-412-12921-3.
Electric Field Sensor demonstrates extremely high gate impedance with a simple LED circuit
Driving a single MOSFET Detailed description of usage of a similar MOSFET
Datasheets
2N7000, 200mA, TO-92 case 27 September 2007 at the Wayback Machine, On Semiconductor
BS170, 500mA, TO-92 case 24 October 2020 at the Wayback Machine, On Semiconductor
, NXP Semiconductors
, NXP Semiconductors
April 15, 2024
2n7000, bs170, different, channel, enhancement, mode, mosfets, used, power, switching, applications, with, different, lead, arrangements, current, ratings, they, sometimes, listed, together, same, datasheet, with, other, variants, 2n7002, vq1000j, vq1000p, 2n7. The 2N7000 and BS170 are two different N channel enhancement mode MOSFETs used for low power switching applications with different lead arrangements and current ratings They are sometimes listed together on the same datasheet with other variants 2N7002 VQ1000J and VQ1000P 1 2N7000 2N7002TypeMOSFET TransistorWorking principle N channelPin configuration G Gate D Drain S Source The symbol doesn t always show the internal diode formed between the substrate and the source drain channel Electronic symbolThe 2N7000 is housed in a TO92 package with lead 1 connected as the source lead 2 as the gate and lead 3 as the drain The BS170 has the source and drain leads interchanged The 2N7002 variant is packaged in a TO 236 surface mount package The 2N7000 is a widely available and popular part often recommended as useful and common components to have around for hobbyist use 2 The BS250P is a good p channel analog of the 2N7000 3 Packaged in a TO 92 enclosure both the 2N7000 and BS170 are 60 V devices The 2N7000 can switch 200 mA The BS170 can switch 500 mA with a maximum on resistance of 5 W at 10 V Vgs The 2N7002 is a part with similar but not identical electrical characteristics as the 2N7000 but different package The 2N7002 is in a TO 236 package also known as small outline transistor SOT 23 surface mount which is the most commonly used three lead surface mount package 4 Applications editThe 2N7000 has been referred to as a FETlington and as an absolutely ideal hacker part 5 The word FETlington is a reference to the Darlington transistor like saturation characteristic A typical use of these transistors is as a switch for moderate voltages and currents including as drivers for small lamps motors and relays 1 In switching circuits these FETs can be used much like bipolar junction transistors but have some advantages high input impedance of the insulated gate means almost no gate current is required consequently no current limiting resistor is required in the gate input MOSFETs unlike PN junction devices such as LEDs can be paralleled because resistance increases with temperature although the quality of this load balance is largely dependent on the internal chemistry of each individual MOSFET in the circuitThe main disadvantages of these FETs over bipolar transistors in switching are the following susceptibility to cumulative damage from static discharge prior to installation circuits with external gate exposure require a protection gate resistor or other static discharge protection Non zero ohmic response when driven to saturation as compared to a constant junction voltage drop in a bipolar junction transistorReferences edit a b 2N7000 2N7002 VQ1000J P BS170 PDF Vishay Siliconix datasheet Retrieved 28 March 2011 H Ward Silver 2005 Two way radios amp scanners for dummies p 237 ISBN 0 7645 9582 2 Lucio Di Jasio Tim Wilmshurst Dogan Ibrahim 2007 PIC microcontrollers Newnes p 520 ISBN 978 0 7506 8615 0 Ray P Prasad 1997 Surface mount technology principles and practice 2nd ed Springer p 112 ISBN 0 412 12921 3 Lancaster Don February 1986 Hardware hacker Modern Electronics 3 2 Richard Ross 115 ISSN 0748 9889 External links editApplication Notes for Experimenters Electric Field Sensor demonstrates extremely high gate impedance with a simple LED circuit Driving a single MOSFET Detailed description of usage of a similar MOSFETDatasheets2N7000 200mA TO 92 case Archived 27 September 2007 at the Wayback Machine On Semiconductor BS170 500mA TO 92 case Archived 24 October 2020 at the Wayback Machine On Semiconductor 2N7002 300mA SOT 23 case NXP Semiconductors NX7002AK 300mA SOT 23 case NXP Semiconductors Retrieved from https en wikipedia org w index php title 2N7000 amp oldid 1172759016, wikipedia, wiki, book, books, library,
